Results 141 to 150 of about 567,272 (177)

Triggering the Phase Conversion of GeP from Monoclinic to Cubic by Zn Substitution toward a High‐Rate Ge1−xZnxP Solid Solution Anode for Li‐Ion Batteries

Advanced Energy Materials, 2022
The monoclinic GeP with large capacity, low plateau, and high initial coulombic efficiency (ICE) has been proved to be alternative anode for Li‐ion batteries. However, the heavy use of Ge raw material with its high price, hinders its further development.
Yaqing Wei, Runzhe Yao, Yinghe Zhao, R. Yang, Junlong Liu, Xuhao Liu, Huiqiao Li   +6 more
semanticscholar   +1 more source

Design of Mid-Infrared Ge1–x Snx Homojunction p-i-n Photodiodes on Si Substrate

IEEE Sensors Journal, 2022
This work reports an optimal design and modeling of a high-performance normal-incidence GeSn homojunction p-i-n PDs on p-doped silicon (Si) substrate via Intrinsic-Si buffer.
Harshvardhan Kumar, R. Basu
semanticscholar   +1 more source

Crystalline and optoelectronic properties of Ge1−x Sn x /high-Si-content-Si y Ge1−x−y Sn x double-quantum wells grown with low-temperature molecular beam epitaxy

Semiconductor Science and Technology, 2022
In this study, we investigated the impact of the growth temperatures of molecular beam epitaxy method for the Si y Ge1−x−y Sn x barrier with a Si content over 20% of Ge1−x Sn x /Si y Ge1−x−y Sn x single-quantum well (QW) on their crystalline and ...
Shi-yang Zhang, S. Shibayama, O. Nakatsuka   +2 more
semanticscholar   +1 more source

High-Temperature Exciton Photoconductivity of Ge1 – xNdxS Crystals

Crystallography reports (Print), 2021
A. Alekperov, A. Dashdemirov, A. Shumskaya, S. Jabarov   +3 more
semanticscholar   +1 more source

Mid-infrared Imaging Using Strain-Relaxed Ge1-xSnx Alloys Grown on 20 nm Ge Nanowires.

Nano letters (Print)
Germanium-tin (Ge1-xSnx) semiconductors are a front-runner platform for compact mid-infrared devices due to their tunable narrow bandgap and compatibility with silicon processing.
L. Luo, M. Atalla, S. Assali, S. Koelling, G. Daligou, O. Moutanabbir   +5 more
semanticscholar   +1 more source

Strong Phonon-Phonon Interactions Securing Extraordinary Thermoelectric Ge1- xSb xTe with Zn-Alloying-Induced Band Alignment.

Journal of the American Chemical Society, 2019
The ability of substitution atoms to decrease thermal conductivity is usually ascribed to the enhanced phonon-impurity scattering by assuming the original phonon dispersion relations.
M. Hong, Y. Wang, Tianli Feng, Qiang Sun, Shengduo Xu, S. Matsumura, S. Pantelides, J. Zou, Zhi-gang Chen   +8 more
semanticscholar   +1 more source

Optimization of Railway Pantograph-Catenary Systems for Over 350 km/h Based on an Experimentally Validated Model

IEEE Transactions on Industrial Informatics
The pantograph-catenary system is widely used in most electrified rail networks around the world to transmit continuous electric current to the train. Most studies about the pantograph-catenary interaction are performed at a speed of lower than 350 km/h.
Yang Song, Xiaobing Lu, Yanhong Yin, Yuhui Liu, Zhigang Liu   +4 more
semanticscholar   +1 more source

Goldfish: Monolingual Language Models for 350 Languages

arXiv.org
For many low-resource languages, the only available language models are large multilingual models trained on many languages simultaneously. Despite state-of-the-art performance on reasoning tasks, we find that these models still struggle with basic ...
Tyler A. Chang, Catherine Arnett, Zhuowen Tu, Benjamin K. Bergen   +3 more
semanticscholar   +1 more source

Precipitation and reverted austenite formation in maraging 350 steel: competition or cooperation?

Acta Materialia
Aged maraging steels offer unique strength and toughness via the presence of finely dispersed precipitates, allowing the material to reach values of up to 2400 MPa in yield strength in the case of 18Ni350. However, when aging heat treatments above 550 °C
A. Feitosa, G. G. Ribamar, J. Escobar, R. Sonkusare, T. Boll, F. Coury, J. Ávila, J.P. Oliveira, A. F. Padilha   +8 more
semanticscholar   +1 more source

Selective growth of Ge1−xSnx epitaxial layer on patterned SiO2/Si substrate by metal–organic chemical vapor deposition

, 2017
W. Takeuchi, T. Washizu, S. Ike, O. Nakatsuka, S. Zaima   +4 more
semanticscholar   +1 more source