Results 41 to 50 of about 1,555,030 (266)
ABSTRACT Cup‐like nuclei are a distinctive morphological feature observed in certain cases of acute lymphoblastic leukemia (ALL). We provide evidence that they characterize DUX4/ERG ALL independently of IKZF1 deletion and reveal marked mitochondrial accumulation in this ALL subset.
Chloé Arfeuille +9 more
wiley +1 more source
ABSTRACT Primary cutaneous anaplastic large cell lymphoma (pcALCL) is a rare pediatric CD30‐positive T‐cell lymphoproliferative disorder with an excellent prognosis, but its genomic drivers are poorly defined. We report three children with skin‐limited disease demonstrating striking molecular heterogeneity, including NPM::ALK, NUP214::FRK, and a novel ...
Shoshana Greenberger +7 more
wiley +1 more source
ABSTRACT Background Combined oral contraceptive (COC) use in obese adult women dramatically increases the relative risk of developing a pulmonary embolism (PE). The risk of a PE in obese adolescent females taking contraceptives is currently unknown. The purpose of this investigation was to determine the effect of body mass index (BMI) and contraceptive
John Puetz, Joanne Salas
wiley +1 more source
Comparative Study of Negative Capacitance Field-Effect Transistors with Different MOS Capacitances
We demonstrate the negative capacitance (NC) effect of HfZrOx-based field-effect transistors (FETs) in the experiments. Improved I DS, SS, and G m of NCFET have been achieved in comparison with control metal oxide semiconductor (MOS) FET.
Jing Li +4 more
doaj +1 more source
ABSTRACT Background Fertility preservation (FP) is increasingly integrated into the care of pediatric patients exposed to gonadotoxic therapy or conditioning for hematopoietic stem cell transplantation (HSCT), yet perioperative data in infants and toddlers remain scarce.
Kerstin Saalabian +13 more
wiley +1 more source
Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf1−x Zr x O2
Germanium (Ge) negative capacitance field-effect transistors (NCFETs) with various Zr compositions in Hf1−x Zr x O2 (x = 0.33, 0.48, and 0.67) are fabricated and characterized. For each Zr composition, the NCFET exhibits the sudden drop in some points of
Yue Peng +4 more
doaj +1 more source
In this paper, we carried out a comprehensive study and optimization of implementing p-NiO in the β-Ga2O3 based diodes, including Schottky barrier diode (SBD) with p-NiO guard ring (GR), p-NiO/β-Ga2O3 heterojunction (HJ) barrier Schottky (HJBS) diode ...
Hong Zhou +7 more
doaj +1 more source
On the number of gapped repeats with arbitrary gap [PDF]
17 pages, 2 figures.
openaire +2 more sources
ABSTRACT Background Central nervous system (CNS) neuroblastoma, FOXR2‐activated, is a recently recognized entity in the WHO CNS5 classification, defined by activation of the FOXR2 transcription factor and unique histopathological features. This review synthesizes available literature and pooled clinical data, providing insight into demographics ...
Sudarshawn Damodharan +1 more
wiley +1 more source
Analytical Model for the Channel Maximum Temperature in Ga2O3 MOSFETs
In this work, we proposed an accurate analytical model for the estimation of the channel maximum temperature of Ga2O3 MOSFETs with native or high-thermal-conductivity substrates.
Xiaole Jia +4 more
doaj +1 more source

