Results 161 to 170 of about 67,140 (213)
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Infrared characterization of an epitaxial film of gallium arsenide on a gallium arsenide substrate
Thin Solid Films, 1977Abstract The infrared reflectance of a thin film of GaAs on a GaAs substrate was measured for several samples of the type n n + and n + n . The reflectance was analyzed to determine the carrier density and mobility of film and substrate and the thickness of the film.
E.D. Palik, R.T. Holm, J.W. Gibson
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Self‐Diffusion of Gallium in Gallium Arsenide
Journal of The Electrochemical Society, 1981The self‐diffusion of gallium in gallium arsenide has been studied over the temperature range 1100°–1025°C using radiotracer techniques. Gallium arsenide samples were diffused with 72Ga evaporated layers under known pressure of arsenic in sealed capsules. Following diffusion, layers were removed from the surface using anodic oxidation followed by oxide
Helen D. Palfrey +2 more
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Occupational medicine (Philadelphia, Pa.), 1987
The demand for high-speed devices for a variety of communications and military purposes has resulted in a growing interest in alternatives to silicon, with particular attention to compounds of groups 3 to 5 on the periodic table. Gallium arsenide has proved to be an ideal substrate material for some uses but is associated with unique health hazards.
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The demand for high-speed devices for a variety of communications and military purposes has resulted in a growing interest in alternatives to silicon, with particular attention to compounds of groups 3 to 5 on the periodic table. Gallium arsenide has proved to be an ideal substrate material for some uses but is associated with unique health hazards.
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1993
Publisher Summary This chapter discusses that among the III-V semiconductors, GaAs has been extensively studied with most of the effort to date focusing on the surface that can be prepared by cleavage. GaAs is of the zincblende structure that has fcc translational symmetry with a two atom basis; a Ga atom at (0, 0, 0) and an As atom at (1/4, 1/4, 1/4)
R.M. Feenstra, Joseph A. Stroscio
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Publisher Summary This chapter discusses that among the III-V semiconductors, GaAs has been extensively studied with most of the effort to date focusing on the surface that can be prepared by cleavage. GaAs is of the zincblende structure that has fcc translational symmetry with a two atom basis; a Ga atom at (0, 0, 0) and an As atom at (1/4, 1/4, 1/4)
R.M. Feenstra, Joseph A. Stroscio
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Gallium arsenide/aluminium gallium arsenide double heterostructure laser diodes
1999ABSTRACT GALLIUM ARSENIDE / ALUMINUM GALLIUM ARSENIDE DOUBLE HETEROSTRUCTURE LASER DIODES Gezer, Cem M.S., Department of Physics Supervisor: Prof. Dr. Ramazan Aydın January 1999, 63 pages GaAs/AlGaAs double heterostructure laser diodes consist of an active GaAs layer placed between two surrounding AlGaAs layers.
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1999
Regarding device applications, GaAs is currently one of the most versatile semiconductors in use [1-3]. From an aspect of the solid-state phySiCs, GaAs is extremely interesting as prototypal direct-band-gap semiconductor. A review of many phySiCal and semiconducting properties of GaAs has been given in Refs. [4–8].
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Regarding device applications, GaAs is currently one of the most versatile semiconductors in use [1-3]. From an aspect of the solid-state phySiCs, GaAs is extremely interesting as prototypal direct-band-gap semiconductor. A review of many phySiCal and semiconducting properties of GaAs has been given in Refs. [4–8].
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Wide-Bandgap Perovskite/Gallium Arsenide Tandem Solar Cells
Advanced Energy Materials, 2020Ji-Yong Park, Kangho Kim, Jaejin Lee
exaly
Gallium arsenide crystal body and gallium arsenide crystal substrate
2020FUKUNAGA HIROSHI +2 more
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