Results 261 to 270 of about 1,088,192 (320)

High-Cycle Fatigue Life Prediction of Additive Manufacturing Inconel 718 Alloy via Machine Learning. [PDF]

Materials (Basel)
Song Z, Peng J, Zhu L, Deng C, Zhao Y, Guo Q, Zhu A.   +6 more
europepmc   +1 more source

Sidewall Suppression and Top Surface Enhancement of Light Extraction Efficiency in Vertically Stacked Full‐Color Micro‐LEDs Based on L‐Shaped Metal Walls

Advanced Electronic Materials, EarlyView.
This study introduces an L‐shaped metal wall structure in vertically stacked full ‐ color Micro light ‐ emitting diodes to suppress sidewall emission and enhance top light extraction efficiency. Through parameter optimization and ray‐tracing simulations, sidewall emission reduced by up to 68.04%, while top LEE improved by 196.18% (blue) and 51.69 ...
Huachang Guo, Jun He, Jie Sun, Kaixin Zhang, Zhonhang Huang, Tailiang Guo, Qun Yan, Victor Belyaev, Aslan Abduev, Alexander Kazak   +9 more
wiley   +1 more source

Dual decoding generative adversarial networks for infrared image enhancement. [PDF]

Sci Rep
Yu Y, Jiang L, Hu Q, Cai Q, Zeng Q, Sun X.   +5 more
europepmc   +1 more source

Self‐Powered AlGaN/GaN Photovoltaic‐Integrated UV Photodetector: Rapid Response with Persistent Photoconductivity Suppression

Advanced Electronic Materials, EarlyView.
Persistent photoconductivity (PPC) hampers rapid UV photodetection in conventional GaN‐based photodetectors. In this work, a self‐powered AlGaN/GaN photovoltaic‐photodetector integrated configuration (PPIC) is presented to effectively suppress the PPC for high‐frequency applications.
Yuhan Pu, Yung C. Liang
wiley   +1 more source

Systematic review of generative adversarial networks (GANs) in cell microscopy: Trends, practices, and impact on image augmentation. [PDF]

PLoS One
Lesmes-Leon DN, Dengel A, Ahmed S.
europepmc   +1 more source

Effect of the AlGaO Spacer Layer on the Performance of β‐Gallium Oxide Metal–Oxide Semiconductor Field Effect Transistors

Advanced Electronic Materials, EarlyView.
Schematic structure of 2DEG β‐Ga2O3 MOSFETs and corresponding processing flow. Abstract This study utilizes a metalorganic chemical vapor deposition system to grow a β‐Ga2O3 epitaxial layer on a sapphire substrate and fabricate lateral β‐Ga2O3 metal‐oxide‐semiconductor field‐effect transistors (MOSFETs). To enhance the performance of the β‐Ga2O3 MOSFET,
Sheng‐Ti Chung, Catherine Langpoklakpam, Yicong Dong, Yi‐Kai Hsiao, Shaloo Rakheja, Hao‐Chung Kuo, Dong‐Sing Wuu, Kenneth Järrendahl, Ching‐Lien Hsiao, Edmund Dobročka, Milan Ťapajna, Filip Gucmann, Ray‐Hua Horng   +12 more
wiley   +1 more source

Co-occurrence of familial cerebral cavernous malformations and tuberculous meningitis. [PDF]

Oxf Med Case Reports
Pedregosa Ii BC, Gan HH, Escabillas CG, Navarro JC.   +3 more
europepmc   +1 more source

Advances in MXene‐Based Electronics via Surface and Structural Redesigning and Beyond

Advanced Electronic Materials, EarlyView.
Herein, various MXenes surface and structural engineering strategies such as termination control, doping, interlayer design, and heterostructures are reviewed for advanced electronics applications. We discuss how these approaches optimize conductivity, work function, and device integration, enabling breakthroughs in transistors, photodetectors, and ...
Adnan Younis, Edvin Idrisov, Saleh Thaker, Fathalla Hamed, El Hadi Sadki, Muhammad Zafar Iqbal, Tariq Mahmood, Babar Shabbir, Qiaoliang Bao   +8 more
wiley   +1 more source

Tunable Electronic Bandgaps and Optical and Magnetic Properties in Antiferromagnetic MPS₃/GaN (M = Mn, Fe, and Ni) Heterobilayers. [PDF]

Nanomaterials (Basel)
Tian S, Han L, Zhang L, Zhang K, Jiang M, Wang J, Lan S, Lv X, Zhang Y, Lu A, Huang Y, Xing H, Chen X.   +12 more
europepmc   +1 more source

Oxygen Defects and Instability in Very Thin a‐IGZO TFTs

Advanced Electronic Materials, EarlyView.
Based on the new finding of two types of defect−defect interactions, donor−donor and donor−acceptor interaction, the authors identify oxygen‐related acceptors in amorphous oxide semiconductors (AOS) as the origin of an extraordinarily large positive‐bias‐stress (PBS) instability when TFT channel becomes thin.
Hanjun Cho, Masatake Tsuji, Shigenori Ueda, Junghwan Kim, Hideo Hosono   +4 more
wiley   +1 more source