Results 211 to 220 of about 10,735 (250)

Insulating gallium oxide layer produced by thermal oxidation of gallium‐polar GaN

physica status solidi c, 2014
AbstractThe benefits of dry oxidation of n ‐GaN for the fabrication of metal‐oxide‐semiconductor structures are reported. GaN thin films grown on sapphire by MOCVD were thermally oxidized for 30, 45 and 60 minutes in a pure oxygen atmosphere at 850 °C to produce thin, smooth GaOx layers.
T. Hossain, D. Wei, N. Nepal, N. Y. Garces, J. K. Hite, H. M. Meyer, C. R. Eddy, Troy Baker, Ashley Mayo, Jason Schmitt, J. H. Edgar   +10 more
openaire   +1 more source

The Spectrum of Gallium Oxide

Physical Review, 1934
The spectrum of gallium oxide has been photographed with a 21-foot grating. A band system lying in the region 3800-4200A has been identified as a $^{2}\ensuremath{\Sigma}\ensuremath{\rightarrow}^{2}\ensuremath{\Sigma}$ transition and a vibrational quantum analysis is given.
openaire   +1 more source

Hydrogen Chemisorption on Gallium Oxide Polymorphs

Langmuir, 2004
The chemisorption of H(2) over a set of gallia polymorphs (alpha-, beta-, and gamma-Ga(2)O(3)) has been studied by temperature-programmed adsorption equilibrium and desorption (TPA and TPD, respectively) experiments, using in situ transmission infrared spectroscopy.
Sebastián E, Collins, Miguel A, Baltanás, Adrian L, Bonivardi   +2 more
openaire   +2 more sources

ChemInform Abstract: OXIDE‐SUBSTRATE AND OXIDE‐OXIDE CHEMICAL REACTIONS IN THERMALLY ANNEALED ANODIC FILMS ON GALLIUM ANTIMONIDE, GALLIUM ARSENIDE, AND GALLIUM PHOSPHIDE

Chemischer Informationsdienst, 1981
AbstractMit Hilfe der Raman‐Streuung und von ternären Phasendiagrammen wird für die Reaktionen zwischen Oxid und Substrat in wännebehandelten anodischen Filmen auf GaSb und GaAs ein fundamentales Schema identifiziert.
G. P. SCHWARTZ, G. J. GUALTIERI, J. E. GRIFFITHS, C. D. THURMOND, B. SCHWARTZ   +4 more
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Gallium oxide buffer layers for gallium nitride epitaxy

2013
OPTICA APPLICATA; 01/2013; ISSN 1429 ...
Korbutowicz, Ryszard, Wnęk, Jan, Panachida, Paweł, Serafińczuk, Jarosław, Srnanek, Rudolf   +4 more
openaire   +2 more sources

Influence of the Substrate Material on the Properties of Gallium-Oxide Films and Gallium-Oxide-Based Structures

Semiconductors, 2019
The influence of the substrate material on the properties of gallium-oxide films formed on sapphire and n(p)-GaAs semiconductor wafers by high-frequency magnetron-assisted deposition is studied. The films grown on insulating substrates, as a rule, are of the n type and possess a high resistance.
V. M. Kalygina, T. Z. Lygdenova, Yu. S. Petrova, E. V. Chernikov   +3 more
openaire   +1 more source

Thermal oxidation of gallium arsenide

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1989
Here we present some results of transmission electron microscopy and secondary ion mass spectroscopy of thermally oxidized gallium arsenide with different types of dopants. At temperatures below 400 °C an amorphous oxide is formed. Oxidation at temperatures between 500 and 600 °C initially produces an epitaxial film of γ-Ga2O3. As the reaction proceeds,
Othon R. Monteiro, James W. Evans
openaire   +1 more source

Comparative study of growth and properties of nitrogen-oxygen-nitrogen annealed gallium oxide, cerium gallium oxide, and gallium cerium oxide films

Physica Scripta
Abstract This study investigated the structural, optical, and electrical properties of a new gallium cerium oxide ternary film over gallium oxide and phase separated cerium gallium oxide films. Annealing in a nitrogen-oxygen-nitrogen ambient formed a stable single-phase structure.
Puteri Haslinda Megat Abdul Hedei, Zainuriah Hassan, Sha Shiong Ng, Hock Jin Quah   +3 more
openaire   +1 more source

Gallium Oxide Film by Anodic Oxidization of Gallium

Japanese Journal of Applied Physics, 1977
Norio Suzuki, Koichi Matsushita, Takashi Hariu, Hiroshi Adachi, textscYukio Shibata   +4 more
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Phase Transformations in Gallium Oxide Layers

Technical Physics Letters, 2023
Osipov A. V., Sharafudinov Sh. Sh., Kremleva A. V., Osipova E. V., Smirnov A. M., Kukushkin S. A.   +5 more
openaire   +1 more source