Results 251 to 260 of about 57,224 (287)

Comparative study of growth and properties of nitrogen-oxygen-nitrogen annealed gallium oxide, cerium gallium oxide, and gallium cerium oxide films

Physica Scripta
Abstract This study investigated the structural, optical, and electrical properties of a new gallium cerium oxide ternary film over gallium oxide and phase separated cerium gallium oxide films. Annealing in a nitrogen-oxygen-nitrogen ambient formed a stable single-phase structure.
Puteri Haslinda Megat Abdul Hedei, Zainuriah Hassan, Sha Shiong Ng, Hock Jin Quah   +3 more
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Gallium oxide technologies and applications

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2017
In this work, we provide early insight into the combined tradespace for both power switching and RF applications afforded by the high critical, electric-field strength of β-Ga 2 O 3 . MOSFETs formed by homoepitaxial growth of β-Ga 2 O 3 films doped with Sn, Si, and Ge on bulk substrates have been characterized electrically. Several key milestones have
Gregg Jessen, Kelson Chabak, Andrew Green, Neil Moser, Jonathan McCandless, Kevin Leedy, Antonio Crespo, Steve Tetlak   +7 more
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Noncrystalline ferromagnetic iron-gallium oxide

Journal of Applied Physics, 1982
Conductivity, magnetization, and Mössbauer spectra have been measured for a thin film of composition Fe0.50 3+Fe0.19 2+Ga1.37O3, sputtered from a target of FeGaO3. The film shows thermally activated electrical conductivity in the range 150–300 K with activation energy 0.26 (2) eV, and a room temperature resistivity of 3×104 Ω-cm.
J. M. D. Coey, E. Devlin, R. J. Gambino
openaire   +1 more source

MBE GROWN ALUMINUM OXIDE AND ALUMINUM-GALLIUM OXIDE THIN FILMS FOR BETA-GALLIUM OXIDE POWER DEVICES

2019
β-Ga2O3 is a transparent conductive oxide and a relatively new member of the wide bandgap semiconductors family which has gained tremendous interest for power and RF electronics due to its ultra-wide bandgap, high breakdown field, and availability of high-quality cost-effective single-crystal wafers.
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Thermal oxidation of gallium arsenide

Czechoslovak Journal of Physics, 1968
The experimental results of this study of the thermal oxidation of GaAs under atmospheric conditions and in dry oxygen over a temperature range of 400–530‡C are presented. It is shown that for temperatures in the range of 400–450‡C the oxide layers are formed according to a parabolic law while for temperatures in the range of 480–530‡C they are formed ...
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Gallium Oxide Film by Anodic Oxidization of Gallium

Japanese Journal of Applied Physics, 1977
Norio Suzuki, Koichi Matsushita, Takashi Hariu, Hiroshi Adachi, textscYukio Shibata   +4 more
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Photoenhanced oxidation of gallium arsenide

Journal of Applied Physics, 1983
Auger electron spectroscopy has been used to observe the influence of low-intensity visible/near-ultraviolet radiation on the oxidation of n- and p-type GaAs (110). Irradiation increases the rate of formation of the first monolayer by factors of 5–10 for p-type and 10–20 for n-type material. Kelvin-probe measurements of the change in work function with
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Gallium Oxide

2019
Vladimir I. Nikolaev, Sergey I. Stepanov, Alexey E. Romanov, Vladislav E. Bougrov   +3 more
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Gallium Oxide Glasses

Key Engineering Materials, 1994
Josef C. Lapp, William H. Dumbaugh
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Phase Transformations in Gallium Oxide Layers

Technical Physics Letters, 2023
Osipov A. V., Sharafudinov Sh. Sh., Kremleva A. V., Osipova E. V., Smirnov A. M., Kukushkin S. A.   +5 more
openaire   +1 more source