Results 71 to 80 of about 6,652 (220)
Synthesis of Indium Nitride Epitaxial Layers on a Substrate of Porous Indium Phosphide [PDF]
Журнал нано- та електронної фізики, 2015 The paper presents a technique to obtain InN films on porous InP substrates by radical-beam gettering epitaxy. According to the results of the Auger spectroscopy, InN film thickness ranged from 100 nm to 0.5 microns depending on the etching conditions.
J.A. Suchikova
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Silicon solar cell process development, fabrication and analysis [PDF]
For UCP Si, randomly selected wafers and wafers cut from two specific ingots were studied. For the randomly selected wafers, a moderate gettering diffusion had little effect. Moreover, an efficiency up to 14% AMI was achieved with advanced processes. For
Iles, P. A., Leung, D. C.
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Further study of inversion layer MOS solar cells [PDF]
A group of inversion layer MOS solar cells has been fabricated. The highest value of open-circuit voltage obtained for the cells is 0.568V. One of the cells has produced a short-circuit current of 79.6 mA and an open-circuit voltage of 0.54V.
Ho, Fat Duen
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High efficiency solar cell processing [PDF]
At the time of writing, cells made by several groups are approaching 19% efficiency. General aspects of the processing required for such cells are discussed.
Ho, F., Iles, P. A.
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Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering, 2019 The processes of gettering of fast-diffusing metal impurities and structure defects in silicon, mainly used in the production of integrated circuits, power high-voltage devices, nuclear-doped silicon, are considered. The getters based on structural defects and gas-phase getters based on chlorine-containing compounds are analyzed.
openaire +2 more sources
Surface modifications by wet oxidation method removing getter layer in crystalline silicon cells. [PDF]
RSC Adv, 2023 Zhang G +5 more
europepmc +1 more source
High purith low defect FZ silicon [PDF]
The most common intrinsic defects in dislocation-free float zone (FZ) silicon crystals are the A- and B-type swirl defects. The mechanisms of their formation and annihilation have been extensively studied.
Kimura, H., Robertson, G.
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Studies of oxygen-related and carbon-related defects in high-efficiency solar cells [PDF]
, 1985 Oxygen and carbon related defects in silicon, particularly as related to high-efficiency silicon solar cells were studied. A summary of oxygen processes in silicon versus process temperature was shown along with experimental results.
Corbett, J. W.
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EPJ PhotovoltaicsIn this work, the long-term behavior of excess charge carrier lifetime in n-type FZ-Si wafers without presence of highly doped layers is investigated during illumination at elevated temperatures.
Mehler Melanie +5 more
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Epitaxial solar cells fabrication [PDF]
Silicon epitaxy has been studied for the fabrication of solar cell structures, with the intent of optimizing efficiency while maintaining suitability for space applications.
Daiello, R. V. +2 more
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