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Growth and applications of GeSn-related group-IV semiconductor materials. [PDF]
Zaima S +5 more
europepmc +1 more source
Cation Distribution and Anion Transport in the La3Ga5-xGe1+xO14+0.5x Langasite Structure. [PDF]
Corti L +6 more
europepmc +1 more source
Validation of the Chinese version of the Contrast Avoidance Questionnaires. [PDF]
Zhang J +4 more
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Semiconductor Science and Technology, 2018
We examined the formation of Ni(Ge1−xSnx)/n+-Ge1−xSnx contacts with Sb- and P-doped Ge1−xSnx epitaxial layers with various electron concentrations and investigated the crystalline structure and contact resistivity.
Shigeaki Zaima +2 more
exaly +2 more sources
We examined the formation of Ni(Ge1−xSnx)/n+-Ge1−xSnx contacts with Sb- and P-doped Ge1−xSnx epitaxial layers with various electron concentrations and investigated the crystalline structure and contact resistivity.
Shigeaki Zaima +2 more
exaly +2 more sources
Effect of Bias on Content of GeC in Ge 1− x C x Films
Chinese Physics Letters, 2007Zhan Chang-Yong +2 more
exaly +3 more sources
Formation of Ni(Ge1−xSnx) layers with solid-phase reaction in Ni/Ge1−xSnx/Ge systems
Solid-State Electronics, 2011André Vantomme +2 more
exaly +2 more sources
Metal-enhanced Ge1−xSnx alloy film growth on glass substrates using a biaxial CaF2 buffer layer
CrystEngComm, 2014Gwo-Ching Wang
exaly +2 more sources
Analysis of the Ge1−xCx films deposited by MFMST
Applied Surface Science, 2007N K Huang
exaly +2 more sources
Advances in Materials, 2021
Owing to high intrinsic figure‐of‐merit implemented by multi‐band valleytronics, GeTe‐based thermoelectric materials are promising for medium‐temperature applications.
Meng Li +9 more
semanticscholar +1 more source
Owing to high intrinsic figure‐of‐merit implemented by multi‐band valleytronics, GeTe‐based thermoelectric materials are promising for medium‐temperature applications.
Meng Li +9 more
semanticscholar +1 more source

