Results 141 to 150 of about 51,330 (256)
Formulation and characterization of surfactants with antibacterial and corrosion-inhibiting properties for enhancing shale gas drainage and production. [PDF]
Li J +6 more
europepmc +1 more source
Magnetoelectric Multiferroics for the Next‐Generation Ultralow‐Power Electronics
Magnetoelectric coupling provides a unifying route from electric‐field control of magnetic order to non‐volatile MeRAM, MESO logic, and emerging antiferromagnetic and magnonic devices. By connecting switching physics with device benchmarks, material platforms, and integration strategies, distinctive technological opportunities are identified alongside ...
Yang Liu +13 more
wiley +1 more source
Study on key grouting blocking parameters of gas drainage boreholes in soft coal seams. [PDF]
Bao R, Zhou F, Shang H, Song S.
europepmc +1 more source
A straightforward method is introduced to produce ion‐gel films with very low surface roughness by employing a solution‐shearing coating process. These ion‐gel films permit the growth of crystalline thin films of various small molecule organic semiconductor molecules directly on top of the ion‐gel layer, thereby enabling “inverted” small molecule ...
Jonathan Perez Andrade +10 more
wiley +1 more source
Improvement of Thick Coal Seam Gas Drainage Efficiency Using Highly Pressurized Multidischarge CO2 Gas Fracturing Technique. [PDF]
Guo B +4 more
europepmc +1 more source
Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao +15 more
wiley +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Silicon Nitride Resistive Memories
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
This review summarizes the developments in field‐effect transistor (FET)‐based dual‐mode sensor platforms and what can be learned from them. It identifies charge as a crucial factor in biomolecular interactions at interfaces, outlines the challenges of hybrid systems, and highlights their benefits.
Roger Hasler +4 more
wiley +1 more source
Solution blending of zwitterionic polymers with PEDOT:PSS provides a simple route to OECT materials with enhanced threshold voltage stability in biologically relevant environments. The polymer sequence alters outer‐domain structure within the preserved PEDOT:PSS framework, thereby tuning charge transport.
Wakana Takahashi +3 more
wiley +1 more source

