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Thermal oxidation of gallium arsenide
Czechoslovak Journal of Physics, 1968The experimental results of this study of the thermal oxidation of GaAs under atmospheric conditions and in dry oxygen over a temperature range of 400–530‡C are presented. It is shown that for temperatures in the range of 400–450‡C the oxide layers are formed according to a parabolic law while for temperatures in the range of 480–530‡C they are formed ...
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β‐Gallium Oxide Devices: Progress and Outlook
Physica Status Solidi - Rapid Research Letters, 2021Masataka Higashiwaki
exaly
Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon
Nano Letters, 2021Brian C Olsen +2 more
exaly
Activity of Gallium in NiGa and Associated Gallium-Gallium Oxide Equilibria
Journal of The Electrochemical Society, 1964openaire +1 more source
Single-source precursors to gallium and indium oxide thin films
Coordination Chemistry Reviews, 2011David Pugh +2 more
exaly
Synthesis and characterization of gallium oxide nanoparticles
Arabian Journal of Chemistry, 2009M Rafiq H Siddiqui
exaly
Recent development of gallium oxide thin film on GaN
Materials Science in Semiconductor Processing, 2013Kuan Yew Cheong
exaly

