Results 131 to 140 of about 567,272 (177)

Growth and applications of GeSn-related group-IV semiconductor materials. [PDF]

open access: yesSci Technol Adv Mater, 2015
Zaima S   +5 more
europepmc   +1 more source

Cation Distribution and Anion Transport in the La3Ga5-xGe1+xO14+0.5x Langasite Structure. [PDF]

open access: yesJ Am Chem Soc
Corti L   +6 more
europepmc   +1 more source

Validation of the Chinese version of the Contrast Avoidance Questionnaires. [PDF]

open access: yesFront Psychol
Zhang J   +4 more
europepmc   +1 more source
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Formation of ultra-low resistance contact with nickel stanogermanide/heavily doped n + -Ge 1− x Sn x structure

Semiconductor Science and Technology, 2018
We examined the formation of Ni(Ge1−xSnx)/n+-Ge1−xSnx contacts with Sb- and P-doped Ge1−xSnx epitaxial layers with various electron concentrations and investigated the crystalline structure and contact resistivity.
Shigeaki Zaima   +2 more
exaly   +2 more sources

Effect of Bias on Content of GeC in Ge 1− x C x Films

Chinese Physics Letters, 2007
Zhan Chang-Yong   +2 more
exaly   +3 more sources

Formation of Ni(Ge1−xSnx) layers with solid-phase reaction in Ni/Ge1−xSnx/Ge systems

Solid-State Electronics, 2011
André Vantomme   +2 more
exaly   +2 more sources

Optimizing Electronic Quality Factor toward High‐Performance Ge1−x−yTaxSbyTe Thermoelectrics: The Role of Transition Metal Doping

Advances in Materials, 2021
Owing to high intrinsic figure‐of‐merit implemented by multi‐band valleytronics, GeTe‐based thermoelectric materials are promising for medium‐temperature applications.
Meng Li   +9 more
semanticscholar   +1 more source

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