Stable Gaussian process tracking control of antagonistic variable stiffness actuators. [PDF]
Sci RepZou Z, Li W, Yang C, Pan Y.
europepmc +1 more source
Excursions of Stationary Gaussian Processes above High Moving Barriers [PDF]
, 1973 Simeon M. Berman
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Advanced Functional Materials, EarlyView.Halide diffusion limits the stability of hybrid halide perovskites for optoelectronic applications and thus needs to be quantified. This study presents an effective interdiffusion model to obtain time‐dependent diffusion coefficients for I− and Br− diffusion from in situ X‐ray diffraction data during the formation of a solid solution MAPbIxBr3‐x from ...
Tobias Siegert +6 more
wiley +1 more source
Step-stress accelerated degradation test for Inverse Gaussian process based on M-optimality criterion. [PDF]
Sci RepTang J, Zhou H.
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Fast‐Responding O2 Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76)
Advanced Functional Materials, EarlyView.Luminescent MOF‐76 materials based on Eu(III) and mixed Eu(III)/Y(III) show rapid and reversible changes in emission intensity in response to O2 with very short response times. The effect is based on triplet quenching of the linker ligands that act as photosensitizers. Average emission lifetimes of a few milliseconds turn out to be mostly unaffected by
Zhenyu Zhao +5 more
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Evaluation of Matrix Effects in SIMS Using Gaussian Process Regression: The Case of Olivine Mg Isotope Microanalysis. [PDF]
Rapid Commun Mass SpectromItano K +5 more
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The Law of the Iterated Logarithm on Arbitrary Sequences for Stationary Gaussian Processes and Brownian Motion [PDF]
, 1977 Clifford Qualls
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Stochastically Generated Digital Twins of 3D Solid‐State Electrolyte Architecture
Advanced Functional Materials, EarlyView.Digital Twins of random porous tape‐cast solid‐state battery architectures across µm to mm feature sizes from FIB‐SEM to X‐Ray µCT, respectively. Abstract Solid‐state lithium batteries (SSBs) have the potential to overcome conventional Li‐ion batteries in performance and safety.
Jonathan O'Neill +3 more
wiley +1 more source
Some remarks on the equivalence of Gaussian processes [PDF]
, 1975 Antonio F. Gualtierotti +1 more
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Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System
Advanced Functional Materials, EarlyView.We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang +6 more
wiley +1 more source