Results 121 to 130 of about 1,376,697 (345)
Prb-GAN: A Probabilistic Framework for GAN Modelling
Generative adversarial networks (GANs) are very popular to generate realistic images, but they often suffer from the training instability issues and the phenomenon of mode loss. In order to attain greater diversity in GAN synthesized data, it is critical to solving the problem of mode loss.
George, Blessen+2 more
openaire +2 more sources
A New Memory Effect in Bulk Crystals of 1T‐TaS2
A new memory effect is discovered in 1T‐TaS₂, appearing as a temperature shift in the metal to insulator transition, coinciding with the recently reported ramp reversal memory. These findings imply that ramp reversal memory is an emergent phenomenon, likely to appear in many different systems that share a few basic properties, which are discussed in ...
Avital Fried+4 more
wiley +1 more source
Barrier Inhomogeneity of Pt/GaN Junctions with a Low-Temperature ALD Grown ZnO Interlayer [PDF]
Semiconducting GaN can realize high performance electronic and power devices owing to its high electron mobility and thermal conductivity where good metal-semiconductor contact is prerequisite.
Hogyoung Kim+2 more
doaj +1 more source
The GAN is dead; long live the GAN! A Modern GAN Baseline
There is a widely-spread claim that GANs are difficult to train, and GAN architectures in the literature are littered with empirical tricks. We provide evidence against this claim and build a modern GAN baseline in a more principled manner. First, we derive a well-behaved regularized relativistic GAN loss that addresses issues of mode dropping and non ...
Huang, Yiwen+3 more
openaire +2 more sources
Flexible Optical Fiber Stress/Temperature Dual‐Mode Sensing Based on CaZnOS:Nd,Er
Temperature and stress sensing based on flexible optical fibers may be the key to future artificial intelligence's perception of the world, here an optical fiber sensor capable of realizing such dual mode sensing is preliminary confirmed based on CaZnOS:Nd3+,Er3+.
Pan Zheng+12 more
wiley +1 more source
The optimisation of GaN-based electronic and optoelectronic devices requires control over the doping of the material. However, device performance, particular for lateral transport electronic devices, is degraded by the presence of unintentional doping, which for heteroepitaxial GaN layers grown in the polar (0001) orientation is mainly confined to a ...
Tongtong Zhu, Rachel A. Oliver
openaire +3 more sources
Fabrication of in situ polymer‐encapsulated stable perovskite patterns of arbitrary shapes and pixel arrays with a resolution of 80 nm is reported by the femtosecond (fs) laser (800 nm) super‐resolution writing technique. The two‐photon absorption‐induced laser ablation is attributed to the achieved feature sizes as small as λ/10.
Xuebing Wen+8 more
wiley +1 more source
With the advent of technologies such as augmented/virtual reality (AR/VR) that are moving towards displays with high efficiency, small size, and ultrahigh resolution, the development of optoelectronic devices with scales on the order of a few microns or ...
Ayush Pandey+2 more
doaj +1 more source
High Performance Room Temperature Multiferroic Properties of w‐MnSe Altermagnet
Using first‐principles calculations, for the first time the Altermagneto‐Ferroelectric Coupling Effect (AFCE) is proposed, which enables control of both electric polarization and spin splitting in the band structure due to polyhedral rotations. This uncovers robust multiferroicity in wurtzite MnSe at room temperature, offering an exciting route for ...
Djamel Bezzerga, Imran Khan, Jisang Hong
wiley +1 more source
Insightful visions – Artificial intelligence large language models in scientific writing
In the realm of ophthalmic research, the integration of artificial intelligence (AI) is burgeoning, promising a revolution in how scientific knowledge is written and disseminated.
John D Akkara
doaj +1 more source