Results 151 to 160 of about 1,270,477 (284)

Low threading-dislocation-density Ge film on Si grown on a pitting Ge buffer layer

open access: yes, 2008
A Ge layer with a pitting surface can be obtained when the growth temperature is lowered to 290 degrees C. On the low temperature Ge buffer layer with pits, high quality Ge layer was grown at 600 degrees C with a threading dislocation density of similar ...
Xue HY   +10 more
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Entropy‐Driven Design of Low‐Melting‐Point Alloys via Compositionally Complex Strategy

open access: yesAdvanced Engineering Materials, EarlyView.
Conventional low‐melting‐point alloys (LMPAs) are limited by a narrow compositional space and inherent property trade‐offs. This review presents an entropy‐driven design strategy that overcomes these limitations, ushering in a new class of low‐melting‐point compositionally complex alloys (LMCCAs).
Yinghui Shang   +6 more
wiley   +1 more source

Investigation of Ge-Si atomic interdiffusion in Ge nano-dots multilayer structure by double crystal X-ray diffraction

open access: yes, 2007
The fluctuations of the strained layer in a superlattice or quantum well can broaden the width of satellite peaks in double crystal X-ray diffraction (DCXRD) pattern.
Zhao L (Zhao Lei)   +4 more
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From Food to Power: Hydrogel Thermoelectrics for Ingestible Electronics

open access: yesAdvanced Functional Materials, EarlyView.
We introduce a fully edible thermoelectric–electrochromic platform that harvests heat from food and converts it into a visible color change. N‐type and p‐type hydrogel thermoelectric generators connected in series power anthocyanin‐based electrochromic displays, demonstrating the feasibility of safe, biodegradable, ingestible systems for on‐food ...
Antonia Georgopoulou   +3 more
wiley   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Chuan shang ge wu biao yan

open access: yes, 2015
1. 山峽風景 -- 2. 過運河 -- 3. 沿岸風景 -- 4. 春光美 : 女聲演唱 -- 5. 跳舞 -- 6. 流行歌表演.86. VIII, 山峽 -- 86. VIII, 船上歌舞表演.Detailed contents in vernacular field only.86. VIII, Shan xia -- 86.

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Disentangling Bulk and Surface Contributions to Charge and Discharge Fading in High‐Voltage LiCoO2

open access: yesAdvanced Functional Materials, EarlyView.
High‐voltage operation of LiCoO2 accelerates capacity fading through bulk and surface degradation. By introducing a LiTaO3 coating to selectively suppress surface degradation, bulk and surface contributions to charge and discharge fading are decoupled.
Hyungjoon Moon   +6 more
wiley   +1 more source

Coordinated Architectural and Chemical Reinforcement in the Crushing Mandible of a Soldier Termite

open access: yesAdvanced Functional Materials, EarlyView.
The crushing mandible of a soldier termite withstands substantial biting loads despite lacking mineral. Its cuticle is partitioned: convex teeth pair hardness and zinc enrichment with aligned chitin fibers for contact durability, while stiffer concave regions between teeth carry bending loads.
Andrew Tran Nguyen   +16 more
wiley   +1 more source

Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy

open access: yes, 1997
Ge composition dependence on the Ge cell temperature has been studied during the growth of Si1-xGex by disilane and solid Ge molecular beam epitaxy at a substrate temperature of 500 degrees C.
Liu JP   +5 more
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