Results 81 to 90 of about 314,945 (334)

Evolution of Monolithic Technology for Wireless Communications: GaN MMIC Power Amplifiers For Microwave Radios

Micromachines, 2014
This paper presents the progress of monolithic technology for microwaveapplication, focusing on gallium nitride technology advances in the realization of integratedpower amplifiers. Three design examples, developed for microwave backhaul radios, areshown.
Vittorio Camarchia, Marco Pirola, Roberto Quaglia   +2 more
doaj   +1 more source

Direct Evidence of Mg Incorporation Pathway in Vapor-Liquid-Solid Grown p-type Nonpolar GaN Nanowires

, 2015
Doping of III-nitride based compound semiconductor nanowires is still a challenging issue to have a control over the dopant distribution in precise locations of the nanowire optoelectronic devices.
Amirthapandian, S., Bera, S., Bhattacharya, Anirban, Dhara, Sandip, Pandian, Ramanathaswamy, Patsha, Avinash   +5 more
core   +2 more sources

Thermal Atomic Layer Deposition of Polycrystalline Gallium Nitride

Journal of Physical Chemistry C, 2019
We report the successful preparation of polycrystalline gallium nitride (poly-GaN) layers by thermal atomic layer deposition (ALD) at low temperatures (375–425 °C) from trimethylgallium (TMG) and ammonia (NH3) precursors.
Souri Banerjee, A. Aarnink, D. Gravesteijn, A. Kovalgin   +3 more
semanticscholar   +1 more source

Coupling Nanostructured Plasmon–Strain Microwave Waveguide to Spin Defects in Hexagonal Boron Nitride for High‐Sensitivity Quantum Sensors

Advanced Materials, EarlyView.
Coupling of spin‐active VB−$V_B^ - $ defects in hBN with alumina‐coated gold plasmonic nanoresonators (PNRs), integrated into a microwave‐efficient waveguide, constitutes a plasmon‐strain architecture that enhances their photoluminescence and spin contrast. This platform enables a tenfold quantum yield improvement and achieves a DC magnetic sensitivity
Naveed Hussain, Sumukh Vaidya, Saakshi Dikshit, Shahriar Esmaeili, Paul Schmalenberg, Hayate Yamano, Katsunori Danno, Biswajit Sahoo, Shougo Higashi, Ercan M. Dede, Tongcang Li, Debasish Banerjee, Songtao Wu   +12 more
wiley   +1 more source

Temperature stability of intersubband transitions in AlN/GaN quantum wells

, 2010
Temperature dependence of intersubband transitions in AlN/GaN multiple quantum wells grown with molecular beam epitaxy is investigated both by absorption studies at different temperatures and modeling of conduction-band electrons.
Andersson, Thorvald G., Berland, Kristian, Farivar, Rashid, Hyldgaard, Per, Larsson, Anders, Stattin, Martin, Sultan, D. M. S., Wang, Shu Min   +7 more
core   +1 more source

Gallium Nitride Nanotube Lasers

CLEO: 2014, 2014
Lasing is demonstrated from gallium nitride nanotubes fabricated using a two-step top-down technique. By optically pumping, we observed characteristics of lasing: a clear threshold, a narrow spectral, and guided emission from the nanotubes.
Li, C., Hurtado, A., Wright, J. B., Xu, H., Liu, S., Luk, T. S., Brener, I., Brueck, S. R. J., Wang, G. T.   +8 more
openaire   +3 more sources

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

Advanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam, William S. Rogers, Chen‐Yu Hu, Ming‐Yuan Song, Xinyu Bao, Shehrin Sayed, Jean Anne C. Incorvia   +6 more
wiley   +1 more source

Gallium Nitride in Heterogeneous Photocatalysis: Fundamental Insights and Emerging Trends

ChemistryEurope
The global energy crisis and environmental challenges necessitate the development of sustainable chemical processes powered by renewable energy sources.
Hyotaik Kang, Chao‐Jun Li
doaj   +1 more source

Gallium Nitride FET Model

IOP Conference Series: Materials Science and Engineering, 2019
IOP Conference Series: Materials Science and Engineering, 5 pages, 2 ...
Zebrev, G. I., Orlov, V. V.
openaire   +2 more sources

Dielectric and Gate Metal Engineering for Threshold Voltage Modulation in Enhancement Mode Monolayer MoS2 Field Effect Transistors

Advanced Materials, EarlyView.
Enhancement‐mode monolayer MoS2 FETs with low threshold voltage are essential for low‐power electronics. The threshold voltage can be tuned by the gate metal work function when the semiconductor/dielectric interface is clean. Interfaces between monolayer MoS2 and ZrO2 or hBN allow effective work‐function modulation of the threshold voltage, in contrast
Lixin Liu, Han Yan, Leyi Loh, Kamal Kumar Paul, Soumya Sarkar, Deepnarayan Biswas, Tien‐Lin Lee, Takashi Taniguchi, Kenji Watanabe, Manish Chhowalla, Yan Wang   +10 more
wiley   +1 more source