Results 81 to 90 of about 47,631 (265)

Fabrication and characterisation of novel Ge MOSFETs [PDF]

open access: yes
As high-k dielectrics are introduced into commercial Si CMOS (Complimentary Metal Oxide Semiconductor) microelectronics, the 40 year channel/dielectric partnership of Si/SiO2 is ended and the door opened for silicon to be replaced as the active channel ...
Beer, Chris
core  

Germanium Distributions in Zeolites Derived from Neural Network Potentials.

open access: yes
Germanosilicate zeolites have played a pivotal role in the recent surge in synthesis of novel zeolite topologies. This success has been attributed to the combined effect of the high hydrolytic lability and specific distribution of germanium within the ...
Indranil, Saha   +4 more
core   +1 more source

Mechanism of vertical Ge nanowire nucleation on Si (111) during subeutectic annealing and growth

open access: yes, 2011
The direct integration of Ge nanowires with silicon is of interest in multiple applications. In this work, we describe the growth of high-quality, vertically oriented Ge nanowires on Si (111) substrates utilizing a completely sub-Au-Si-eutectic annealing
Chung, Sung Hwan   +13 more
core   +1 more source

Adaptive Observer for Coupled Wave PDE and Infinite ODE With Sampled Data and Unknown Input: Application to Brain Hemodynamics Estimation

open access: yesInternational Journal of Adaptive Control and Signal Processing, EarlyView.
This article proposes a convergent adaptive observer for a damped wave PDE and an infinite‐dimensional ODE coupled in cascade using sampled‐in‐space ODE state measurements. The proposed observer estimates the distributed states of the PDE and ODE along with unknown PDE parameters and spatial input.
Zehor Belkhatir   +2 more
wiley   +1 more source

Strain-relaxed, high Ge content, SiGe layers grown on Si (100) substrate by reduced pressure - chemical vapour deposition (RP-CVD) [PDF]

open access: yes
A different approach was taken to relieve strain from a high Germanium (Ge) content, Silicon-Germanium (SiGe) layers on a Silicon (Si) (100) substrate by growing a thin Ge under-layer between substrate and layer.
Alabdulali, Haitham
core  

β‐Catenin/c‐Myc Axis Modulates Autophagy Response to Different Ammonia Concentrations

open access: yesAdvanced Biology, Volume 9, Issue 3, March 2025.
Ammonia, detoxified by the liver into urea and glutamine, impacts autophagy differently at varying levels. Low ammonia activates autophagy via c‐Myc and β‐catenin, while high levels suppress it. Using Huh7 cells and Spf‐ash mice, c‐Myc's role in cytoprotective autophagy is revealed, offering insights into hyperammonemia and potential therapeutic ...
S. Sergio   +11 more
wiley   +1 more source

Mechanical, electromechanical, and optical properties of germanium nanowires [PDF]

open access: yes, 2009
textIn order to completely assess the potential of semiconductor nanowires for multifunctional applications such as flexible electronics, nanoelectromechanical systems (NEMS), and composites, a full characterization of their properties must be obtained ...
Smith, Damon Allen
core  

Low‐Cost, Large‐Scale Nanoporous Metals by Mechanical Alloying, Oxide Reduction, and Dealloying of Powders

open access: yesAdvanced Engineering Materials, EarlyView.
Powder metal processing provides scalable advantages in nanoporous (np) metal development. Mechanical alloying is used to produce unique precursors for hybrid nanopore formation by oxide reduction and dealloying. As demonstrated in np Ag, this approach improves process efficiency while promoting smaller ligaments and larger pores, both of which are ...
Mark A. Atwater, Oliver A. Fowler
wiley   +1 more source

Optimisation studies on strain-engineered Germanium heterostructures [PDF]

open access: yes
The physical gate lengths of state-of-the-art CMOS devices are 45 nm and are anticipated to reach just 20 nm by 2007. Due to the prohibitive capital expenditure required for next-generation CMOS technologies, leading device manufacturers are now ...
Morris, R. J. H. (Richard J. H.)
core  

Low‐Angle Grain Boundaries and Re‐Segregation in Single‐Crystalline Ni‐Base Superalloys

open access: yesAdvanced Engineering Materials, EarlyView.
This work demonstrates that Re‐segregation at low‐angle grain boundaries (LAGBs) in Ni‐base superalloys is influenced by misorientation angle. Advanced microscopy and atom probe tomography reveal that higher misorientation angles increases Re‐segregation.
Alireza B. Parsa   +9 more
wiley   +1 more source

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