Results 281 to 290 of about 203,124 (321)
Optimizing the crystallinity of ZrO<sub>2</sub> gate insulator in indium gallium zinc oxide thin-film transistors through atomic layer deposition process temperature control. [PDF]
Sci RepJeong H +4 more
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κ‑Ga<sub>2</sub>O<sub>3</sub>/(B)GaAs/GaAs Heterostructures: Study of Optically Active Defects, Design, and Modeling of Solar Cells Based on These Heterostructures. [PDF]
ACS OmegaHidouri T +5 more
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Photomodulated reflectance spectroscopy on gallium arsenide and gallium indium arsenide
, 2003 Zahir Karim Khawaja
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Effects of gallium arsenate (Ga-As) diodo laser on experimentalostheoarthritis in rabbits
, 2003 Danielle Andreazzi Lobato
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Annals of Pharmacotherapy, 1992
OBJECTIVE: To evaluate the therapeutic role of gallium nitrate in the treatment of hypercalcemia associated with malignancy and related disease states. DATA SOURCES: A literature search of English-language studies involving gallium nitrate for the period 1966–1991 using MEDLINE and the bibliographies of relevant articles.
T E, Hughes, L A, Hansen
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OBJECTIVE: To evaluate the therapeutic role of gallium nitrate in the treatment of hypercalcemia associated with malignancy and related disease states. DATA SOURCES: A literature search of English-language studies involving gallium nitrate for the period 1966–1991 using MEDLINE and the bibliographies of relevant articles.
T E, Hughes, L A, Hansen
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Angewandte Chemie International Edition, 2019
AbstractDespite the eminent importance of metal alkylidene species for organic synthesis and industrial catalytic processes, molecular homoleptic metal methylene compounds [M(CH2)n] as the simplest representatives, have remained elusive. Reports on this topic date back to 1955 when polymeric [Li2(CH2)]n and [Mg(CH2)]n were accessed by pyrolysis of ...
Martin Bonath +3 more
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AbstractDespite the eminent importance of metal alkylidene species for organic synthesis and industrial catalytic processes, molecular homoleptic metal methylene compounds [M(CH2)n] as the simplest representatives, have remained elusive. Reports on this topic date back to 1955 when polymeric [Li2(CH2)]n and [Mg(CH2)]n were accessed by pyrolysis of ...
Martin Bonath +3 more
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Hydrogen evolution on gallium, indium-gallium and mercury-gallium electrodes
Transactions of the Faraday Society, 1966Measurements of hydrogen overvoltage η have been made using dropping electrodes of gallium; 19.2 mole % In—Ga; and 0.122, 0.36, 1.64, and 99.65 mole % Hg—Ga in 0.100 M HClO4 at temperatures between 30° and 60°C. η increases by 150 mV when 19.2 % In is added to Ga, and by 280 mV when 1.64 % Hg is added to Ga.
James N. Butler, Mary L. Meehan
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Gallium(III) Trifluoromethanesulfonate (Gallium Triflate)
2009[74974-60-0] C3F9GaO9S3 (MW 516.91) InChI = 1S/3CHF3O3S.Ga/c3*2-1(3,4)8(5,6)7;/h3*(H,5,6,7);/q;;;+3/p-3 InChIKey = BVLXNPRUOXPBII-UHFFFAOYSA-K (a Lewis acid catalyst) Physical Data: dec. at 280 °C. Solubility: soluble in water, alcohol, acetonitrile, dimethylformamide, and most highly polar organic solvents.
G. K. Surya Prakash, Thomas Mathew
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1990
Abstract Gallium-base components can be found in a variety of products ranging from compact disk players to advanced military electronic warfare systems, owing to the factor that it can emit light, has a greater resistance to radiation and operates at faster speeds and higher temperatures.
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Abstract Gallium-base components can be found in a variety of products ranging from compact disk players to advanced military electronic warfare systems, owing to the factor that it can emit light, has a greater resistance to radiation and operates at faster speeds and higher temperatures.
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