Results 191 to 200 of about 167,769 (338)
Gaia: segmented germanium detector for high-energy X-ray fluorescence and spectroscopic imaging. [PDF]
Rumaiz AK +15 more
europepmc +1 more source
In‐situ doping during growth of SnSe and subsequent attachment of SnS produces high‐quality lateral pn‐heterojunctions between van der Waals semiconductors. Electron beam induced current measurements demonstrate electrically active pn‐junctions, paving the way for devices that harness charge separation at lateral interfaces in layered heterostructures.
Peter Sutter +4 more
wiley +1 more source
SURFACE CHEMICAL KINETICS IN THE GERMANIUM-IODINE REACTION
Donald R. Olander
openalex +1 more source
Relationships of the Chemical and Electrical Interfacial Properties of Germanium ‐ SiO2 Systems [PDF]
K. L. Wang, P. Gray
openalex +1 more source
Modular diffractive deep neural network metasurfaces encode and reconstruct holograms across layer combinations and wavelengths, enabling secure, multifunctional operation. Each layer acts independently yet composes jointly, yielding up to m(2N −1) channels for m wavelengths and N layers.
Cherry Park +4 more
wiley +1 more source
Robust and localised control of a 10-spin qubit array in germanium. [PDF]
John V +12 more
europepmc +1 more source
Integration of Germanium Photodetectors on Silicon for On-Chip Optical Interconnects [PDF]
Solomon Assefa +2 more
openalex +1 more source
Surface Diffusion in SnTe‐PbTe Monolayer Lateral Heterostructures
The lateral heterostructures between 2D materials often suffer from the interdiffusion at the interfaces. Here, a surface diffusion mechanism is found to be dominating at the interfaces between semiconducting SnTe and PbTe monolayers. Atomically sharp interfaces can be achieved by suppressing this diffusion process. ABSTRACT The construction of complex
Jing‐Rong Ji +9 more
wiley +1 more source
Comparative thermoelastic analysis of semiconductors with an external heat source under three theories. [PDF]
Das B, Islam N, Lahiri A.
europepmc +1 more source

