Results 91 to 100 of about 2,452 (221)

Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonators with Q-Factor above 250,000

Proceedings
In this work, the fabrication of wafer-level vacuum-packaged 3C-SiC on Si double- clamped beam resonators via glass–silicon anodic bonding using Ti-based vacuum gettering is reported.
Sergio Sapienza, Luca Belsito, Matteo Ferri, Ivan Elmi, Marcin Zielinski, Francesco La Via, Alberto Roncaglia   +6 more
doaj   +1 more source

Phosphorus and boron diffusion gettering of iron in monocrystalline silicon [PDF]

, 2011
We have studied experimentally the phosphorus diffusion gettering (PDG) of iron in monocrystalline silicon at the temperature range of 650–800 °C.
Vähänissi, Ville, Yli-Koski, Marko, H. Talvitie, Talvitie, Heli, Haarahiltunen, Antti, V. Vähänissi, M. Yli-Koski, H. Savin, Savin, Hele, A. Haarahiltunen, Yli-Koski, Marko   +10 more
core   +1 more source

Gettering of Impurities in Silicon

, 1985
Despite the apparent dissimilarities between different gettering methods, we show that many can be understood in terms of two basic mechanisms. The first involves the interaction of selfinterstitials (emitted, for example, by P in-diffusion and ...
A. Ourmazd
core   +1 more source

Electrical and Optoelectronic Properties Enhancement of n-ZnO/p-GaAs Heterojunction Solar Cells via an Optimized Design for Higher Efficiency. [PDF]

Materials (Basel), 2022
Derbali L.
europepmc   +1 more source

Titanium gettering in Doublet III [PDF]

, 1980
The application of mild titanium gettering in the Doublet III tokamak has led to a significant improvement in the obtainable operating regimes and discharge parameters for all of the many plasma cross-sectional shapes studied.
de Grassie, J.S., Callis, R., Campbell, G.   +2 more
core  

Phosphorus and Aluminum Gettering of Gold in Silicon: Simulation and Optimization Considerations

, 1995
Using the diffusion-segregation equation, modeling and simulations of gettering Au (a substi-tutional-interstitial species in Si) away from the Si bulk have been performed.
R. Gafiteanu, T. Y. Tan, U. Gösele
core   +1 more source

Design of Novel HS/HC/HT Twitch Aluminum Alloys

Engineering Proceedings
The design of novel high-strength (HS), high-electrical-conductivity (HC) and high-thermostability (HT) aluminum alloys is presented utilizing recycled automotive aluminum twitch for cable conductor applications.
Maria-Ioanna T. Tzini, Gregory B. Olson
doaj   +1 more source

Porous silicon and aluminum co-gettering experiment in p-type multicrystalline silicon substrate

Science and Technology of Advanced Materials, 2007
The lifetimes of non-equilibrium minority carriers, which bound with the diffusion length, are considered as two important parameters of the low-quality multicrystalline silicon (mc-Si) substrate.
P.N. Vinod
doaj  

Full W ITER: Assessment of expected W erosion and implications of boronization on fuel retention

Nuclear Materials and Energy
Substituting Beryllium (Be) with Tungsten (W) as material for the first wall gives rise to new challenges for the ITER project. The additional W at the main chamber could result in a significant influx of high-Z impurities into the plasma owing to the ...
K. Schmid, T. Wauters
doaj   +1 more source

Production of upgraded metallurgical-grade silicon for a low-cost, high-efficiency, and reliable PV technology

Frontiers in Photonics
Upgraded metallurgical-grade silicon (UMG-Si) has the potential to reduce the cost of photovoltaic (PV) technology and improve its environmental profile.
José Manuel Míguez Novoa, Volker Hoffmann, Eduardo Forniés, Laura Mendez, Marta Tojeiro, Fernando Ruiz, Manuel Funes, Carlos del Cañizo, David Fuertes Marrón, Nerea Dasilva Villanueva, Luis Jaime Caballero, Bülent Arıkan, Raşit Turan, Raşit Turan, Hasan Hüseyin Canar, Hasan Hüseyin Canar, Guillermo Sánchez Plaza   +16 more
doaj   +1 more source