Results 141 to 150 of about 491,180 (164)

Formation of ultra-low resistance contact with nickel stanogermanide/heavily doped n+-Ge1−xSnx structure

Semiconductor Science and Technology, 2018
We examined the formation of Ni(Ge1−xSnx)/n+-Ge1−xSnx contacts with Sb- and P-doped Ge1−xSnx epitaxial layers with various electron concentrations and investigated the crystalline structure and contact resistivity.
J. Jeon, A. Suzuki, O. Nakatsuka, S. Zaima   +3 more
semanticscholar   +1 more source

Optimizing Electronic Quality Factor toward High‐Performance Ge1−x−yTaxSbyTe Thermoelectrics: The Role of Transition Metal Doping

Advances in Materials, 2021
Owing to high intrinsic figure‐of‐merit implemented by multi‐band valleytronics, GeTe‐based thermoelectric materials are promising for medium‐temperature applications.
Meng Li, Qiang Sun, Shengduo Xu, M. Hong, Wan-Yu Lyu, Ji-Xing Liu, Yuan Wang, M. Dargusch, J. Zou, Zhi-gang Chen   +9 more
semanticscholar   +1 more source

Triggering the Phase Conversion of GeP from Monoclinic to Cubic by Zn Substitution toward a High‐Rate Ge1−xZnxP Solid Solution Anode for Li‐Ion Batteries

Advanced Energy Materials, 2022
The monoclinic GeP with large capacity, low plateau, and high initial coulombic efficiency (ICE) has been proved to be alternative anode for Li‐ion batteries. However, the heavy use of Ge raw material with its high price, hinders its further development.
Yaqing Wei, Runzhe Yao, Yinghe Zhao, R. Yang, Junlong Liu, Xuhao Liu, Huiqiao Li   +6 more
semanticscholar   +1 more source

Sn-incorporation effect on thermoelectric properties of Sb-doped Ge-rich Ge1−x−y Si x Sn y epitaxial layers grown on GaAs(001)

Japanese Journal of Applied Physics, 2022
We investigate Sn incorporation effects on the thermoelectrical characteristics of n-type Ge-rich Ge1−x−y Si x Sn y layers (x ≈ 0.05−0.1, y ≈ 0.03) pseudomorphically grown on semi-insulating GaAs(001) substrates by molecular beam epitaxy. Despite the low
M. Kurosawa, Masaya Nakata, T. Zhan, M. Tomita, Takanobu Watanabe, O. Nakatsuka   +5 more
semanticscholar   +1 more source

Crystalline and optoelectronic properties of Ge1−x Sn x /high-Si-content-Si y Ge1−x−y Sn x double-quantum wells grown with low-temperature molecular beam epitaxy

Semiconductor Science and Technology, 2022
In this study, we investigated the impact of the growth temperatures of molecular beam epitaxy method for the Si y Ge1−x−y Sn x barrier with a Si content over 20% of Ge1−x Sn x /Si y Ge1−x−y Sn x single-quantum well (QW) on their crystalline and ...
Shi-yang Zhang, S. Shibayama, O. Nakatsuka   +2 more
semanticscholar   +1 more source

Design of Mid-Infrared Ge1–x Snx Homojunction p-i-n Photodiodes on Si Substrate

IEEE Sensors Journal, 2022
This work reports an optimal design and modeling of a high-performance normal-incidence GeSn homojunction p-i-n PDs on p-doped silicon (Si) substrate via Intrinsic-Si buffer.
Harshvardhan Kumar, R. Basu
semanticscholar   +1 more source

Strong Phonon-Phonon Interactions Securing Extraordinary Thermoelectric Ge1- xSb xTe with Zn-Alloying-Induced Band Alignment.

Journal of the American Chemical Society, 2019
The ability of substitution atoms to decrease thermal conductivity is usually ascribed to the enhanced phonon-impurity scattering by assuming the original phonon dispersion relations.
M. Hong, Y. Wang, Tianli Feng, Qiang Sun, Shengduo Xu, S. Matsumura, S. Pantelides, J. Zou, Zhi-gang Chen   +8 more
semanticscholar   +1 more source

Mid-infrared Imaging Using Strain-Relaxed Ge1-xSnx Alloys Grown on 20 nm Ge Nanowires.

Nano letters (Print)
Germanium-tin (Ge1-xSnx) semiconductors are a front-runner platform for compact mid-infrared devices due to their tunable narrow bandgap and compatibility with silicon processing.
L. Luo, M. Atalla, S. Assali, S. Koelling, G. Daligou, O. Moutanabbir   +5 more
semanticscholar   +1 more source

Structural Characterization of Oleylamine- and Dodecanethiol-Capped Ge1–xSnx Alloy Nanocrystals

, 2021
Microwave-assisted heating methods have been used to synthesize oleylamine-capped Ge1–xSnx nanocrystals.
Kathryn A. Newton, H. R. Sully, F. Bridges, S. Carter, S. Kauzlarich   +4 more
semanticscholar   +1 more source

High-Temperature Exciton Photoconductivity of Ge1 – xNdxS Crystals

Crystallography reports (Print), 2021
A. Alekperov, A. O. Dashdemirov, A. Shumskaya, S. Jabarov   +3 more
semanticscholar   +1 more source