Results 201 to 210 of about 196,052 (239)

Supercompliant Lattice Boosts n‐type AgSbTe2 Thermoelectrics

open access: yesAdvanced Functional Materials, EarlyView.
The supercompliant lattice design enables the first realization of n‐type electrical transport in AgSbTe2 by overcoming intrinsic electron‐killer defects and exceeding the doping limits imposed by the conventional Hume–Rothery rule. Accordingly, the best performance n‐type Ag0.8Na0.3Sb0.6Bi0.4Te2 sample achieves a low κ of 0.27 W·m−1·K−1 that ...
Ruoyan Li   +15 more
wiley   +1 more source

Condensate droplet roaming on nanostructured superhydrophobic surfaces. [PDF]

open access: yesNat Commun
Lam CWE   +7 more
europepmc   +1 more source

Vanadium Doped Magnetic MoS2 Monolayers of Improved Electrical Conductivity as Spin‐Orbit Torque Layer

open access: yesAdvanced Functional Materials, EarlyView.
Electrically conductive and room temperature magnetic atomically thin (≈0.8 nm) vanadium doped MoS2 (V‐MoS2) is demonstrated for its spintronic applications. Here, the spin transport at the interface of permalloy (Py) and high spin‐orbit coupling V‐MoS2 magnetic monolayers is shown.
Krishna Rani Sahoo   +8 more
wiley   +1 more source

Topologically ordered time crystals. [PDF]

open access: yesNat Commun
Wahl TB, Han B, Béri B.
europepmc   +1 more source

Optical Control of Ferroelectric Imprint in BiFeO3

open access: yesAdvanced Functional Materials, EarlyView.
Above‐bandgap irradiation at room temperature enables on‐demand optical control of defect‐driven built‐in electric fields in BiFeO₃ thin films, fabricated via scalable, chemical spray pyrolysis. These fields, otherwise “frozen‐in,” can cause severe device degradation, including non‐switchable polarization, dead layers near interfaces, and polarization ...
Haoze Zhang   +8 more
wiley   +1 more source

Phase Engineering of a 1D van der Waals Thin Film

open access: yesAdvanced Functional Materials, EarlyView.
Explores the transformative potential of 1D van der Waals materials, focusing on the monoclinic‐to‐tetragonal phase transition in NbTe4, its atomic‐scale mechanisms, and significant metal‐insulator transition (MIT) behavior. Highlights advanced imaging insights and the applications of reversible phase transitions in memory devices, sensors, and ...
Yi Shuang, Daisuke Ando, Yuji Sutou
wiley   +1 more source

Spin-Peierls instability of the U(1) Dirac spin liquid. [PDF]

open access: yesNat Commun
Seifert UFP   +4 more
europepmc   +1 more source

Deterministic Writing of Field‐Free and Unipolar Spin‐Transfer Torque Magnetic Random‐Access Memory

open access: yesAdvanced Functional Materials, EarlyView.
Deterministic unipolar‐switching STT‐MRAM with field‐free operation is experimentally demonstrated. The device features a compact 4F2 cell architecture using a diode as the access device and a single magnetic tunneling junction. Unlike conventional bipolar switching STT‐MRAM requiring a three‐terminal access transistor in the array, this design offers ...
Ming‐Chun Hong   +22 more
wiley   +1 more source

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