Results 221 to 230 of about 10,735 (250)
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Thermal oxidation of gallium arsenide

Czechoslovak Journal of Physics, 1968
The experimental results of this study of the thermal oxidation of GaAs under atmospheric conditions and in dry oxygen over a temperature range of 400–530‡C are presented. It is shown that for temperatures in the range of 400–450‡C the oxide layers are formed according to a parabolic law while for temperatures in the range of 480–530‡C they are formed ...
openaire   +1 more source

Gallium Oxide

2019
Vladimir I. Nikolaev   +3 more
openaire   +2 more sources

Gallium Oxide Glasses

Key Engineering Materials, 1994
Josef C. Lapp, William H. Dumbaugh
openaire   +1 more source

β‐Gallium Oxide Devices: Progress and Outlook

Physica Status Solidi - Rapid Research Letters, 2021
Masataka Higashiwaki
exaly  

Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon

Nano Letters, 2021
Brian C Olsen   +2 more
exaly  

Single-source precursors to gallium and indium oxide thin films

Coordination Chemistry Reviews, 2011
David Pugh   +2 more
exaly  

Synthesis and characterization of gallium oxide nanoparticles

Arabian Journal of Chemistry, 2009
M Rafiq H Siddiqui
exaly  

Recent development of gallium oxide thin film on GaN

Materials Science in Semiconductor Processing, 2013
Kuan Yew Cheong
exaly  

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