Results 141 to 150 of about 4,377 (195)
Some of the next articles are maybe not open access.
NORMAL VIBRATIONS IN GALLIUM ARSENIDE
Solid State Communications, 1963The triple axis crystal spectrometer at Chalk River has been used to observe coherent slow neutron scattering from a single crystal of pure gallium arsenide at 296°K. The frequencies of normal modes of vibration propagating in the [ ζ 00], [ ζζζ ], and [0 ζζ ] crystal directions have been determined with a precision of between 1 and 2·5 per cent.
G. Dolling, J.L.T. Waugh
openaire +1 more source
Infrared characterization of an epitaxial film of gallium arsenide on a gallium arsenide substrate
Thin Solid Films, 1977Abstract The infrared reflectance of a thin film of GaAs on a GaAs substrate was measured for several samples of the type n n + and n + n . The reflectance was analyzed to determine the carrier density and mobility of film and substrate and the thickness of the film.
E.D. Palik, R.T. Holm, J.W. Gibson
openaire +1 more source
Self‐Diffusion of Gallium in Gallium Arsenide
Journal of The Electrochemical Society, 1981The self‐diffusion of gallium in gallium arsenide has been studied over the temperature range 1100°–1025°C using radiotracer techniques. Gallium arsenide samples were diffused with 72Ga evaporated layers under known pressure of arsenic in sealed capsules. Following diffusion, layers were removed from the surface using anodic oxidation followed by oxide
Helen D. Palfrey +2 more
openaire +1 more source
Occupational medicine (Philadelphia, Pa.), 1987
The demand for high-speed devices for a variety of communications and military purposes has resulted in a growing interest in alternatives to silicon, with particular attention to compounds of groups 3 to 5 on the periodic table. Gallium arsenide has proved to be an ideal substrate material for some uses but is associated with unique health hazards.
openaire +1 more source
The demand for high-speed devices for a variety of communications and military purposes has resulted in a growing interest in alternatives to silicon, with particular attention to compounds of groups 3 to 5 on the periodic table. Gallium arsenide has proved to be an ideal substrate material for some uses but is associated with unique health hazards.
openaire +1 more source
1993
Publisher Summary This chapter discusses that among the III-V semiconductors, GaAs has been extensively studied with most of the effort to date focusing on the surface that can be prepared by cleavage. GaAs is of the zincblende structure that has fcc translational symmetry with a two atom basis; a Ga atom at (0, 0, 0) and an As atom at (1/4, 1/4, 1/4)
R.M. Feenstra, Joseph A. Stroscio
openaire +1 more source
Publisher Summary This chapter discusses that among the III-V semiconductors, GaAs has been extensively studied with most of the effort to date focusing on the surface that can be prepared by cleavage. GaAs is of the zincblende structure that has fcc translational symmetry with a two atom basis; a Ga atom at (0, 0, 0) and an As atom at (1/4, 1/4, 1/4)
R.M. Feenstra, Joseph A. Stroscio
openaire +1 more source
Gallium arsenide/aluminium gallium arsenide double heterostructure laser diodes
1999ABSTRACT GALLIUM ARSENIDE / ALUMINUM GALLIUM ARSENIDE DOUBLE HETEROSTRUCTURE LASER DIODES Gezer, Cem M.S., Department of Physics Supervisor: Prof. Dr. Ramazan Aydın January 1999, 63 pages GaAs/AlGaAs double heterostructure laser diodes consist of an active GaAs layer placed between two surrounding AlGaAs layers.
openaire +2 more sources
1999
Regarding device applications, GaAs is currently one of the most versatile semiconductors in use [1-3]. From an aspect of the solid-state phySiCs, GaAs is extremely interesting as prototypal direct-band-gap semiconductor. A review of many phySiCal and semiconducting properties of GaAs has been given in Refs. [4–8].
openaire +1 more source
Regarding device applications, GaAs is currently one of the most versatile semiconductors in use [1-3]. From an aspect of the solid-state phySiCs, GaAs is extremely interesting as prototypal direct-band-gap semiconductor. A review of many phySiCal and semiconducting properties of GaAs has been given in Refs. [4–8].
openaire +1 more source
Hot electron transport in gallium arsenide/aluminum gallium arsenide heterostructures
1990A new mechanism to understand time—dependent features in the conduction of a two-dimensional electron gas (2 DEC) in high electric fields is proposed and discussed. The mechanism is based on the idea that not only the properties of the GaAs/AlGaAs heterostructure have to be included, but also the properties of the transition from the ohmic contact to ...
Hendriks, P. +4 more
openaire +1 more source