Development and modeling of a solid‐state microdosimeter for proton therapy applications
Precision Radiation Oncology, EarlyView.
Dante Guido Mercado +7 more
wiley +1 more source
Design and Analysis of Gallium Arsenide-Based Nanowire Using Coupled Non-Equilibrium Green Function for RF Hybrid Applications. [PDF]
Nanomaterials (Basel), 2023 Paramasivam P +2 more
europepmc +1 more source
, 2001 Semi-insulating gallium arsenide single crystal grown in space has been used in fabricating low noise field effect transistors and analog switch integrated circuits by the direct ion-implantation technique.
Chen NF +7 more
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Evaporator for thermal deposition of materials in vacuum
Технологія та конструювання в електронній апаратурі, 2008 The design of an evaporator intended for material deposition in vacuum-coating systems is considered, which has been successfully employed in the technological process of fabricating gallium arsenide transistors, diodes, and monolithic circuits.
V. I. Bosyi +2 more
doaj
Theoretical comparison and optimization of cadmium telluride and gallium arsenide photon-counting detectors for contrast-enhanced spectral mammography. [PDF]
J Med Imaging (Bellingham), 2023 Schaeffer C +3 more
europepmc +1 more source
ELECTRON PROCESSES ON GALLIUM ARSENIDE SURFACE TREATED IN CHALCOGENE VAPOURS
, 1995 The work covers the monocrystalline bases of gallium arsenide and heterostructures Me - gallium arsenide. The aim is to make the heterostructures Me - gallium arsenide with low density of the surface electron states (SES) and to create the model for ...
Kotov, Gennady Ivanovich
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“The Thermal Wave” in Technology of Crystal Growth from the Melt [PDF]
Журнал нано- та електронної фізики, 2013 It was found that the temperature fluctuations at the interface crystal-melt are the main reason for the formation of single crystals inhomogeneity grown by the Czochralski method.
V.G. Kosushkin +4 more
doaj
Role of Interdiffusion and Segregation during the Life of Indium Gallium Arsenide Quantum Dots, from Cradle to Grave. [PDF]
Nanomaterials (Basel), 2022 Walther T.
europepmc +1 more source
Ion implantation damage in gallium arsenide crystals.
, 2018 Crystal damage produced by ion implantation in (110) cut gallium arsenide single crystals has been investigated using X-ray diffraction, reflection high energy electron diffraction (RHEED) and electron microscopy.
Tunkasiri, Tawee.
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PPL 1.2mu gallium arsenide cell set [PDF]
, 1993 journal articleThe purpose of this note is to describe the 1.2/i gallium arsenide PPL cell set - not only what is included, but design decisions made along the way. The first section is an overview of the Umitations imposed by the use of gallium arsenide
Michell, Nick
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