Results 71 to 80 of about 2,912 (170)
Solar RRL, Volume 9, Issue 22, November 2025.This study presents improved regular inverted pyramid structures, which should act as photonic crystals and thus are expected to highly increase light absorption. The prepared structures exhibit light trapping en par with random pyramid textured surfaces, but not as expected above.
Leon Salomon +6 more
wiley +1 more source
Aluminum gettering in photovoltaic silicon
, 2004 The effect of aluminum gettering on different silicon materials used for solar cells has been investigated by means of microwave photoconductivity decay (μ-PCD) and electron beam induced current (EBIC).
X. Wang +4 more
core +1 more source
Advanced Sustainable Systems, Volume 9, Issue 10, October 2025.Schematic representation of the alloy design process for the Nb‐Si‐Ge system, based on the liquidus projection and phase diagram of the Nb‐Si‐Ge system. The figure includes the as‐cast microstructure produced via arc melting, the electrochemical cell setup and electrode preparation through slurry coating, and the specific capacitance of each electrode ...
Snehal L. Kadam +2 more
wiley +1 more source
Competition between gettering by implantation-induced cavities in silicon and internal gettering associated with SiO{sub 2} precipitation [PDF]
, 1996 Dissolved or metallic impurities can degrade silicon integrated circuit (IC) device yields when present in the near surface, active device region. This is such a critical issue that the IC community has set specifications for the reduction of metallic ...
Weber, E. R. +3 more
core +1 more source
Analysis of simultaneous boron and phosphorus diffusion gettering in silicon
, 2022 S.2589-2592We studied the simultaneous phosphorus and boron diffusion gettering (BDG) of iron in silicon by physical modeling. We present improvements to the previously used models for BDG and phosphorus diffusion gettering (PDG).
Schön, Jonas +4 more
core +1 more source
Фізика і хімія твердого тіла, 2020 In this paper, the transmission and reflection spectra of single crystals р-CdTe(111) are measured; solid solutions of Cd1-хZnхTe (х=0.1) in the range (0.2 – 1.7)·10-6 m before and after laser irradiation at the wavelength λ = 532 nm in the energy range ...
P. O. Gentsar, S. M. Levytskyi
doaj +1 more source
Internal Gettering in Czochralski Silicon
, 1984 A review of the use of oxygen precipitation for the purposes of internal gettering in silicon is given. The review considers current ideas about oxygen precipitation mechanisms and the relationships between different precipitate morphologies.
Robert A. Craven
core +1 more source
Synthesis of Indium Nitride Epitaxial Layers on a Substrate of Porous Indium Phosphide [PDF]
Журнал нано- та електронної фізики, 2015 The paper presents a technique to obtain InN films on porous InP substrates by radical-beam gettering epitaxy. According to the results of the Auger spectroscopy, InN film thickness ranged from 100 nm to 0.5 microns depending on the etching conditions.
J.A. Suchikova
doaj
, 1982 Gettering is used in the ISX-B tokamak to reduce the impurity concentration. This paper documents the gettering process used, and compares the expected changes in recycling and radiation with those observed experimentally.
Edmonds, P.H. +3 more
core
Impurity Gettering by Implanted Carbon in Silicon
, 1989 We have observed strong gold gettering by implanted carbon in silicon. It was found that the gettering agents in carbon implanted layers are point defects associated with singular carbon atoms.
H. Wong +4 more
core +1 more source