Results 111 to 120 of about 300 (179)

Exogenous melatonin alleviates premature ovarian failure by regulating granulosa cell autophagy. [PDF]

NPJ Regen Med
Zhou GH, He YF, Wang HL, Lv YB, Cong YM, Sun ZL, Jiang XW, Yu WH.   +7 more
europepmc   +1 more source

A radiometric timescale challenges the chronology of the iconic 1992 Guliya ice core. [PDF]

Sci Adv
Hou S, Jenk TM, Jiang W, Zhang W, Hu H, Feng X, Li H, Wu SY, Pang H, Yu J, Huang R, Lu ZT, Yang GM, Bender M, Schwikowski M.   +14 more
europepmc   +1 more source

GETTERING IN SILICON

, 2016
openaire   +1 more source

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Phosphorus gettering and intrinsic gettering of nickel in silicon

Applied Physics Letters, 1984
High resolution electron microscopy has been used to study the microstructural changes brought about by phoshorus gettering and intrinsic gettering of Ni in Si. Phosphorus gettering proceeds by the formation of SiP particles at the Si/phosphosilicate glass interface, which emit a large concentration of Si interstitials and result in the gettering of Ni
Abbas Ourmazd, Schröter W, Ourmazd A
exaly   +2 more sources

An updated review of getters and gettering

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1985
A brief review of present day getter materials is made with reference to the two principal families, i.e., evaporable and nonevaporable getters. The main physicochemical processes involved in the gettering process are reviewed in order to establish the concept of gettering-selective chemical pumping.
T. A. Giorgi, B. Ferrario, B. Storey
openaire   +1 more source

Cesium gettering by graphite-improvement in the gettering efficiency

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 1990
Results of experimental investigations of the cesium (Cs) gettering properties of graphite at various temperatures are reported. Possible reasons for this behavior are discussed. A model based on the grain boundary and surface diffusion of Cs in graphite is used to explain the results.
N D, Bhaskar, C M, Kahla
openaire   +2 more sources

Getters and gettering in plasma display panels

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1998
In this article, starting from a calculation of the internal conductance inside AC and DC plasma display panels (PDPs), a simple theoretical model is used to estimate the pressure evolution inside a display during the exhausting process and the lifetime.
R. M. Caloi, C. Carretti
openaire   +1 more source

Study of Gettering Mechanisms in Silicon: Competitive Gettering between Phosphorus Diffusion Gettering and Other Gettering Sites

Solid State Phenomena, 2007
The effectiveness of phosphorus diffusion gettering (PDG) and related segregation coefficients for different metal impurities were measured applying thermal treatments in the temperature range 800-950 °C for different times. We used multi-crystalline and mono-crystalline CZ p-type wafers with different boron concentrations and different levels of ...
Mohammad B. Shabani, T. Yamashita, E. Morita   +2 more
openaire   +1 more source

Getters and Gettering

Japanese Journal of Applied Physics, 1974
The principal modern getter devices characteristic of each of the two main getter families, i.e. flash and bulk, are established and briefly illustrated. The essential physico-chemical processes involved in the gettering mechanism are reviewed to establish the essence of the gettering process. The main design and technical requirements of modern getter
openaire   +1 more source

The study on gettering mechanism of double-gettering technique

Chinese Physics Letters, 1987
The applications of double-gettering technique (DGT) for silicon single crystal indicate its strong gettering effectiveness. By using E-center model, the minimum concentration of phosphorus, gettering process and the continuous gettering ability were investigated.
Mai Zhenhong, Dai Daoyang, Zhou Shiren, Ye Yizheng, Ye Shuichi   +4 more
openaire   +1 more source