Results 91 to 100 of about 314,945 (334)
Compositionally Graded Indium Gallium Nitride Solar Cells [PDF]
, 2017 For the past several decades, methods to harvest solar energy have been investigated intensively. A majority of the work done in this field has been on solar cells made with silicon – the most mature semiconductor material.
Matthews, Christopher
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Tin Oxide‐Anchored MXene Composites for Enhanced Hydrogen Evolution in Alkaline Media
Advanced Materials Interfaces, EarlyView.The schematic illustrates a SnO2/MXene heterostructure for efficient hydrogen evolution. SnO2 nanoparticles are uniformly anchored on conductive MXene nanosheets, enhancing charge transfer and catalytic activity. The MXene substrate provides high electrical conductivity and abundant active sites, while SnO2 facilitates water adsorption and dissociation.
Pratik Shinde +8 more
wiley +1 more source
Stretching magnetism with an electric field in a nitride semiconductor
Nature Communications, 2016 The wurtzite crystal structure of nitride semiconductors results in strong piezoelectricity. Here, the authors also achieve electric-field control of the magnetization of gallium manganese nitride, thus showing that piezoelectric and magnetoelectric ...
D. Sztenkiel +13 more
doaj +1 more source
, 2016 Nitride films are promising for advanced optoelectronic and electronic device applications. However, some challenges continue to impede development of high aluminum-containing devices.
Liang, Yu-Han, Nuhfer, T., Towe, Elias
core
Growth of single-crystal gallium nitride [PDF]
, 1970 Use of ultrahigh purity ammonia prevents oxygen contamination of GaN during growth, making it possible to grow the GaN at temperatures as high as 825 degrees C, at which point single crystal wafers are deposited on /0001/-oriented sapphire ...
Clough, R., Richman, D., Tietjen, J.
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Advanced Materials Technologies, EarlyView.Transducers convert physical signals into electrical and optical representations, yet each mechanism is bounded by intrinsic trade‐offs across bandwidth, sensitivity, speed, and energy. This review maps transduction mechanisms across physical scale and frequency, showing how heterogeneous integration and multiphysics co‐design transform isolated ...
Aolei Xu +8 more
wiley +1 more source
ARO-The Scientific Journal of Koya University, 2016 III-V semiconductors components such as Gallium Arsenic (GaAs), Indium Antimony (InSb), Aluminum Arsenic (AlAs) and Indium Arsenic (InAs) have high carrier mobilities and direct energy gaps.
Faten A. Chaqmaqchee
doaj +1 more source
Borophene: Crucial Challenges and the Way Forward
Advanced Science, EarlyView.This review explores the challenges and progress in borophene research, focusing on synthesis strategies, structural properties, and potential applications. It highlights key experimental breakthroughs, discusses theoretical insights into borophene's unique features, and addresses pathways for overcoming stability and scalability issues.
Zhixuan Li +3 more
wiley +1 more source
Applications and Implications of Wide-Bandgap Technologies in Microgrids: A Review
EnergiesThe next evolution in power electronics is being driven by wide-bandgap materials—particularly silicon carbide and gallium nitride power semiconductor devices—which increase efficiency and power density, thus ensuring their integration into high ...
Daniel Burmester +2 more
doaj +1 more source
Equations for filling factor estimation in opal matrix
, 2005 We consider two equations for the filling factor estimation of infiltrated zinc oxide (ZnO) in silica (SiO_2) opal and gallium nitride in ZnO opal. The first equation is based on the effective medium approximation, while the second one - on Maxwell ...
Abrarov +34 more
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