Results 131 to 140 of about 1,056,535 (282)

GaN (AlGaN/GaN) Si GaN substrates, SiC and SOI CMOS Hiten

III-Vs Review, 2003
AbstractThe materials were well aired in their developments to meet the challenge of the high temperature markets at the Hiten Oxford conference. But speaker after speaker acknowledged that lack of standards, very small markets and major problems of packaging and interconnects were still real stumbling blocks.This is a short news story only.
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Impedance‐Matched High‐Overtone Thickness‐Shear Bulk Acoustic Resonators With Scalable Mode Volume

Advanced Science, EarlyView.
A bottom‐electrode‐free high‐overtone bulk acoustic resonator is achieved by lateral excitation of antisymmetric thickness‐shear modes on a lithium‐niobate‐on‐silicon platform. Planar electrode geometry eliminates conventional loading along the resonance path and confines acoustic energy within the electrode gap.
Zi‐Dong Zhang, Zhen‐Hui Qin, Yi‐Han He, Yun‐Fei Cheng, Hao Yan, Si‐Yuan Yu, Ming‐Hui Lu, Yan‐Feng Chen   +7 more
wiley   +1 more source

A Virus‐Inducible E3–RLCK–MADS Module Coordinates Suppression of Plant Immunity and Fertility in Rice

Advanced Science, EarlyView.
ABSTRACT Viruses often hijack host developmental programs to promote infection, but the mechanistic links between reproductive regulation and antiviral immunity remain incompletely understood. Here, we identify a virus‐triggered hierarchical degradation cascade that links antiviral immunity and fertility regulation in rice. We show that the rice grassy
Yuansheng Wu, Fengling Wu, Shiting Huang, Denglu Yang, Xin Lei, Xue Zhang, Na Liu, Peng Gan, Chuan Li, Jie Zhang, Ming Wu, Qingxiao Jia, Shanshan Zhao, Jianguo Wu   +13 more
wiley   +1 more source

Progress in Strain Engineering of 2D‐Integrated Heterostructures for Ultrasensitive Sensors

Advanced Science, EarlyView.
 . ABSTRACT Two‐dimensional (2D) integrated heterostructures have emerged as a cornerstone in the advancement of next‐generation sensor technologies. These heterostructures, which combine materials with different dimensionalities, have led to significant breakthroughs in sensing performance and device integration.
That Buu Ton, Tuan Sang Tran, Duc Khanh Tran, Van Thanh Dau, Dzung Viet Dao   +4 more
wiley   +1 more source

Recent Advances and Challenges in Ammonia‐Hydrogen Energy Conversion

Advanced Science, EarlyView.
This work summarizes the latest progress of various catalytic methods in ammonia‐hydrogen energy conversion. The challenges and outlook of ammonia‐hydrogen energy conversion system are also emphasized. This work expects to build a blueprint of renewable and efficient ammonia‐hydrogen energy conversion systems under mild conditions.
Menghao Lv, Runchao Qin, Jianshuo Chen, Kaiwen Yang, Jianwei Lu, Weiwei Lei, Yifu Yu   +6 more
wiley   +1 more source

Fluorescence Tuning of Carbon Dots from Red to Blue via UV‐Induced Photochemical Etching

Advanced Science, EarlyView.
A UV‐driven photochemical process enables continuous color evolution of carbon dots from red to blue using a single irradiation parameter. Progressive photoetching restructures graphitic domains and surface states, allowing full visible‐spectrum emission control.
Nanzhi Zheng, Yuchen Yang, Jingwei Xu, Jincheng Gan, Yinuo An, Xinyu Li, Guohua Chen   +6 more
wiley   +1 more source

Deciphering the Dynamic Balance Between Solvation Strength and Polysulfides Reaction Heterogeneity in Practical Lithium‐Sulfur Batteries

Advanced Science, EarlyView.
A weakly solvating fluorinated cosolvent (1200ET) enables precise solvation‐power regulation in Li–S batteries, decoupling interfacial stabilization from sulfur redox kinetics. This approach suppresses polysulfide dissolution while preserving reaction kinetics, leading to a stable Li metal interface and high‐energy multilayer pouch cells, revealing a ...
Huidong Dai, Pranathi Garlapati, Srinidi Badhrinathan, Luisa Gomes, Tongtai Ji, Dominik Wierzbicki, Yonghua Du, Neville Pavri, Sanjeev Mukerjee, Gaind P. Pandey   +9 more
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Electrically Tunable Room‐Temperature Microwave Oscillations in GaN/AlN Triple‐Barrier Resonant Tunneling Diodes

Advanced Electronic Materials, EarlyView.
III‐nitride semiconductors have revolutionized optoelectronics, enabling transformative technologies such as high‐efficiency LEDs and lasers. However, their use in intersubband optoelectronics has remained limited. This work marks an important step forward by demonstrating highly coherent inter‐well resonant tunneling injection in III‐nitride ...
Jimy Encomendero, Naomi Pieczulewski, Eegene Chung, Vladimir Protasenko, David A. Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

Advanced Electronic Materials, EarlyView.
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim, Seung Kyu Ryoo, Min Kyu Yeom, Dong Jae Kim, Cheol Seong Hwang   +4 more
wiley   +1 more source

Gans

, 2012
Source: Friedrich Schiller: Sämtliche Werke, Auf Grund der Originaldrucke herausgegeben von Gerhard Fricke und Herbert G. Göpfert in Verbindung mit Herbert Stubenrauch, Band 1–5, 3. Auflage, München: Hanser, 1962.
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