Results 151 to 160 of about 67,140 (213)

FDTD-based design of high quality factor quantum dot photonic crystal nanolaser for next-generation nanotechnologies. [PDF]

Sci Rep
Farmani A, Omidniaee A.
europepmc   +1 more source

Incipient Plasticity of Si and GaAs: Review and Perspectives. [PDF]

Materials (Basel)
Chrobak D.
europepmc   +1 more source

Editorial: 3^rd international workshop on microdosimetry for particle therapy: Bridging physics and biology. [PDF]

Precis Radiat Oncol
Barna S, Conte V, Cordoni F, Missiaggia M, Guan F, Rozenfeld A, Santa Cruz G, Sato T, Schettino G, La Tessa C.   +9 more
europepmc   +1 more source

Clinical outcomes of surgical laser interventions and adjunctive photobiomodulation in osseous crown lengthening: A systematic review. [PDF]

Lasers Med Sci
Fereidouni K, Mosleh-Shirazi O, Nikdast P, Kiany F.   +3 more
europepmc   +1 more source

Epitaxial growth of gallium arsenide on a semi-insulating gallium arsenide substrate

, 2016
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Toxicity of Indium Arsenide, Gallium Arsenide, and Aluminium Gallium Arsenide

Toxicology and Applied Pharmacology, 2004
Gallium arsenide (GaAs), indium arsenide (InAs), and aluminium gallium arsenide (AlGaAs) are semiconductor applications. Although the increased use of these materials has raised concerns about occupational exposure to them, there is little information regarding the adverse health effects to workers arising from exposure to these particles.
Akiyo Tanaka
exaly   +3 more sources

Evaluation of the Carcinogenicity of Gallium Arsenide

Critical Reviews in Toxicology, 2013
Gallium arsenide (GaAs) is an important semiconductor material. In 2-year inhalation studies, GaAs increased the incidence of lung tumors in female rats, but not in male rats or male and female mice. Alveolar proteinosis followed by chronic active inflammation was the predominant non-neoplastic pulmonary findings.
Samuel M Cohen
exaly   +3 more sources

Gallium arsenide phosphide-gallium arsenide heterojunction photodetectors

1966 International Electron Devices Meeting, 1966
Conventional pn homojunction photodetectors when used as microwave modulation detectors suffer from a disadvantage inherent in its construction, namely, the need for a top layer either p- or n-type. To reduce the absorption of the incident light in this layer, the junction must be located close to the surface with consequent degradation due to surface ...
openaire   +1 more source

Gallium-arsenide diffused diodes

1959 International Electron Devices Meeting, 1959
Small-area mesa-type gallium-arsenide diffused diodes for use as variable reactances are described. These devices have been made by the diffusion of zinc into n-type material with net impurity density ranging from 2.0 \times 10^{16} atoms/cm3through 1 \times 10^{18} atoms/cm3.
J. Halpern, J. Lowen, R.H. Rediker
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NORMAL VIBRATIONS IN GALLIUM ARSENIDE

Solid State Communications, 1963
The triple axis crystal spectrometer at Chalk River has been used to observe coherent slow neutron scattering from a single crystal of pure gallium arsenide at 296°K. The frequencies of normal modes of vibration propagating in the [ ζ 00], [ ζζζ ], and [0 ζζ ] crystal directions have been determined with a precision of between 1 and 2·5 per cent.
G. Dolling, J.L.T. Waugh
openaire   +1 more source