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Overview of the Current State of Gallium Arsenide-Based Solar Cells [PDF]
Materials, 2021 Nikola Papez +2 more
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NORMAL VIBRATIONS IN GALLIUM ARSENIDE
Solid State Communications, 1963The triple axis crystal spectrometer at Chalk River has been used to observe coherent slow neutron scattering from a single crystal of pure gallium arsenide at 296°K. The frequencies of normal modes of vibration propagating in the [ ζ 00], [ ζζζ ], and [0 ζζ ] crystal directions have been determined with a precision of between 1 and 2·5 per cent.
G. Dolling, J.L.T. Waugh
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Self‐Diffusion of Gallium in Gallium Arsenide
Journal of The Electrochemical Society, 1981The self‐diffusion of gallium in gallium arsenide has been studied over the temperature range 1100°–1025°C using radiotracer techniques. Gallium arsenide samples were diffused with 72Ga evaporated layers under known pressure of arsenic in sealed capsules. Following diffusion, layers were removed from the surface using anodic oxidation followed by oxide
Helen D. Palfrey +2 more
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Journal of Applied Physics, 1991
The evolution of the deep level transient spectroscopy spectrum associated with the EL2 defect in epitaxial as well as bulk GaAs materials when they are contaminated by oxygen has been examined in detail. The degree of contamination is evaluated by ion mass spectroscopy.
J. C. Bourgoin +3 more
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The evolution of the deep level transient spectroscopy spectrum associated with the EL2 defect in epitaxial as well as bulk GaAs materials when they are contaminated by oxygen has been examined in detail. The degree of contamination is evaluated by ion mass spectroscopy.
J. C. Bourgoin +3 more
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Occupational medicine (Philadelphia, Pa.), 1987
The demand for high-speed devices for a variety of communications and military purposes has resulted in a growing interest in alternatives to silicon, with particular attention to compounds of groups 3 to 5 on the periodic table. Gallium arsenide has proved to be an ideal substrate material for some uses but is associated with unique health hazards.
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The demand for high-speed devices for a variety of communications and military purposes has resulted in a growing interest in alternatives to silicon, with particular attention to compounds of groups 3 to 5 on the periodic table. Gallium arsenide has proved to be an ideal substrate material for some uses but is associated with unique health hazards.
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Technology of gallium arsenide
Solid-State Electronics, 1960Abstract The steps in the preparation of the compound semiconductor gallium arsenide are described, from the treatment of the component elements to the zone purification and production of single crystals of the compound. The efficiency of zone refining and the influence of some impurities on the electrical properties of the material are discussed ...
F.A. Cunnell, J.T. Edmond, W.R. Harding
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1993
Publisher Summary This chapter discusses that among the III-V semiconductors, GaAs has been extensively studied with most of the effort to date focusing on the surface that can be prepared by cleavage. GaAs is of the zincblende structure that has fcc translational symmetry with a two atom basis; a Ga atom at (0, 0, 0) and an As atom at (1/4, 1/4, 1/4)
R.M. Feenstra, Joseph A. Stroscio
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Publisher Summary This chapter discusses that among the III-V semiconductors, GaAs has been extensively studied with most of the effort to date focusing on the surface that can be prepared by cleavage. GaAs is of the zincblende structure that has fcc translational symmetry with a two atom basis; a Ga atom at (0, 0, 0) and an As atom at (1/4, 1/4, 1/4)
R.M. Feenstra, Joseph A. Stroscio
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