Results 241 to 250 of about 57,224 (287)

Synthesis of Gallium‐Filled Gallium Oxide–Zinc Oxide Composite Coaxial Nanotubes

Advanced Materials, 2003
Ga2O3–ZnO composite coaxial nanotubes have been fabricated via a simple process combining thermal reaction and physical evaporation. The resulting nanotubes are either empty or partially or completely filled with Ga (see Figure), forming Ga (core)–Ga2O3 (interlayer)–ZnO (outer shell) three‐layer coaxial nanocables.
J.Q. Hu, Y. Bando, Z.W. Liu
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Gallium Nitride Nanotubes by the Conversion of Gallium Oxide Nanotubes

Angewandte Chemie International Edition, 2003
AbstractFor Abstract see ChemInform Abstract in Full Text.
Hu, Junqing, Bando, Yoshio, Golberg, Dmitri, Liu, Quanlin   +3 more
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Gallium Oxide Films Prepared by Oxidation of Gallium in Oxygen-Hydrogen Plasma

2020 22nd International Conference on Transparent Optical Networks (ICTON), 2020
Nowadays, the oxide semiconductor materials research becomes one of the most challenging topics. We intend to develop a novel PECVD-based method for preparation of Ga 2 O 3 materials from elemental gallium as a precursor using plasma for initiation of the chemical interactions. In this work the oxygen-hydrogen gas mixture at different ratios O 2 /H 2
Leonid Mochalov, Alexander Logunov, Tatyana Sazanova, Daniela Gogova, Sergey Zelentsov, Pavel Yunin, Igor Prokhorov, Vladimir Malyshev, Vladimir Vorotyntsev   +8 more
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Bicrystalline gallium oxide nanobelts

Thin Solid Films, 2007
Abstract We have synthesized gallium oxide (Ga 2 O 3 ) nanobelts by heating GaN powders in the conventional furnace. The nanobelts exhibited a unique bicrystalline structure that consisted of two single-crystalline monoclinic Ga 2 O 3 nanobelts, which split along the twin boundary that exists at the centerline.
Hyoun Woo Kim, Seung Hyun Shim
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Hydrogen Chemisorption on Gallium Oxide Polymorphs

Langmuir, 2004
The chemisorption of H(2) over a set of gallia polymorphs (alpha-, beta-, and gamma-Ga(2)O(3)) has been studied by temperature-programmed adsorption equilibrium and desorption (TPA and TPD, respectively) experiments, using in situ transmission infrared spectroscopy.
Sebastián E, Collins, Miguel A, Baltanás, Adrian L, Bonivardi   +2 more
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Gallium oxide buffer layers for gallium nitride epitaxy

2013
OPTICA APPLICATA; 01/2013; ISSN 1429 ...
Korbutowicz, Ryszard, Wnęk, Jan, Panachida, Paweł, Serafińczuk, Jarosław, Srnanek, Rudolf   +4 more
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Insulating gallium oxide layer produced by thermal oxidation of gallium‐polar GaN

physica status solidi c, 2014
AbstractThe benefits of dry oxidation of n ‐GaN for the fabrication of metal‐oxide‐semiconductor structures are reported. GaN thin films grown on sapphire by MOCVD were thermally oxidized for 30, 45 and 60 minutes in a pure oxygen atmosphere at 850 °C to produce thin, smooth GaOx layers.
T. Hossain, D. Wei, N. Nepal, N. Y. Garces, J. K. Hite, H. M. Meyer, C. R. Eddy, Troy Baker, Ashley Mayo, Jason Schmitt, J. H. Edgar   +10 more
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ChemInform Abstract: OXIDE‐SUBSTRATE AND OXIDE‐OXIDE CHEMICAL REACTIONS IN THERMALLY ANNEALED ANODIC FILMS ON GALLIUM ANTIMONIDE, GALLIUM ARSENIDE, AND GALLIUM PHOSPHIDE

Chemischer Informationsdienst, 1981
AbstractMit Hilfe der Raman‐Streuung und von ternären Phasendiagrammen wird für die Reaktionen zwischen Oxid und Substrat in wännebehandelten anodischen Filmen auf GaSb und GaAs ein fundamentales Schema identifiziert.
G. P. SCHWARTZ, G. J. GUALTIERI, J. E. GRIFFITHS, C. D. THURMOND, B. SCHWARTZ   +4 more
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Thermal oxidation of gallium arsenide

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1989
Here we present some results of transmission electron microscopy and secondary ion mass spectroscopy of thermally oxidized gallium arsenide with different types of dopants. At temperatures below 400 °C an amorphous oxide is formed. Oxidation at temperatures between 500 and 600 °C initially produces an epitaxial film of γ-Ga2O3. As the reaction proceeds,
Othon R. Monteiro, James W. Evans
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Solvothermal oxidation of gallium metal

Ceramics International, 2009
Abstract Solvothermal oxidation of gallium metal in various organic solvents at 300 °C under the autogenous vapor pressure of the solvents was examined. The reaction of gallium metal in 1-butanol or 2-methoxy-ethanol at 300 °C did not proceed and unreacted gallium metal was recovered even with prolonged reaction time. On the other hand, gallium metal
Kim, Sung-Wook, Iwamoto, Shinji, Inoue, Masashi   +2 more
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