Results 191 to 200 of about 50,186 (313)

Online Detection of Hydrogen Fluoride under Corona Discharge in Gas-Insulated Switchgear Based on Photoacoustic Spectroscopy. [PDF]

Sensors (Basel)
Wan L, Zhao X, Li K.
europepmc   +1 more source

Improved Direct Ink Writing of Liquid Metal Foams via Liquid Additives

Advanced Electronic Materials, EarlyView.
The ability to pattern liquid metal is useful for making soft electrical and thermal devices. Dispensing liquid metal from a nozzle naturally results in the formation of spheroidal droplets, making direct‐write printing challenging. Liquid metal foams containing pockets of air can extrude as filaments, albeit inconsistently.
Febby Krisnadi, Tushar Sakorikar, Man Hou Vong, Michael D. Dickey   +3 more
wiley   +1 more source

Medium-Voltage AC Cable Joints: A Review of Testing Methods, Standards, and Emerging Trends. [PDF]

Sensors (Basel)
Mingotti A, Babaei F, Tinarelli R, Peretto L.   +3 more
europepmc   +1 more source

Charge Injection and Transport in an Isoindigo‐Based Polymer Transistor

Advanced Electronic Materials, EarlyView.
This study presents the charge injection and transport properties of field‐effect transistors based on an isoindigo‐bithiophene donor‐acceptor polymer semiconductor contacted with thiolated self‐assembled monolayer (SAM)‐functionalized electrodes. Temperature‐dependent contact characteristics are measured and simulated.
Zuchong Yang, Daniele Zucchelli, Melissa Berteau‐Rainville, Qi Wang, Sydney Mikulin, Ingo Salzmann, Steffen Duhm, Fabrizio Torricelli, Emanuele Orgiu   +8 more
wiley   +1 more source

Research on Underwater Constant High-Voltage DC Switching Technology for MCSEM. [PDF]

Sensors (Basel)
Ren Z, Wang M, Luo X, Wang C, Chen T.
europepmc   +1 more source

Liquid Metals in Radio Frequency Applications: A Review of Physics, Manufacturing, and Emerging Technologies

Advanced Electronic Materials, EarlyView.
This paper reviews the physics of liquid metals in RF devices, including the influence of mechanical strain on resonance as well as fabrication methods and strategies for designing tunable and strain‐tolerant inductors, capacitors, and antennas.
Md Saifur Rahman, William J. Scheideler
wiley   +1 more source

A cryogenic Paul trap for probing the nuclear isomeric excited state 229 m Th 3 + . [PDF]

Eur Phys J D At Mol Opt Phys
Moritz D, Scharl K, Wiesinger M, Holthoff G, Teschler T, Hussain MI, Crespo López-Urrutia JR, Dickel T, Ding S, Düllmann CE, Hudson ER, Kraemer S, Löbell L, Mokry C, Runke J, Seiferle B, von der Wense L, Zacherl F, Thirolf PG.   +18 more
europepmc   +1 more source

In‐Operando 4D‐STEM and STEM‐EBIC Imaging of Electric Fields and Charge Carrier Behavior in Biased Silicon p–n Junctions

Advanced Electronic Materials, EarlyView.
This work presents a study of how 4D‐STEM centre of mass measurements and STEM‐EBIC can be used to map the positions, directions, and strengths of electric fields in semiconductor devices. The contrast mechanisms of both techniques are tested and compared with simulations to build a robust analysis of an in situ device in the electron microscope ...
Eoin Moynihan, Yining Xie, David Cooper, Grigore Moldovan, Richard Beanland, Ana Sanchez   +5 more
wiley   +1 more source

Frequency-doubled chirped-pulse dual-comb generation in the near-UV: combined vs separated beam investigations of Rb atoms and NO₂ near 420 nm. [PDF]

Sci Rep
Stroud JR, Plusquellic DF.
europepmc   +1 more source

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong, Taejun Ha, Sangwook Jung, Wontae Jeong, Yoonyoung Chung   +4 more
wiley   +1 more source