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Epitaxial growth of gallium arsenide on a semi-insulating gallium arsenide substrate
, 1970 openaire +1 more source
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Evaluation of the carcinogenicity of gallium arsenide
Critical Reviews in Toxicology, 2013Gallium arsenide (GaAs) is an important semiconductor material. In 2-year inhalation studies, GaAs increased the incidence of lung tumors in female rats, but not in male rats or male and female mice. Alveolar proteinosis followed by chronic active inflammation was the predominant non-neoplastic pulmonary findings.
Hermann Schenk +4 more
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Advanced Materials & Technologies, 2022
Triboelectric nanogenerators (TENGs) based on metal and semiconductors have attracted great interest due to their direct‐current (DC) output characteristics and better integration with an integrated circuit. In order to increase the DC output performance,
Meiqi Wang +5 more
semanticscholar +1 more source
Triboelectric nanogenerators (TENGs) based on metal and semiconductors have attracted great interest due to their direct‐current (DC) output characteristics and better integration with an integrated circuit. In order to increase the DC output performance,
Meiqi Wang +5 more
semanticscholar +1 more source
Microbial toxicity of gallium- and indium-based oxide and arsenide nanoparticles
Journal of Environmental Science and Health. Part A: Toxic/Hazardous Substances and Environmental Engineering, 2020III-V semiconductor materials such as gallium arsenide (GaAs) and indium arsenide (InAs) are increasingly used in the fabrication of electronic devices.
Chi H. Nguyen +2 more
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MRS Proceedings, 1991
ABSTRACTThe influence of oxygen-related defects on the compensation behavior of semi-insulating gallium arsenide has been studied. Off-center substitutional oxygen (Ga-O-Ga center) forms an electrically active defect with two levels in the fundamental gap.
Dominique Deresmes +3 more
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ABSTRACTThe influence of oxygen-related defects on the compensation behavior of semi-insulating gallium arsenide has been studied. Off-center substitutional oxygen (Ga-O-Ga center) forms an electrically active defect with two levels in the fundamental gap.
Dominique Deresmes +3 more
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Gallium arsenide phosphide-gallium arsenide heterojunction photodetectors [PDF]
1966 International Electron Devices Meeting, 1966 Conventional pn homojunction photodetectors when used as microwave modulation detectors suffer from a disadvantage inherent in its construction, namely, the need for a top layer either p- or n-type. To reduce the absorption of the incident light in this layer, the junction must be located close to the surface with consequent degradation due to surface ...
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Wide‐Bandgap Perovskite/Gallium Arsenide Tandem Solar Cells
Advanced Energy Materials, 2019Gallium arsenide (GaAs) photovoltaic (PV) cells have been widely investigated due to their merits such as thin‐film feasibility, flexibility, and high efficiency.
Zijia Li +15 more
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Gallium arsenide devices [PDF]
Physics Bulletin, 1970 With reference to the advertisement (Physics Bulletin February 1970 p xxi) informing Members that the Nelson Research Centre can offer device quality gallium arsenide, I wish to state that no further orders can be taken.
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