Results 181 to 190 of about 12,610 (226)
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MRS Proceedings, 1995
ABSTRACTAn overview of the development of a new dielectric material, cubic-GaS, from the synthesis of new organometallic compounds to the fabrication of a new class of gallium arsenide based transistor is presented as a representative example of the possibility that inorganic chemistry can directly effect the development of new semiconductor devices ...
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ABSTRACTAn overview of the development of a new dielectric material, cubic-GaS, from the synthesis of new organometallic compounds to the fabrication of a new class of gallium arsenide based transistor is presented as a representative example of the possibility that inorganic chemistry can directly effect the development of new semiconductor devices ...
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Science, 2003
SURFACE SCIENCE The metal oxide semiconductor field-effect transistor (MOSFET) is made from silicon rather than GaAs, even though GaAs has a direct band gap and high carrier mobilities. The reason is that the insulating oxide layer that forms on the GaAs surface has a high density of states that “pin” the valence and conduction bands, rather than ...
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SURFACE SCIENCE The metal oxide semiconductor field-effect transistor (MOSFET) is made from silicon rather than GaAs, even though GaAs has a direct band gap and high carrier mobilities. The reason is that the insulating oxide layer that forms on the GaAs surface has a high density of states that “pin” the valence and conduction bands, rather than ...
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1999
Regarding device applications, GaAs is currently one of the most versatile semiconductors in use [1-3]. From an aspect of the solid-state phySiCs, GaAs is extremely interesting as prototypal direct-band-gap semiconductor. A review of many phySiCal and semiconducting properties of GaAs has been given in Refs. [4–8].
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Regarding device applications, GaAs is currently one of the most versatile semiconductors in use [1-3]. From an aspect of the solid-state phySiCs, GaAs is extremely interesting as prototypal direct-band-gap semiconductor. A review of many phySiCal and semiconducting properties of GaAs has been given in Refs. [4–8].
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Physics Bulletin, 1970
With reference to the advertisement (Physics Bulletin February 1970 p xxi) informing Members that the Nelson Research Centre can offer device quality gallium arsenide, I wish to state that no further orders can be taken.
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With reference to the advertisement (Physics Bulletin February 1970 p xxi) informing Members that the Nelson Research Centre can offer device quality gallium arsenide, I wish to state that no further orders can be taken.
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Gallium arsenide/aluminium gallium arsenide double heterostructure laser diodes
1999ABSTRACT GALLIUM ARSENIDE / ALUMINUM GALLIUM ARSENIDE DOUBLE HETEROSTRUCTURE LASER DIODES Gezer, Cem M.S., Department of Physics Supervisor: Prof. Dr. Ramazan Aydın January 1999, 63 pages GaAs/AlGaAs double heterostructure laser diodes consist of an active GaAs layer placed between two surrounding AlGaAs layers.
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Wide‐Bandgap Perovskite/Gallium Arsenide Tandem Solar Cells
Advanced Energy Materials, 2020Zijia Li, Seonghwa Jeong, Bonghyun Jo
exaly
Hot electron transport in gallium arsenide/aluminum gallium arsenide heterostructures
1990A new mechanism to understand time—dependent features in the conduction of a two-dimensional electron gas (2 DEC) in high electric fields is proposed and discussed. The mechanism is based on the idea that not only the properties of the GaAs/AlGaAs heterostructure have to be included, but also the properties of the transition from the ohmic contact to ...
Hendriks, P. +4 more
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Gallium arsenide p-i-n radial structures for photovoltaic applications
Applied Physics Letters, 2009Michael Grätzel +2 more
exaly