Results 171 to 180 of about 34,697 (226)
Some of the next articles are maybe not open access.
Physics in Technology, 1987
The use of GaAs as a semiconductor is still in its infancy. GaAs devices make possible many new applications and their impact will be far reaching.
openaire +1 more source
The use of GaAs as a semiconductor is still in its infancy. GaAs devices make possible many new applications and their impact will be far reaching.
openaire +1 more source
NORMAL VIBRATIONS IN GALLIUM ARSENIDE
Solid State Communications, 1963The triple axis crystal spectrometer at Chalk River has been used to observe coherent slow neutron scattering from a single crystal of pure gallium arsenide at 296°K. The frequencies of normal modes of vibration propagating in the [ ζ 00], [ ζζζ ], and [0 ζζ ] crystal directions have been determined with a precision of between 1 and 2·5 per cent.
G. Dolling, J.L.T. Waugh
openaire +1 more source
Occupational medicine (Philadelphia, Pa.), 1987
The demand for high-speed devices for a variety of communications and military purposes has resulted in a growing interest in alternatives to silicon, with particular attention to compounds of groups 3 to 5 on the periodic table. Gallium arsenide has proved to be an ideal substrate material for some uses but is associated with unique health hazards.
openaire +1 more source
The demand for high-speed devices for a variety of communications and military purposes has resulted in a growing interest in alternatives to silicon, with particular attention to compounds of groups 3 to 5 on the periodic table. Gallium arsenide has proved to be an ideal substrate material for some uses but is associated with unique health hazards.
openaire +1 more source
Physics Bulletin, 1970
With reference to the advertisement (Physics Bulletin February 1970 p xxi) informing Members that the Nelson Research Centre can offer device quality gallium arsenide, I wish to state that no further orders can be taken.
openaire +1 more source
With reference to the advertisement (Physics Bulletin February 1970 p xxi) informing Members that the Nelson Research Centre can offer device quality gallium arsenide, I wish to state that no further orders can be taken.
openaire +1 more source
Gallium-arsenide high temperature diodes
1959 International Electron Devices Meeting, 1959This paper presents solutions to some of the problems encountered in the fabrication of high-temperature junction diodes from gallium arsenide and indium phosphide. The physical problems peculiar to these compound semiconductors are reviewed, including diffusion techniques, surface characteristics, contacting techniques, and methods for mounting and ...
A.J. Wheeler, L.D. Armstrong
openaire +1 more source
Science, 2003
SURFACE SCIENCE The metal oxide semiconductor field-effect transistor (MOSFET) is made from silicon rather than GaAs, even though GaAs has a direct band gap and high carrier mobilities. The reason is that the insulating oxide layer that forms on the GaAs surface has a high density of states that “pin” the valence and conduction bands, rather than ...
openaire +1 more source
SURFACE SCIENCE The metal oxide semiconductor field-effect transistor (MOSFET) is made from silicon rather than GaAs, even though GaAs has a direct band gap and high carrier mobilities. The reason is that the insulating oxide layer that forms on the GaAs surface has a high density of states that “pin” the valence and conduction bands, rather than ...
openaire +1 more source
Aluminum Gallium Arsenide (AlxGa1-xAs)
1997Publisher Summary The aluminum gallium arsenide (AlxGa1-xAs) system is technologically one of the most important alloy systems, especially when combined with GaAs. It forms the basis of quantum-well, superlattice, and single-barrier device structures, which in turn have a significant effect on high-speed electro-optics.
O.J. GLEMBOCKI, KENICHI TAKARABE
openaire +1 more source
Gallium arsenide/aluminium gallium arsenide double heterostructure laser diodes
1999ABSTRACT GALLIUM ARSENIDE / ALUMINUM GALLIUM ARSENIDE DOUBLE HETEROSTRUCTURE LASER DIODES Gezer, Cem M.S., Department of Physics Supervisor: Prof. Dr. Ramazan Aydın January 1999, 63 pages GaAs/AlGaAs double heterostructure laser diodes consist of an active GaAs layer placed between two surrounding AlGaAs layers.
openaire +2 more sources
1999
Regarding device applications, GaAs is currently one of the most versatile semiconductors in use [1-3]. From an aspect of the solid-state phySiCs, GaAs is extremely interesting as prototypal direct-band-gap semiconductor. A review of many phySiCal and semiconducting properties of GaAs has been given in Refs. [4–8].
openaire +1 more source
Regarding device applications, GaAs is currently one of the most versatile semiconductors in use [1-3]. From an aspect of the solid-state phySiCs, GaAs is extremely interesting as prototypal direct-band-gap semiconductor. A review of many phySiCal and semiconducting properties of GaAs has been given in Refs. [4–8].
openaire +1 more source