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Emerging gallium nitride based devices
Proceedings of the IEEE, 1995Wide bandgap GaN has long been sought for its applications to blue and UV emitters and high temperature/high power electronic devices. Recent introduction of commercial blue and blue-green LED's have led to a plethora of activity in all three continents into the heterostructures based on GaN and its alloys with AlN and InN.
S. N. Mohammad +2 more
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Single-crystal gallium nitride nanotubes
Nature, 2003Since the discovery of carbon nanotubes in 1991 (ref. 1), there have been significant research efforts to synthesize nanometre-scale tubular forms of various solids. The formation of tubular nanostructure generally requires a layered or anisotropic crystal structure.
Joshua, Goldberger +6 more
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Perspective On Gallium Nitride
MRS Proceedings, 1989ABSTRACTThis paper is a historical review (mostly personal) of some major developments in this wide, direct gap material. It includes key technologies of synthesis, electrical and optical properties and many applications.
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Oxygen Segregation to Nanopipes in Gallium Nitride
MRS Proceedings, 2005AbstractThis paper examines the core structure and composition of threading dislocations in GaN grown by hydride vapour phase epitaxy. Transmission electron microscopy showed that screw dislocations have widely varying core structures from open cores (“nanopipes”) to closed cores, with irregular variations between the two observed along the length of ...
Hawkridge, ME, Cherns, D
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Piezoelectric coefficients of gallium arsenide, gallium nitride and aluminium nitride
2009The present work represents the first use of the interferometric technique for determining the magnitude and sign of the piezoelectric coefficients of III-V compound semiconductors, in particular gallium arsenide (GaAs), gallium nitride (GaN), and aluminium nitride (AIN).
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Journal of The Electrochemical Society, 1971
The thermal decomposition of a gallium tribromide‐ammonia complex in an ammonia, argon, or nitrogen atmosphere has been used for the deposition of gallium nitride films on silicon and hexagonal silicon carbide substrates in a gas flow system. The substrate temperature and the nature of the ambient are the most important parameters of the deposition ...
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The thermal decomposition of a gallium tribromide‐ammonia complex in an ammonia, argon, or nitrogen atmosphere has been used for the deposition of gallium nitride films on silicon and hexagonal silicon carbide substrates in a gas flow system. The substrate temperature and the nature of the ambient are the most important parameters of the deposition ...
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Nanopipes in Gallium Nitride Nanowires and Rods
Nano Letters, 2008Gallium nitride nanowires and rods synthesized by a catalyst-free vapor-solid growth method were analyzed with cross section high-resolution transmission electron microscopy. The cross section studies revealed hollow core screw dislocations, or nanopipes, in the nanowires and rods.
Benjamin W, Jacobs +3 more
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MRS Proceedings, 1987
ABSTRACTGallium nitride has many useful properties that include a large direct gap, high electrical and thermal conductivities, and nearly the hardness of sapphire. GaN decomposes at -100°C, can sustain high electron velocities and exhibit acoustoelectric effects. But two challenges remain: to make it conducting p-type and to synthesize the cubic phase
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ABSTRACTGallium nitride has many useful properties that include a large direct gap, high electrical and thermal conductivities, and nearly the hardness of sapphire. GaN decomposes at -100°C, can sustain high electron velocities and exhibit acoustoelectric effects. But two challenges remain: to make it conducting p-type and to synthesize the cubic phase
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2005
Abstract : A vapor phase growth system intended for the growth of bulk gallium nitride crystals was investigated. Potential advantages of the growth technique are cheap source materials of high purity, no corrosive gasses, and low operating and equipment costs.
Umesh K. Mishra, Sten J. Heikman
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Abstract : A vapor phase growth system intended for the growth of bulk gallium nitride crystals was investigated. Potential advantages of the growth technique are cheap source materials of high purity, no corrosive gasses, and low operating and equipment costs.
Umesh K. Mishra, Sten J. Heikman
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2015
GaN High-Voltage Power Devices Joachim Wurfl AlGaN/GaN High-Electron-Mobility Transistors Grown by Ammonia Source Molecular Beam Epitaxy Yvon Cordier Gallium Nitride Transistors on Large-Diameter Si (111) Substrate Subramaniam Arulkumaran and Geok Ing Ng GaN-HEMT Scaling Technologies for High-Frequency RF and Mixed Signal Applications Keisuke Shinohara
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GaN High-Voltage Power Devices Joachim Wurfl AlGaN/GaN High-Electron-Mobility Transistors Grown by Ammonia Source Molecular Beam Epitaxy Yvon Cordier Gallium Nitride Transistors on Large-Diameter Si (111) Substrate Subramaniam Arulkumaran and Geok Ing Ng GaN-HEMT Scaling Technologies for High-Frequency RF and Mixed Signal Applications Keisuke Shinohara
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