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Gallium Arsenide Integrated Circuits
1994It has been seen in this chapter that the GaAs field effect transistor is playing an important role in the development of integrated circuits. Analogue microwave circuits fabricated on gallium arsenide have a performance which is unattainable using silicon.
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Wide‐Bandgap Perovskite/Gallium Arsenide Tandem Solar Cells
Advanced Energy Materials, 2020Zijia Li, Bonghyun Jo, 휘제 우
exaly
Hot electron transport in gallium arsenide/aluminum gallium arsenide heterostructures
1990A new mechanism to understand time—dependent features in the conduction of a two-dimensional electron gas (2 DEC) in high electric fields is proposed and discussed. The mechanism is based on the idea that not only the properties of the GaAs/AlGaAs heterostructure have to be included, but also the properties of the transition from the ohmic contact to ...
Hendriks, P. +4 more
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Study on the crack formation mechanism in nano-cutting of gallium arsenide
Applied Surface Science, 2021Min Lai, Feng-Zhou Fang
exaly