Results 111 to 120 of about 2,452 (221)

An evidence of defect gettering in GaN

, 2008
The effect of Neon ion implantation on the structural and optical properties of MOCVD grown GaN was studied. X-ray diffraction and low temperature photoluminescence measurements were carried out on the implanted samples annealed at 900 degrees C.
Yang H, Ali, A, Quaid I Azam Univ, Adv Mat Phys Lab, Dept Phys, Islamabad, Pakistan. 电子邮箱地址: akbar@qau.edu.pk, Ali A, Wang YT, Zhu JJ, Majid A   +5 more
core  

Hierarchical Super-Hydrophilic Aluminum Oxide Architectures on Textured Silicon for Aqueous- and Vapor-Phase Interaction

Chemosensors
Hierarchical super-hydrophilic surfaces were realized by forming porous anodic aluminum oxide (AAO) and boehmite [AlO(OH)] on micro-textured Si wafers.
Hyo-Ryoung Lim, Tae Woong Yun, Nu Si A Eom, Doyoun Kim, Chae Yeon Hong, Yong-Ho Choa   +5 more
doaj   +1 more source

Efficiency Improvement of Industrial Silicon Solar Cells by the POCl₃ Diffusion Process. [PDF]

Materials (Basel), 2023
Xu X, Wu W, Wang Q.
europepmc   +1 more source

Wafer-Scale Room-Temperature Bonding of Smooth Au/Ti-Based Getter Layer for Vacuum Packaging. [PDF]

Sensors (Basel), 2022
Matsumae T, Kariya S, Kurashima Y, Thu LHH, Higurashi E, Hayase M, Takagi H.   +6 more
europepmc   +1 more source

Gettering Technology Based on Porous Silicon

, 2002
This paper briefly reviews a gettering technology based on porous silicon (PS). PS layers shown to have effective gettering properties for fast-diffusing impurities.
L. DOLGYI, V. YAKOVTSEVA, V. BONDARENCO, FERRARI, Aldo, G. LA MEDICA, BALUCANI, Marco   +5 more
core   +1 more source

The Physical mechanisms of gettering properties of nickel clusters in silicon solar cells

Physical Sciences and Technology
This study demonstrates that the concentration of nickel atoms near the surface of solar cells is 2–3 orders of magnitude higher than in the bulk material, significantly enhancing the gettering rate at the surface. Using IR-microscopy, SEM, and SIMS, we
Zoir Kenzhaev, Kh. Iliev, K. Ismailov, G. Mavlonov, S. Koveshnikov, B. Ismaylov, B. Isamov   +6 more
doaj  

Development of silicon solar cells and photovoltaic modules in Brazil: analysis of a pilot production

Materials Research, 2012
Brazil is a country that receives a large amount of solar radiation. Moreover, high quality quartz mines has been found in its territory and the country has well-established metallurgical grade silicon industries.
Adriano Moehlecke, Izete Zanesco
doaj  

Isotopically Enriched Layers for Quantum Computers Formed by ²⁸Si Implantation and Layer Exchange. [PDF]

ACS Appl Mater Interfaces, 2023
Schneider E, England J.
europepmc   +1 more source

Effect of Residual Oxygen Concentration on the Lattice Parameters of Aluminum Nitride Powder Prepared via Carbothermal Reduction Nitridation Reaction. [PDF]

Materials (Basel), 2022
Kim J, Ahn H, Kim SJ, Kim JY, Pee JH.
europepmc   +1 more source

Investigations of impurity gettering in multicrystalline silicon

, 2001
The processes of gettering the recombination-active impurities in multicrystalline silicon were investigated using methods of mass spectrometry of neutral atoms with the depth profile analysis and spectroscopy of a surface photovoltage (permitting to ...
Rassamakin, Yu.V., Romanyuk, B.N., Litovchenko, V.G., Oberemok, A.S., Volkov, S.G., Popov, V.G., Evtukh, A.A.   +6 more
core   +1 more source