Results 121 to 130 of about 276,670 (296)
Remote temperature mapping of high-power InGaN/GaN MQW flip-chip design LEDs
We report on the study of heat 2D-distribution in InGaN LEDs with the stress made on local device overheating and temperature gradients inside the structure.
Zakheіm А. L. +3 more
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Defect‐Functionalization‐Mediated Tunneling Drives Nonlinear Photoemission in Perovskites
This cover illustration depicts CsPbBr3 perovskite nanocrystals embedded with functionalized defect vacancies, where electrons migrate through defect‐mediated pathways and emit as lightning‐like beams. The imagery visualizes the core discovery of our work—defect‐functionalization‐mediated tunneling enabling nonlinear photoemission, where deep‐level ...
Hang Ren +9 more
wiley +1 more source
A nano‐plasma device enables watt‐level on‐chip THz generation through picosecond switching triggered by secondary electron emission avalanche. An ultra‐dense electron sheet initiates nano‐plasma formation within a ∼100 nm gap, driving rapid energy release into an integrated resonator.
Guangyu Sun +4 more
wiley +1 more source
Adsorption of barium on surface of GaN(0001)
For the first time, the adsorption of barium atoms on the surface of the (0001) face of GaN was calculated using the density functional method. The 2D GaN layer was modeled using a GaN(0001) 2×2 supercell containing 10 GaN bilayers.
M.N. Lapushkin
doaj +1 more source
Deep Generative Adversarial Networks For Noise Reduction in Medical Images: A Review [PDF]
Imaging is a vital component of the diagnostic and early detection processes for many medical disorders. However, the noise in the images can sometimes interfere with the accuracy of the diagnosis. Speckle noise, Poisson noise, salt and pepper noise, and
Zahraa Hussien, Abbas Al-Asadi
doaj +1 more source
Vertically aligned graphene microstrip pads (GMPs) break the traditional thermomechanical trade‐off in thermal interface materials. It simultaneously achieves an ultrahigh through‐plane thermal conductivity of 565.92 W m−1 K−1 and an ultralow compressive modulus below 115.16 kPa.
Xu Ran +7 more
wiley +1 more source
Impedance‐Matched High‐Overtone Thickness‐Shear Bulk Acoustic Resonators With Scalable Mode Volume
A bottom‐electrode‐free high‐overtone bulk acoustic resonator is achieved by lateral excitation of antisymmetric thickness‐shear modes on a lithium‐niobate‐on‐silicon platform. Planar electrode geometry eliminates conventional loading along the resonance path and confines acoustic energy within the electrode gap.
Zi‐Dong Zhang +7 more
wiley +1 more source
ObjectivesIn the process of GaN ultra-precision polishing, diamond abrasives tend to agglomerate, leading to an increase in the average particle size of abrasives in the polishing slurry, which negatively impacts the surface precision of GaN.
Feng CHENG +7 more
doaj +1 more source
ABSTRACT Viruses often hijack host developmental programs to promote infection, but the mechanistic links between reproductive regulation and antiviral immunity remain incompletely understood. Here, we identify a virus‐triggered hierarchical degradation cascade that links antiviral immunity and fertility regulation in rice. We show that the rice grassy
Yuansheng Wu +13 more
wiley +1 more source
Etching Behavior of GaN/GaAs(001) Epilayers Grown by MOVPE
Wet etching characteristics of cubic GAN (c-GaN) thin films grown on GaAs(001) by metalorganic vapor phase epitaxy (MOVPE) are investigated. The samples are etched in HCl, H_3PO_4, KOH aqueous solutions, and molten KOH at temperatures in the range of 90 ...
Fu Yi +7 more
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