Results 261 to 270 of about 276,670 (296)

GANs, GANs, and More GANs

2021
Generative modeling has been around for a few decades, but much of the field didn’t start to recognize itself without the discovery of the generative adversarial network (GAN). There is some debate on when GANs were discovered and by whom. One thing is for certain: Ian Goodfellow and his colleagues from the University of Montreal in 2014 deserve a good
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GANs Unplugged

Proceedings of the AAAI Conference on Artificial Intelligence, 2021
With the influx of deepfake and style transfer technology in today's news and social media, everyone is told that these applications are powered by artificial intelligence and deep learning, but too often the explanation of how it works goes no further.
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Electrochemical lift-off of GaN films for GaN-on-GaN technology

Journal of Physics D: Applied Physics, 2023
Abstract Lifting off the native GaN substrate is an essential step in the fabrication of high-performance devices. In this study, we report a method to separate GaN thin films from GaN substrate through electrochemical (EC) lateral etching.
Yuzhen Liu, Meixin Feng, Shanshan Yang, Chuanjie Li, Yayu Dai, Shuming Zhang, Jianxun Liu, Jing Jin, Qian Sun, Hui Yang   +9 more
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GaN-on-Diamond : The Next GaN

Microwave journal Internation. ed., 2014
Engineers in the defense community have long sought to replace the bulky and heavy traveling wave tubes (TWT) used in high power systems such as radar, communications satellite and electronic warfare (EW) with compact, lightweight, cheaper and more efficient semiconductor components. Diamond is also an excellent electrical insulator - a property needed
Ejeckam, F., Francis, D., Faili, F., Lowe, F., Wilman, J., Mollart, T., Dodson, J., Twitchen, D., Bolliger, B., Babić, Dubravko   +9 more
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Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN

Japanese Journal of Applied Physics, 2003
GaN/Alumina/GaN structures were fabricated to reduce dislocation density in GaN. Alumina films were deposited on GaN templates by electron cyclotron resonance plasma sputtering. GaN was regrown on the alumina films by metalorganic vapor phase epitaxy.
Masanobu Hiroki, Kazuhide Kumakura, Toshiki Makimato, Naoki Kobayashi, Takashi Kobayashi   +4 more
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SE-GAN: A Swap Ensemble GAN Framework

2019 International Joint Conference on Neural Networks (IJCNN), 2019
In recent years, Generative adversial network(GAN) becomes prevalent in the research and was applied in various fields. Though GAN attracting great attention undoubtedly, it was still blamed for the difficulty of training. Training a GAN is very likely to get into undesirable results such as gradient vanishing, gradient explosion, model collapse.
Licheng Shen, Yan Yang 0001
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GAN-in-GAN for Monaural Speech Enhancement

IEEE Signal Processing Letters, 2023
Yicun Duan, Jianfeng Ren, Heng Yu 0001, Xudong Jiang 0001   +3 more
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p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si

IEEE Electron Device Letters, 2019
In this letter, we demonstrate a recessed-gate p-channel MISFET using a p-GaN (70 nm)/Al 0.2Ga0.8N (15 nm)/GaN heterostructure grown by metalorganic chemical vapor deposition (MOCVD) on a Si substrate. A major benefit of such epi-structure is that it contains both a 2-dimensional electron gas (2-DEG) and a 2-dimensional hole gas (2-DHG), hence making ...
Chowdhury, Nadim, Lemettinen, Jori, Xie, Qingyun, Zhang, Yuhao, Rajput, Nitul S., Xiang, Peng, Cheng, Kai, Suihkonen, Sami, Then, Han Wui, Palacios, Tomas   +10 more
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Cluster with GANs

Computer Vision and Image Understanding, 2022
Yuri Feigin, Hedva Spitzer, Raja Giryes
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