Results 241 to 250 of about 1,056,535 (282)

p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si

IEEE Electron Device Letters, 2019
In this letter, we demonstrate a recessed-gate p-channel MISFET using a p-GaN (70 nm)/Al 0.2Ga0.8N (15 nm)/GaN heterostructure grown by metalorganic chemical vapor deposition (MOCVD) on a Si substrate. A major benefit of such epi-structure is that it contains both a 2-dimensional electron gas (2-DEG) and a 2-dimensional hole gas (2-DHG), hence making ...
Chowdhury, Nadim, Lemettinen, Jori, Xie, Qingyun, Zhang, Yuhao, Rajput, Nitul S., Xiang, Peng, Cheng, Kai, Suihkonen, Sami, Then, Han Wui, Palacios, Tomas   +10 more
openaire   +3 more sources

Electrochemical lift-off of GaN films for GaN-on-GaN technology

Journal of Physics D: Applied Physics, 2023
Abstract Lifting off the native GaN substrate is an essential step in the fabrication of high-performance devices. In this study, we report a method to separate GaN thin films from GaN substrate through electrochemical (EC) lateral etching.
Yuzhen Liu, Meixin Feng, Shanshan Yang, Chuanjie Li, Yayu Dai, Shuming Zhang, Jianxun Liu, Jing Jin, Qian Sun, Hui Yang   +9 more
openaire   +1 more source

Single-crystal GaN/Gd2O3/GaN heterostructure

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2002
Heteroepitaxy of single-crystal Gd2O3 on GaN (with a wurtzite hexagonal close-packed (hcp) structure) and single-crystal GaN on Gd2O3 was achieved. In situ reflection high-energy electron diffraction reveals a sixfold symmetry in the in-plane epitaxy of the rare earth oxide on GaN and also in the overgrowth of GaN on the oxide.
M. Hong, J. Kwo, S. N. G. Chu, J. P. Mannaerts, A. R. Kortan, H. M. Ng, A. Y. Cho, K. A. Anselm, C. M. Lee, J. I. Chyi   +9 more
openaire   +1 more source

Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN

Japanese Journal of Applied Physics, 2003
GaN/Alumina/GaN structures were fabricated to reduce dislocation density in GaN. Alumina films were deposited on GaN templates by electron cyclotron resonance plasma sputtering. GaN was regrown on the alumina films by metalorganic vapor phase epitaxy.
Masanobu Hiroki, Kazuhide Kumakura, Toshiki Makimato, Naoki Kobayashi, Takashi Kobayashi   +4 more
openaire   +1 more source

High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN

Applied Physics Letters, 1996
Platinum (Pt) and palladium (Pd) Schottky diodes on n-type GaN grown by metalorganic chemical vapor deposition were achieved and investigated. Aluminum was used for ohmic contacts. Barrier heights were determined to be as high as ΦB=1.13 eV by the current–voltage (I–V) method and ΦB=1.27 eV by the capacitance–voltage (C–V) method for the Pt/GaN diode ...
Lei Wang, M. I. Nathan, T-H. Lim, M. A. Khan, Q. Chen   +4 more
openaire   +1 more source

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2009
( ), , CNRS (Centre National de la Researche Scientifique, )
openaire   +1 more source

GaN-on-Diamond : The Next GaN

Microwave journal Internation. ed., 2014
Engineers in the defense community have long sought to replace the bulky and heavy traveling wave tubes (TWT) used in high power systems such as radar, communications satellite and electronic warfare (EW) with compact, lightweight, cheaper and more efficient semiconductor components. Diamond is also an excellent electrical insulator - a property needed
Ejeckam, F., Francis, D., Faili, F., Lowe, F., Wilman, J., Mollart, T., Dodson, J., Twitchen, D., Bolliger, B., Babić, Dubravko   +9 more
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GaN Growth Using GaN Buffer Layer

Japanese Journal of Applied Physics, 1991
High-quality gallium nitride (GaN) film was obtained for the first time using a GaN buffer layer on a sapphire substrate. An optically flat and smooth surface was obtained over a two-inch sapphire substrate. Hall measurement was performed on GaN films grown with a GaN buffer layer as a function of the thickness of the GaN buffer layer. For the GaN
openaire   +1 more source

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2020
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openaire   +1 more source

Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design

Advanced Materials, 2021
Jianbo Liang, Yasuo Shimizu, Yutaka Ohno
exaly