Results 271 to 280 of about 523,548 (302)
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Effects of high-/spl kappa/ gate dielectric materials on metal and silicon gate workfunctions
IEEE Electron Device Letters, 2002Chenming Hu, Yee-Chia Yeo, P Ranade
exaly
FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
IEEE Transactions on Electron Devices, 2000Jeffrey Bokor +2 more
exaly
An adjustable work function technology using Mo gate for CMOS devices
IEEE Electron Device Letters, 2002Chenming Hu, P Ranade, Tsu-Jae King
exaly

