Results 91 to 100 of about 67,140 (213)

Design and Analysis of Gallium Arsenide-Based Nanowire Using Coupled Non-Equilibrium Green Function for RF Hybrid Applications. [PDF]

Nanomaterials (Basel), 2023
Paramasivam P, Gowthaman N, Srivastava VM.   +2 more
europepmc   +1 more source

Development of gallium arsenide solar cells [PDF]

, 1973
The potential of ion implantation as a means of developing gallium arsenide solar cells with high efficiency performance was investigated. Computer calculations on gallium arsenide cell characteristics are presented to show the effects of surface ...

core  

“The Thermal Wave” in Technology of Crystal Growth from the Melt [PDF]

Журнал нано- та електронної фізики, 2013
It was found that the temperature fluctuations at the interface crystal-melt are the main reason for the formation of single crystals inhomogeneity grown by the Czochralski method.
V.G. Kosushkin, S.L. Kozhitov, Yn.N. Parkhomenko, L.V. Kozhitov, L.M. Cherjakov   +4 more
doaj  

Theoretical comparison and optimization of cadmium telluride and gallium arsenide photon-counting detectors for contrast-enhanced spectral mammography. [PDF]

J Med Imaging (Bellingham), 2023
Schaeffer C, Ghammraoui B, Taguchi K, Glick SJ.   +3 more
europepmc   +1 more source

ELECTRON PROCESSES ON GALLIUM ARSENIDE SURFACE TREATED IN CHALCOGENE VAPOURS

, 1995
The work covers the monocrystalline bases of gallium arsenide and heterostructures Me - gallium arsenide. The aim is to make the heterostructures Me - gallium arsenide with low density of the surface electron states (SES) and to create the model for ...
Kotov, Gennady Ivanovich
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Ion implantation damage in gallium arsenide crystals. [PDF]

, 2018
Crystal damage produced by ion implantation in (110) cut gallium arsenide single crystals has been investigated using X-ray diffraction, reflection high energy electron diffraction (RHEED) and electron microscopy.
Tunkasiri, Tawee.
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Peculiarities of Forming of Microwave Arsenide-Gallium Submicron Structures of Large-scale Integrated Circuit

Фізика і хімія твердого тіла, 2018
The peculiarities of technological processes of formation of submicron Schottky field transistors usingarsenide-gallium technology, i.e. the technology of Schottky field transistors formation with a self-alifned gate onthe basis of nitride or silicide of
N. T. Humeniuk, S. P. Novosiadlyi, V. І. Mandzyuk, І. Z. Huk   +3 more
doaj   +1 more source

Role of Interdiffusion and Segregation during the Life of Indium Gallium Arsenide Quantum Dots, from Cradle to Grave. [PDF]

Nanomaterials (Basel), 2022
Walther T.
europepmc   +1 more source

Comparison of field effect transistor characteristics between space-grown and earth-grown gallium arsenide single crystal substrates

, 2001
Semi-insulating gallium arsenide single crystal grown in space has been used in fabricating low noise field effect transistors and analog switch integrated circuits by the direct ion-implantation technique.
Chen NF, Chen NF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China., Bai XW, Lin LY, Wang YS, Zhong XR, Zhang M, Zhao J   +7 more
core  

Effects of manganese concentration and temperature on the ferromagnetism of manganese‐doped gallium arsenide semiconductor

Nano Select
The main objective of the review was to investigate the ferromagnetism of diluted magnetic semiconductors made of Mn‐doped GaAs. Manganese‐doped gallium arsenide has recently become an important field of research because of its potential applications in ...
Birhanu Abera, Bawoke Mekuye
doaj   +1 more source