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Conception d'un modulateur de puissance large-bande à deux étages en technologie GaN
, 2017 Abhijeet Dasgupta +5 more
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Reciprocal GAN Through Characteristic Functions (RCF-GAN)
IEEE Transactions on Pattern Analysis and Machine Intelligence, 2023The integral probability metric (IPM) equips generative adversarial nets (GANs) with the necessary theoretical support for comparing statistical moments in an embedded domain of the critic, while stabilising their training and mitigating the mode collapse issues.
Shengxi Li +3 more
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2021
Generative modeling has been around for a few decades, but much of the field didn’t start to recognize itself without the discovery of the generative adversarial network (GAN). There is some debate on when GANs were discovered and by whom. One thing is for certain: Ian Goodfellow and his colleagues from the University of Montreal in 2014 deserve a good
openaire +1 more source
Generative modeling has been around for a few decades, but much of the field didn’t start to recognize itself without the discovery of the generative adversarial network (GAN). There is some debate on when GANs were discovered and by whom. One thing is for certain: Ian Goodfellow and his colleagues from the University of Montreal in 2014 deserve a good
openaire +1 more source
p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si
IEEE Electron Device Letters, 2019In this letter, we demonstrate a recessed-gate p-channel MISFET using a p-GaN (70 nm)/Al 0.2Ga0.8N (15 nm)/GaN heterostructure grown by metalorganic chemical vapor deposition (MOCVD) on a Si substrate. A major benefit of such epi-structure is that it contains both a 2-dimensional electron gas (2-DEG) and a 2-dimensional hole gas (2-DHG), hence making ...
Chowdhury, Nadim +10 more
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Electrochemical lift-off of GaN films for GaN-on-GaN technology
Journal of Physics D: Applied Physics, 2023Abstract Lifting off the native GaN substrate is an essential step in the fabrication of high-performance devices. In this study, we report a method to separate GaN thin films from GaN substrate through electrochemical (EC) lateral etching.
Yuzhen Liu +9 more
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Single-crystal GaN/Gd2O3/GaN heterostructure
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2002Heteroepitaxy of single-crystal Gd2O3 on GaN (with a wurtzite hexagonal close-packed (hcp) structure) and single-crystal GaN on Gd2O3 was achieved. In situ reflection high-energy electron diffraction reveals a sixfold symmetry in the in-plane epitaxy of the rare earth oxide on GaN and also in the overgrowth of GaN on the oxide.
M. Hong +9 more
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Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN
Japanese Journal of Applied Physics, 2003GaN/Alumina/GaN structures were fabricated to reduce dislocation density in GaN. Alumina films were deposited on GaN templates by electron cyclotron resonance plasma sputtering. GaN was regrown on the alumina films by metalorganic vapor phase epitaxy.
Masanobu Hiroki +4 more
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