Results 281 to 290 of about 1,176,606 (385)

Synergistic Effects of Entropy Tuning in Niobium‐Based Oxide Anode for Fast‐Charging Lithium‐Ion Batteries

open access: yesAdvanced Functional Materials, EarlyView.
An entropy‐tuned niobium‐based oxide (ETNO) anode for fast‐charging lithium‐ion batteries are presented, engineered via multi‐cation doping. The synergistic effects of entropy tuning result in excellent rate capability and long‐term durability under ultrafast charging conditions.
Yoojin Ahn   +6 more
wiley   +1 more source

Bright Monocompound Metal Halide Scintillator for Fast Neutron Radiography

open access: yesAdvanced Functional Materials, EarlyView.
Metal halide scintillator, tetraphenylphosphonium manganese bromide (TPP2MnBr4), provides a significant benefit for fast neutron imaging. A fourfold increase in efficiency over traditional zinc sulfide screens is achieved by efficiently utilizing neutron interactions within its homogeneous structure.
Aditya Bhardwaj   +13 more
wiley   +1 more source

Degenerate domain walls in supersymmetric theories. [PDF]

open access: yesProc Natl Acad Sci U S A
Chen S, Ievlev E, Shifman M.
europepmc   +1 more source

Bogoliubov condensation of gluons and spontaneous gauge symmetry breaking in QCD [PDF]

open access: green, 1995
V. N. Pervushin   +5 more
openalex   +1 more source

Gated PN Junction in Ambipolar MoS2 for Superior Self‐Powered Photodetection

open access: yesAdvanced Functional Materials, EarlyView.
A high‐quality gated pn junction based on ambipolar molybdenum disulfide (MoS2) is demonstrated by employing a partial‐gate structure and a Pt bottom contact that forms a semi‐van der Waals interface, facilitating efficient hole injection into the channel.
Jaeha Hwang   +12 more
wiley   +1 more source

Electrically Binary and Ternary Convertible CMOS Inverter and Logic Gate Using Complementary Field‐Effect Transistors Based on Vertically Stacked MoS2/WSe2 n‐/p‐ Field‐Effect Transistors

open access: yesAdvanced Functional Materials, EarlyView.
In this work, a reconfigurable T‐CMOS inverter based on vertically stacked MoS2 and WSe2 MOSFETs with a gate‐tunable MoS2 resistor, enabling stable ternary logic, is demonstrated. The T‐CMOS inverter supports electrical switching between ternary and binary modes and is further extended to implement ternary NAND (NMIN) and NOR (NMAX) logic gates ...
Changwook Lee   +5 more
wiley   +1 more source

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