Results 11 to 20 of about 6,666,967 (179)

Synthesis of Ge1-xSnx Alloy Thin Films by Rapid Thermal Annealing of Sputtered Ge/Sn/Ge Layers on Si Substrates. [PDF]

open access: yesMaterials (Basel), 2018
In this work, nanocrystalline Ge1-xSnx alloy formation from a rapid thermal annealed Ge/Sn/Ge multilayer has been presented. The multilayer was magnetron sputtered onto the Silicon substrate.
Mahmodi H   +5 more
europepmc   +3 more sources

Status of the commissioning of the CMS GE1/1 station [PDF]

open access: yes, 2023
This article describes the results obtained from a test on GE1/1 GEM detectors in magnetic field. The motivation of the test was driven by the need of defining a safe operation procedure for GE1/1 detectors installed in CMS, after many instabilities were
Calzaferri, Simone, Calzaferri, S.
core   +1 more source

GeSn on Insulators (GeSnOI) Toward Mid-infrared Integrated Photonics

open access: yesFrontiers in Physics, 2019
In recent years, Ge and Ge1−xSnx materials and devices have achieved rapid progress in integrated photonics. However, conventional heteroepitaxy of active photonic devices compromises the area on Si for CMOS electronics, limiting the scale of integration.
Xiaoxin Wang   +7 more
doaj   +1 more source

Comparative Advances in Sulfide and Halide Electrolytes for Commercialization of All-Solid-State Lithium Batteries. [PDF]

open access: yesAdv Mater
This review compares sulfide‐ and halide‐based solid electrolytes for all‐solid‐state lithium batteries (ASSBs), highlighting their ionic conductivity, chemical stability, manufacturability, and compatibility with lithium metal. Sulfides offer higher conductivity, while halides provide enhanced stability and scalability.
Bouguern MD   +5 more
europepmc   +2 more sources

Formation of ultra-thin Ge1−xSnx/Ge1−x−ySixSny quantum heterostructures and their electrical properties for realizing resonant tunneling diode

open access: yes, 2020
Huge thermal noise owing to the narrow energy bandgap is one of the critical issues for group IV-based photonics in the mid-infrared regime. With this motivation, we examined to form Ge1−xSnx/Ge1−x−ySixSny quantum heterostructures (QHs) by molecular beam
Suprayoga, Edi   +8 more
core   +2 more sources

N-Heterocyclic Carbene Stabilized Bisacylgermylenes. [PDF]

open access: yesChemistry
We developed a metal‐free strategy for acyl group abstraction, enabling access to novel germenolates 2a,b, or NHC‐stabilized bisacylgermylenes 4a,b. This novel class of germylenes exhibit nucleophilic reactivity toward iron and boron electrophiles, and can alternatively be prepared by the reaction of dichlorobisacylgermane and geminal bisgermenolate at
Paris M   +3 more
europepmc   +2 more sources

Sn diffusion during Ni germanide growth on Ge1-xSnx [PDF]

open access: yes, 2011
We report on the redistribution of Sn during Ni germanide formation on Ge1– x Sn x /〈Ge(100)〉 and its influence on the thin film growth and properties. These results show that the reaction involves the formation of Ni5Ge3 and NiGe.
J. Demeulemeester   +33 more
core   +3 more sources

Effects of Intermixing in Sb2Te3/Ge1+xTe Multilayers on the Thermoelectric Power Factor [PDF]

open access: yes, 2023
Over the past few decades, telluride-based chalcogenide multilayers, such as PbSeTe/PbTe, Bi2Te3/Sb2Te3, and Bi2Te3/Bi2Se3, were shown to be promising high-performance thermoelectric films. However, the stability of performance in operating environments,
Blake, Graeme; id_orcid   +3 more
core   +1 more source

Atmospheric water recycling an essential feature of critical natural asset stewardship

open access: yesGlobal Sustainability
Non-technical summary In this paper, we explore how critically important ecosystems on the land provide evaporation to the atmosphere, which will later fall as precipitation elsewhere.
Patrick W. Keys   +3 more
doaj   +1 more source

Ni ohmic contacts to n-type Ge1−x−ySixSny using phosphorous implant and segregation

open access: yes, 2015
N-type Ge1−x−ySixSny ternary alloy was successfully grown by the Sb in situ doping technique through sputter epitaxy method. A study comparing the electrical contact characteristic of n- Ge1−x−ySixSny with and without phosphorous implantation was ...
Buwen Cheng   +6 more
core   +1 more source

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