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Recent Developments in Deep‐Ultraviolet Flat Optics
Nanophotonics, Volume 15, Issue 10, 27 May 2026.Deep‐ultraviolet flat optics (DUVFO) is emerging as a key platform for next‐generation photonics, enabling advanced functionalities beyond conventional DUV optics. This review outlines materials, devices, and system advances, highlighting wide‐bandgap platforms, while identifying key challenges in dispersion control, characterization, and wafer‐scale ...
Omar A. M. Abdelraouf +2 more
wiley +1 more source
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The electronic structure of gallium nitride
Physica B: Condensed Matter, 1993The results of a density functional calculation on gallium nitride are given. We use norm-conserving pseudopotentials with sufficiently extended sets of plane waves to investigate the ground-state properties and the electronic band structure for the zincblende phase of GaN and compare them with the corresponding results for the wurtzite structure.
M. PALUMMO +3 more
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Radiation hardness of gallium nitride
IEEE Transactions on Nuclear Science, 2002Gallium nitride (GaN) light emitting diodes (LEDs) were irradiated at room temperature with electrons in the range 300-1400 keV. A threshold energy of 440 keV was observed, corresponding to a gallium atom displacement energy of 19/spl plusmn/2 eV. This value of the displacement energy compares with that of silicon carbide but is smaller than that of ...
Ionascut-Nedelcescu, A. +5 more
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Gallium Nitride Nanotubes by the Conversion of Gallium Oxide Nanotubes
Angewandte Chemie International Edition, 2003AbstractFor Abstract see ChemInform Abstract in Full Text.
Hu, Junqing +3 more
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Semiconductor Science and Technology, 2013
In the past two decades, there has been increasing research and industrial activity in the area of gallium nitride (GaN) electronics, stimulated first by the successful demonstration of GaN LEDs. While the promise of wide band gap semiconductors for power electronics was recognized many years before this by one of the contributors to this issue (J ...
Siddharth Rajan, Debdeep Jena
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In the past two decades, there has been increasing research and industrial activity in the area of gallium nitride (GaN) electronics, stimulated first by the successful demonstration of GaN LEDs. While the promise of wide band gap semiconductors for power electronics was recognized many years before this by one of the contributors to this issue (J ...
Siddharth Rajan, Debdeep Jena
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Hydrogenation of Gallium Nitride
MRS Proceedings, 1993AbstractA comparative study of the effects of hydrogen in n-type (unintentionally and Si-doped) as well as p-type (Mg-doped) MBE-grown GaN is presented. Hydrogenation above 500°C reduces the hole concentration at room temperature in the p-type material by one order of magnitude. Three different microscopic effects of hydrogen are suggested: Passivation
M. S. Brandt +4 more
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2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497), 2002
In this paper we report on the development of GaN grown directly on standard Si wafers. Using a transition layer scheme, which addresses both the thermal expansion and lattice mismatch in this material system, excellent epitaxial film quality has been demonstrated, as evidenced by 2DEG electron mobilities.
R. Borges +5 more
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In this paper we report on the development of GaN grown directly on standard Si wafers. Using a transition layer scheme, which addresses both the thermal expansion and lattice mismatch in this material system, excellent epitaxial film quality has been demonstrated, as evidenced by 2DEG electron mobilities.
R. Borges +5 more
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Electrostriction in gallium nitride
Applied Physics Letters, 1999Electromechanical effects in the compound semiconductor gallium nitride have been measured. The electromechanical response is found to include a significant contribution from electrostriction. The measured value of the electrostrictive coefficient M33 in a polycrystalline sample of GaN is (1.2±0.1)×10−18 m2 V−2.
I. L. Guy, S. Muensit, E. M. Goldys
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ACS Nano, 2015
III-nitride based nanorods and nanowires offer great potential for optoelectronic applications such as light emitting diodes or nanolasers. We report nanoscale optical studies of InGaN/GaN nanodisk-in-rod heterostructures to quantify uniformity of light emission on the ensemble level, as well as the emission characteristics from individual InGaN ...
Xiang, Zhou +5 more
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III-nitride based nanorods and nanowires offer great potential for optoelectronic applications such as light emitting diodes or nanolasers. We report nanoscale optical studies of InGaN/GaN nanodisk-in-rod heterostructures to quantify uniformity of light emission on the ensemble level, as well as the emission characteristics from individual InGaN ...
Xiang, Zhou +5 more
openaire +2 more sources