Results 201 to 210 of about 100,205 (262)
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Gallium arsenide phosphide-gallium arsenide heterojunction photodetectors
1966 International Electron Devices Meeting, 1966Conventional pn homojunction photodetectors when used as microwave modulation detectors suffer from a disadvantage inherent in its construction, namely, the need for a top layer either p- or n-type. To reduce the absorption of the incident light in this layer, the junction must be located close to the surface with consequent degradation due to surface ...
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Gallium-arsenide diffused diodes
1959 International Electron Devices Meeting, 1959Small-area mesa-type gallium-arsenide diffused diodes for use as variable reactances are described. These devices have been made by the diffusion of zinc into n-type material with net impurity density ranging from 2.0 \times 10^{16} atoms/cm3through 1 \times 10^{18} atoms/cm3.
J. Halpern, J. Lowen, R.H. Rediker
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1993
Publisher Summary This chapter discusses that among the III-V semiconductors, GaAs has been extensively studied with most of the effort to date focusing on the surface that can be prepared by cleavage. GaAs is of the zincblende structure that has fcc translational symmetry with a two atom basis; a Ga atom at (0, 0, 0) and an As atom at (1/4, 1/4, 1/4)
R.M. Feenstra, Joseph A. Stroscio
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Publisher Summary This chapter discusses that among the III-V semiconductors, GaAs has been extensively studied with most of the effort to date focusing on the surface that can be prepared by cleavage. GaAs is of the zincblende structure that has fcc translational symmetry with a two atom basis; a Ga atom at (0, 0, 0) and an As atom at (1/4, 1/4, 1/4)
R.M. Feenstra, Joseph A. Stroscio
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Integration of boron arsenide cooling substrates into gallium nitride devices
Nature Electronics, 2021J. Kang +5 more
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Gallium Arsenide Photonic Integrated Circuit Platform for Tunable Laser Applications
IEEE Journal of Selected Topics in Quantum Electronics, 2021Paul A. Verrinder +9 more
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Physics in Technology, 1987
The use of GaAs as a semiconductor is still in its infancy. GaAs devices make possible many new applications and their impact will be far reaching.
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The use of GaAs as a semiconductor is still in its infancy. GaAs devices make possible many new applications and their impact will be far reaching.
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NORMAL VIBRATIONS IN GALLIUM ARSENIDE
Solid State Communications, 1963The triple axis crystal spectrometer at Chalk River has been used to observe coherent slow neutron scattering from a single crystal of pure gallium arsenide at 296°K. The frequencies of normal modes of vibration propagating in the [ ζ 00], [ ζζζ ], and [0 ζζ ] crystal directions have been determined with a precision of between 1 and 2·5 per cent.
G. Dolling, J.L.T. Waugh
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Occupational medicine (Philadelphia, Pa.), 1987
The demand for high-speed devices for a variety of communications and military purposes has resulted in a growing interest in alternatives to silicon, with particular attention to compounds of groups 3 to 5 on the periodic table. Gallium arsenide has proved to be an ideal substrate material for some uses but is associated with unique health hazards.
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The demand for high-speed devices for a variety of communications and military purposes has resulted in a growing interest in alternatives to silicon, with particular attention to compounds of groups 3 to 5 on the periodic table. Gallium arsenide has proved to be an ideal substrate material for some uses but is associated with unique health hazards.
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Physics Bulletin, 1970
With reference to the advertisement (Physics Bulletin February 1970 p xxi) informing Members that the Nelson Research Centre can offer device quality gallium arsenide, I wish to state that no further orders can be taken.
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With reference to the advertisement (Physics Bulletin February 1970 p xxi) informing Members that the Nelson Research Centre can offer device quality gallium arsenide, I wish to state that no further orders can be taken.
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Gallium-arsenide high temperature diodes
1959 International Electron Devices Meeting, 1959This paper presents solutions to some of the problems encountered in the fabrication of high-temperature junction diodes from gallium arsenide and indium phosphide. The physical problems peculiar to these compound semiconductors are reviewed, including diffusion techniques, surface characteristics, contacting techniques, and methods for mounting and ...
A.J. Wheeler, L.D. Armstrong
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