Results 121 to 130 of about 67,140 (213)

Photoelectric effect accelerated electrochemical corrosion and nanoimprint processes on gallium arsenide wafers. [PDF]

Chem Sci, 2019
Guo C, Zhang L, Sartin MM, Han L, Tian ZW, Tian ZQ, Zhan D.   +6 more
europepmc   +1 more source

Synthesis of Polytypic Gallium Phosphide and Gallium Arsenide Nanowires and Their Application as Photodetectors. [PDF]

ACS Omega, 2019
Park K, Lee J, Kim D, Seo J, Kim J, Ahn JP, Park J.   +6 more
europepmc   +1 more source

Spin Properties of Electrons in the Semiconductor Gallium Arsenide (GaAs)

, 2013
The proposed project was to study spin properties of electrons in the semiconductor gallium arsenide (GaAs).
Colton, Dr. John
core  

Investigation of Gallium Arsenide Deformation Anisotropy during Nanopolishing via Molecular Dynamics Simulation. [PDF]

Micromachines (Basel)
Zhao B, Gao X, Pan J, Liu H, Zhao P.
europepmc   +1 more source

Nonlinear optical response of strain-mediated gallium arsenide microwire in the near-infrared region. [PDF]

Nanophotonics
Cui X, Huo W, Qiu L, Zhao L, Wang J, Lou F, Zhang S, Khayrudinov V, Tam WY, Lipsanen H, Yang H, Wang X.   +11 more
europepmc   +1 more source

Publisher Correction: Gallium arsenide solar cells grown at rates exceeding 300 µm h^-1 by hydride vapor phase epitaxy. [PDF]

Nat Commun, 2019
Metaferia W, Schulte KL, Simon J, Johnston S, Ptak AJ.   +4 more
europepmc   +1 more source

Signatures of transient Wannier-Stark localization in bulk gallium arsenide. [PDF]

Nat Commun, 2018
Schmidt C, Bühler J, Heinrich AC, Allerbeck J, Podzimski R, Berghoff D, Meier T, Schmidt WG, Reichl C, Wegscheider W, Brida D, Leitenstorfer A.   +11 more
europepmc   +1 more source

Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide. [PDF]

Nat Commun, 2018
Nemšák S, Gehlmann M, Kuo CT, Lin SC, Schlueter C, Mlynczak E, Lee TL, Plucinski L, Ebert H, Di Marco I, Minár J, Schneider CM, Fadley CS.   +12 more
europepmc   +1 more source

Effects of topically administered 0.6% hyaluronic acid on the healing of labial frenectomy in conventional and 940-nm indium gallium arsenide phosphide (InGaAsP) diode laser techniques in pediatric patients: a randomized, placebo-controlled clinical study. [PDF]

Lasers Med Sci
Doğan SSA, Karakan NC, Doğan Ö.
europepmc   +1 more source

Optimal power settings of aluminum gallium arsenide lasers in caries inhibition - An in vitro study. [PDF]

J Conserv Dent, 2016
Sharma S, Hegde MN, Sadananda V, Mathews B.   +3 more
europepmc   +1 more source