Results 71 to 80 of about 2,452 (221)
Advanced Sustainable Systems, Volume 9, Issue 10, October 2025.Schematic representation of the alloy design process for the Nb‐Si‐Ge system, based on the liquidus projection and phase diagram of the Nb‐Si‐Ge system. The figure includes the as‐cast microstructure produced via arc melting, the electrochemical cell setup and electrode preparation through slurry coating, and the specific capacitance of each electrode ...
Snehal L. Kadam +2 more
wiley +1 more source
IEEE Journal of the Electron Devices SocietyWe have developed a novel molecular-ion implantation technique and a molecular-ion-implanted silicon epitaxial wafer for highly sensitive CMOS image sensors.
Ryo Hirose +4 more
doaj +1 more source
Physical Modeling of Backside Gettering
, 1984 To understand gettering action we have modeled the diffusion of metal to a backside getter. A first order model describing the diffusion of metals to an infinite backside sink is found not to fit experimental data.
Gary B. Bronner, James D. Plummer
core +1 more source
Revealing Nanoscale Solute‐Rich Clusters in Bulk Metallic Glasses by Atom Probe Tomography
Small Methods, Volume 9, Issue 9, September 1, 2025.This study presents a new methodology that resolves a longstanding challenge in multicomponent bulk metallic glasses by revealing 3D nanoscale solute‐rich clusters via atom probe tomography. The findings further establish direct correlations between solute‐rich clustering and local hardness, offering a powerful framework for investigating structure ...
Keita Nomoto +8 more
wiley +1 more source
Intrinsic Gettering in Oxygen-Free Silicon
, 1984 We found that the intrinsic gettering can be effectively realized in oxygen-lean Czochralski silicon grown in a magnetic field as well as in oxygen-free float-zone silicon.
K. Nauka, H. C. Gatos, J. Lagowski
core +1 more source
Gettering in silicon photovoltaics: A review
, 2022 A key efficiency-limiting factor in silicon-based photovoltaic (PV) devices is the quality of the silicon material itself. With evolving cell architectures that better address other efficiency-loss channels in the device, the final device efficiency ...
Liu, AnYao +2 more
core +1 more source
High Quality Antimony‐Doped n‐Type Silicon Wafers for Solar Cell Applications
Solar RRL, Volume 9, Issue 17, September 2025.This study investigates industrial antimony‐doped silicon wafers grown by the recharged Czochralski method. The wafers show high and uniform quality, with bulk lifetimes near theoretical Auger limits at injection levels close to maximum power point. Phosphorus gettering improves the lower‐quality regions.
Afsaneh Kashizadeh +8 more
wiley +1 more source
International Journal of Applied Ceramic Technology, Volume 22, Issue 5, September/October 2025.Abstract Pressureless sintering of Si3N4 doped with 2 mol% Y2O3 and 5 mol% MgO was carried out at temperatures ranging from 1700°C to 1770°C in three kinds of packing powders consisting of Si3N4 and BN coupled with or without addition of Y2O3, MgO, and SiO2.
You Zhou +3 more
wiley +1 more source
Impurity Gettering in Silicon by Thin Polycrystalline Films
, 1992 Capability of impurity gettering by thin polycrystalline films on the backside of silicon wafer was evaluated by minority-carrier diffusion length. Cu was gettered easily during usual cooling after high temperature annealing.
Y. Hayamizu, S. Ushio, T. Takenaka
core +1 more source
TOPCon Solar Cells Made of n‐Type and p‐Type Epitaxially Grown Silicon Wafers
Solar RRL, Volume 9, Issue 16, August 2025.This study investigates the suitability of epitaxially grown silicon wafers for tunnel oxide passivating contact (TOPCon) solar cells in particular the high temperature stability required for boron emitter diffusion. Efficiencies up to 24.4% and 24.7% for n‐type and p‐type wafers were achieved, respectively, which demonstrate the suitability of ...
Armin Richter +8 more
wiley +1 more source