Results 191 to 200 of about 4,822,566 (311)

Dual Comb Spectrometer for the Determination of Stable Isotopic Ratios of Atmospheric CO₂ with Sub-Permille Precision at Atmospheric Pressure. [PDF]

Anal Chem
Goldschmidt J, Brugger N, Nitzsche L, Nitzsche P, Dinc C, Weber C, Breunig I, Schmitt K, Kühnemann F, Wöllenstein J.   +9 more
europepmc   +1 more source

Nonmonotonic Enhancement of Electro‐Optic Properties of Wurtzite AlN Thin Films by Sc Doping

Advanced Electronic Materials, EarlyView.
EO coefficient, rc, for Sc‐AlN thin films in comparison with that for Mg ZnO thin films (left). Calculated electric field intensity of the fundamental mode supported by the active area that includes Sc‐AlN (right). ABSTRACT Wurtzite ferroelectrics, such as Sc‐doped AlN, have recently attracted considerable attention for their potential in realizing ...
K. Abe, X. Yuan, K. Okamoto, X. Liu, C. Wang, T. Wu, H. Funakubo, S. Kondo, T. Nagasaki, P. Ma, A. Emboras, T. Yamada   +11 more
wiley   +1 more source

Research on aging behaviors of insulating silicone oil for cable terminals based on chromatographic and spectroscopic analysis. [PDF]

PLoS One
Zhang W, Chen J, Li C, Cao J, Tan X, Gao C.   +5 more
europepmc   +1 more source

Influence of Top Electrode Metal on Resistive Switching in Multilayer MOCVD MoS2 Memristors

Advanced Electronic Materials, EarlyView.
MoS2 memristors typically use evaporated noble metal electrodes. This study compares Pd, Ni, and Al electrodes and sputtered versus evaporated deposition. Pd is passive, while Ni damages MoS2, yielding poor switching. Sputtered Al enables reproducible ECM‐type switching with 95% yield, whereas evaporated Al forms an interfacial oxide that suppresses ...
Dennis Braun, Jing Liu, Vasilis A. Maroufidis, Hleb Fiadziushkin, Lukas Völkel, Jimin Lee, Sofía Cruces, Annika Grundmann, Ke Ran, Thorsten Wahlbrink, Holger Kalisch, Andrei Vescan, Joachim Mayer, Michael Heuken, Alwin Daus, Max C. Lemme   +15 more
wiley   +1 more source

Freely controllable single-optical-frequency comb for highly sensitive cavity ring-down spectroscopy. [PDF]

Sci Rep
Nishizawa N, Kitajima S, Liu N, Terabayashi R, Hashimoto D, Abe H, Tomita H.   +6 more
europepmc   +1 more source

Advancing Fruit Bioimpedance Monitoring With Sustainable, Soft, And Bio‐Based Electrodes Beyond ECG

Advanced Electronic Materials, EarlyView.
Electrical impedance spectroscopy enables non‐destructive fruit quality monitoring, but conventional ECG and needle electrodes compromise signal stability, fruit physiology, and sustainability. This perspective highlights the transition toward soft, biocompatible, and biodegradable electrode interfaces based on natural substrates, bio‐derived ...
Sundus Riaz, Ahmed Rasheed, Angelo Zanella, Almudena Rivadeneyra, Paolo Lugli, Luisa Petti, Pietro Ibba   +6 more
wiley   +1 more source

Engineering high environmental robustness in solar evaporation to bridge the lab-to-field performance gap. [PDF]

Nat Commun
Wang CT, Lin C, Xu K, Liu Y, Lao Z, Cao J, Liu B, Baqais A, Bin Bandar K, Aldrees S, Alhussaini MA, Leu SY, Ghaffour N, Gan Q, Wang W, Wang P.   +15 more
europepmc   +1 more source

Low‐Field Giant Dielectric Tunability by Polaron‐Mediated Interfacial Polarization in Pulsed‐Laser‐Deposited‐Nanocrystalline/Amorphous Composite BaTiO3 Thin Films

Advanced Electronic Materials, EarlyView.
Comparison of tunability efficiency between vacuum‐deposited PLD‐BTO films grown at Td = 550°C in the present study and representative previous reports. ABSTRACT Electrically tunable dielectric thin films are essential components for next‐generation low‐voltage electronic devices.
Shinya Kondo, Taichi Murakami, Loick Pichon, Joël Leblanc‐Lavoie, Takashi Teranishi, Akira Kishimoto, Tomoaki Yamada, My Ali El Khakani   +7 more
wiley   +1 more source

Numerical Simulation of Streaming Discharge Characteristics of Free Metal Particles in SF₆/CF₄ Gas Mixtures Under Highly Heterogeneous Electric Field. [PDF]

Sensors (Basel)
Qi B, Wang H, Liu C, Teng F, Yu D, Liang Y, Wang F.   +6 more
europepmc   +1 more source

Effects of Doping, Disorder, and Compensation on Electron Conduction in Si‐Doped k‐Ga2O3 Close to the Metal‐to‐Insulator Transition

Advanced Electronic Materials, EarlyView.
Self‐compensation effects attributed to doping‐dependent shift‐defects at APBs Validation of Hall data for VRH transport near the MIT Persistence of VRH transport for any SiH4 flow in Si‐doped κ‐Ga2O3 due to high compensation coupling transport and EPR data as strategy to study electronic properties and doping T‐dependence of transport data agrees with
Antonella Parisini, Hans Jürgen von Bardeleben, Ildicò Cora, Zsolt Fogarassy, Paola Alippi, Vincenzo Fiorentini, Ian Vickridge, Piero Mazzolini, Alessio Bosio, Roberto Fornari   +9 more
wiley   +1 more source