Results 191 to 200 of about 7,907 (301)

Chemical Load-Induced Surface Nanocrystallization in Nitrided Martensitic Stainless Steel. [PDF]

Nanomaterials (Basel)
Yang X, Che H, Lei M.
europepmc   +1 more source

Recent Advances and Challenges in Ammonia‐Hydrogen Energy Conversion

Advanced Science, EarlyView.
This work summarizes the latest progress of various catalytic methods in ammonia‐hydrogen energy conversion. The challenges and outlook of ammonia‐hydrogen energy conversion system are also emphasized. This work expects to build a blueprint of renewable and efficient ammonia‐hydrogen energy conversion systems under mild conditions.
Menghao Lv, Runchao Qin, Jianshuo Chen, Kaiwen Yang, Jianwei Lu, Weiwei Lei, Yifu Yu   +6 more
wiley   +1 more source

Nitriding of Commercially Pure (CP) Titanium Grade 2 by the Active Screen Method. [PDF]

Materials (Basel)
Frączek T, Pilarska M, Skuza Z, Prusak R.   +3 more
europepmc   +1 more source

W‐N‐C Tandem Catalytic Centers Mediating Efficient Charge Transfer for the Enhanced Radical‐Path U(VI) Photoreduction

Advanced Science, EarlyView.
This work constructed a tandem W−N−C center to simultaneously achieve the regulation of reaction pathways and optimization of charge separation efficiency. The Lewis‐acidic W6+ sites activated O2 to generate O2−$O_2^ - $, with enhanced charge separation via electronic modulation, steering U(VI) reduction down an efficient radical pathway.
Zhiyao Wu, Jinhao Xu, Hao Fu, Yuxiang Deng, Nannan Wang, Wenhua Zhang, Peng Zhang, Zhiwei Huang, Zhenpeng Cui, Shu‐Xian Hu, Wangsuo Wu, Duoqiang Pan   +11 more
wiley   +1 more source

The Effect of Novel Support Layer by Titanium-Modified Plasma Nitriding on the Performance of AlCrN Coating. [PDF]

Materials (Basel)
Wu J, Zhao L, Ji J, Sun F, Hu J, Liu X, Wang D, An X, Liu X, Wei W.   +9 more
europepmc   +1 more source

Electrically Tunable Room‐Temperature Microwave Oscillations in GaN/AlN Triple‐Barrier Resonant Tunneling Diodes

Advanced Electronic Materials, EarlyView.
III‐nitride semiconductors have revolutionized optoelectronics, enabling transformative technologies such as high‐efficiency LEDs and lasers. However, their use in intersubband optoelectronics has remained limited. This work marks an important step forward by demonstrating highly coherent inter‐well resonant tunneling injection in III‐nitride ...
Jimy Encomendero, Naomi Pieczulewski, Eegene Chung, Vladimir Protasenko, David A. Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

Control of the Nitriding Process of AISI 52100 Steel in the NH₃/N₂ Atmosphere. [PDF]

Materials (Basel)
Michalski J, Frączek T, Prusak R, Dudek A, Kowalewska-Groszkowska M, Major M.   +5 more
europepmc   +1 more source

Uranium Doped Gallium Nitride Epitaxial Thin Films

Advanced Electronic Materials, EarlyView.
Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix, Sabin Regmi, Aaron G. Penders, Sohail Shah, Kevin D. Vallejo, Volodymyr B. Buturlim, Belief Rifore, Krzysztof Gofryk, Mukesh Bachhav, Nicholas J. Borys, Brelon J. May   +10 more
wiley   +1 more source

Surface Engineering and Coating Technologies for Corrosion and Tribocorrosion Resistance-Volume II. [PDF]

Materials (Basel)
Sun Y.
europepmc   +1 more source

Design, control and in situ visualization of gas nitriding processes. [PDF]

Sensors (Basel), 2010
Ratajski J, Olik R, Suszko T, Dobrodziej J, Michalski J.   +4 more
europepmc   +1 more source