Results 111 to 120 of about 314,945 (334)
Characterization of GaN Nanorods Fabricated Using Ni Nanomasking and Reactive Ion Etching: A Top-Down Approach [PDF]
, 2013 Large thermal mismatch between GaN surface and sapphire results in compressive stress in Gallium Nitride (GaN) layer which degrades the device performance.
Christiansen, S. +4 more
core
IEEE transactions on power electronics, 2018 Gallium nitride high-electron-mobility transistors (GaN-HEMTs) suffer from trapping effects that increases device on-state resistance ($R_\mathrm{DS(on)}$) above its theoretical value. This increase is a function of the applied dc bias when the device is
Ke Li +2 more
semanticscholar +1 more source
Advanced Science, EarlyView.A meta‐YAG crystal with artificially order/disorder structures was fabricated to realize the efficient third‐harmonic generation at 343 nm with a conversion efficiency of 4.5×10−3, surpassing six orders of magnitude compared to bulk YAG crystal. Moreover, a wide spectral tunability from 331 to 356 nm was also achieved in the meta‐YAG, indicating its ...
Xiaotian Guo +6 more
wiley +1 more source
III-Nitride Materials: Properties, Growth, and Applications
CrystalsSince the activation of magnesium (Mg) in p-type gallium nitride (GaN) [...]
Yangfeng Li
doaj +1 more source
Adsorption Characteristics of Powders of Nanometric Gallium Nitride and Aluminium Nitride
Adsorption Science & Technology, 2002 The results of studies on new precursors for the preparation of gallium nitride and aluminium nitride were presented. The samples obtained were characterised by argon adsorption at 77 K. The variation of the porous structure parameters with the pyrolysis
L. Czepirski +3 more
doaj +1 more source
Peroxidase‐Mimicking Nanozymes for Rapid Detection of Infectious Diseases
Advanced Science, EarlyView.Peroxidase‐mimicking nanozymes (PMNs) have emerged as robust and versatile materials for rapid infectious disease diagnostics. This review highlights the rational design and controlled synthesis of PMNs, summarizes key biomarkers relevant to infectious diseases, examines their integration into diverse rapid detection platforms, and highlights ...
Shikuan Shao +5 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.III‐nitride semiconductors have revolutionized optoelectronics, enabling transformative technologies such as high‐efficiency LEDs and lasers. However, their use in intersubband optoelectronics has remained limited. This work marks an important step forward by demonstrating highly coherent inter‐well resonant tunneling injection in III‐nitride ...
Jimy Encomendero +6 more
wiley +1 more source
Epitaxial Growth of p‐Type β‐Ga2O3 Thin Films and Demonstration of a p–n Diode
Advanced Electronic Materials, EarlyView.This study demonstrates p‐type conductivity in β‐Ga2O3 via Te–Mg co‐doping using MOCVD. The films show tunable hole concentrations up to 1.78×1017 cm−3, and a fabricated p–n diode exhibits rectifying behavior. Density functional theory reveals that Te introduces an intermediate band, lowering the Mg acceptor ionization energy and enabling p‐type ...
Chuang Zhang +2 more
wiley +1 more source
Nature Communications, 2018 The combination of earth-abundant catalysts and semiconductors, for example, molybdenum sulfides and planar silicon, presents a promising avenue for the large-scale conversion of solar energy to hydrogen.
Baowen Zhou +9 more
semanticscholar +1 more source
Wafer‐Scale Split‐Channel a‐IGZO TFTs for Hump‐Free and Stress‐Robust Operation
Advanced Electronic Materials, EarlyView.This work identifies plasma‐induced edge region oxygen vacancies as the true origin of the hump in a‐IGZO TFTs and introduces a wafer‐scale split‐channel architecture that fully suppresses this instability. The simple mask‐level design achieves hump‐free and stress‐robust operation with significantly enhanced current drivability, offering a practical ...
So‐Jeong Park +8 more
wiley +1 more source