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Design of a UWB Interference-Rejection LNA Based on a Q-Enhanced Notch Filter. [PDF]
Micromachines (Basel)Li J, Fan Y, Meng F.
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A Quasi-Lumped Element Tunable Bandpass Filter Based on GaAs Technology. [PDF]
Micromachines (Basel)Cheng X, You B.
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Laser-Based Photobiomodulation in Postoperative Tissue Healing in Oral and Maxillofacial Surgery: Systematic Review of RCTs. [PDF]
J Clin MedNiedzielska I +5 more
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The impact of quantum circuit architecture and hyperparameters on variational quantum algorithms exemplified in the electronic structure of the GaAs crystal. [PDF]
Sci RepMiháliková I, Krejčí M, Friák M.
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Toxicity of indium arsenide, gallium arsenide, and aluminium gallium arsenide
Toxicology and Applied Pharmacology, 2004Gallium arsenide (GaAs), indium arsenide (InAs), and aluminium gallium arsenide (AlGaAs) are semiconductor applications. Although the increased use of these materials has raised concerns about occupational exposure to them, there is little information regarding the adverse health effects to workers arising from exposure to these particles.
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Gallium arsenide phosphide-gallium arsenide heterojunction photodetectors
1966 International Electron Devices Meeting, 1966Conventional pn homojunction photodetectors when used as microwave modulation detectors suffer from a disadvantage inherent in its construction, namely, the need for a top layer either p- or n-type. To reduce the absorption of the incident light in this layer, the junction must be located close to the surface with consequent degradation due to surface ...
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Gallium-arsenide diffused diodes
1959 International Electron Devices Meeting, 1959Small-area mesa-type gallium-arsenide diffused diodes for use as variable reactances are described. These devices have been made by the diffusion of zinc into n-type material with net impurity density ranging from 2.0 \times 10^{16} atoms/cm3through 1 \times 10^{18} atoms/cm3.
J. Halpern, J. Lowen, R.H. Rediker
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1993
Publisher Summary This chapter discusses that among the III-V semiconductors, GaAs has been extensively studied with most of the effort to date focusing on the surface that can be prepared by cleavage. GaAs is of the zincblende structure that has fcc translational symmetry with a two atom basis; a Ga atom at (0, 0, 0) and an As atom at (1/4, 1/4, 1/4)
R.M. Feenstra, Joseph A. Stroscio
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Publisher Summary This chapter discusses that among the III-V semiconductors, GaAs has been extensively studied with most of the effort to date focusing on the surface that can be prepared by cleavage. GaAs is of the zincblende structure that has fcc translational symmetry with a two atom basis; a Ga atom at (0, 0, 0) and an As atom at (1/4, 1/4, 1/4)
R.M. Feenstra, Joseph A. Stroscio
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