Results 61 to 70 of about 2,452 (221)

Simulation‐Based Analysis of Silicon Solar Cell Performance with Laser Enhanced Contacts: Impact of Bulk Defect Density and Resistivity

Solar RRL, Volume 9, Issue 21, November 2025.
This study simulates and compares laser‐enhanced contact devices with selective emitter counterparts using experimentally extracted bulk defect parameters across different resistivities. It assesses low‐light response and energy yield under varied solar conditions.
Zhongshu Yang, Marco Ernst, Di Kang, Rabin Basnet, Kean Fong, Peiting Zheng, Jie Yang, Anyao Liu, Daniel Macdonald   +8 more
wiley   +1 more source

Investigation of the Behavior of Nickel Impurity Atoms in the Silicon Lattice Based on First Principles

East European Journal of Physics
This work presents a comprehensive theoretical and experimental study of the behavior of nickel impurity atoms in the silicon crystal lattice. The focus is on analyzing diffusion mechanisms, the energetic characteristics of interstitial nickel atoms ...
Bayrambay K. Ismaylov, Kanatbay A. Ismailov, Nurulla F. Zikrillaev, Atabek E. Atamuratov, Sergey V. Koveshnikov, Zoir T. Kenzhaev, Makhkam M. Khalilloev, Parakhat K. Dilimbetov   +7 more
doaj   +1 more source

Effect of the temperature and the porosity of the gettering process on the removal of heavy metals from Tunisian phosphate rock

Results in Physics, 2017
Gettering is a process by which unwanted impurities are removed by providing an alternative location, this method used by many researchers for the purification of silicon wafers or powder.
R. Daik, M. Lajnef, S.B. Amor, H. Ezzaouia   +3 more
doaj   +1 more source

Influence of laser radiation on optical properties of semiconductor materials

Фізика і хімія твердого тіла, 2020
In this paper, the transmission and reflection spectra of n-Si(100) single crystals are measured; n-GaAs(100); solid solutions of Ge1-хSiх (х=0.85) in the range (0.2 – 1.7)·10-6 m before and after laser irradiation at the wavelength λ = 532 nm.
P. O. Gentsar, S. M. Levytskyi
doaj   +1 more source

Copper in silicon: Quantitative analysis of internal and proximity gettering [PDF]

, 1997
The behavior of copper in the presence of a proximity gettering mechanism and a standard internal gettering mechanism in silicon was studied. He implantation-induced cavities in the near surface region were used as a proximity gettering mechanism and ...
Weber, E.R., McHugo, S.A., Flink, C.
core  

Impurity Gettering by Implanted Carbon in Silicon

, 1989
We have observed strong gold gettering by implanted carbon in silicon. It was found that the gettering agents in carbon implanted layers are point defects associated with singular carbon atoms.
H. Wong, P. K Chu, J. Liu, N. W. Cheung, K. M. Yu   +4 more
core   +1 more source

Main defect reactions behind phosphorus diffusion gettering of iron

, 2022
Art. 244503, 8 S.Phosphorus diffusion is well known to getter effectively metal impurities during silicon solar cell processing. However, the main mechanisms behind phosphorus diffusion gettering are still unclear.
Schön, Jonas, Warta, Wilhelm, Vähänissi, V., Haarahiltunen, Antti, Schubert, Martin C., Savin, Hele   +5 more
core   +1 more source

Optimization of Photolithographic Fabrication of Photonic Crystals and their Use in High Efficiency Solar Cells

Solar RRL, Volume 9, Issue 22, November 2025.
This study presents improved regular inverted pyramid structures, which should act as photonic crystals and thus are expected to highly increase light absorption. The prepared structures exhibit light trapping en par with random pyramid textured surfaces, but not as expected above.
Leon Salomon, Michael Rienäcker, Yevgeniya Larionova, Alexej Haller, Sarah Spätlich, Robby Peibst, Jan Krügener   +6 more
wiley   +1 more source

Quantitative Study of Metal Gettering in Silicon

, 1985
Intrinsic gettering of iron in silicon has been investigated with a novel quantitative approach. Concentrations of electrically active, interstitial iron were determined by Electron Pararnagnetic Resonnance before, and after, various annealing cycles ...
E. R. Weber, Etienne G. Colas, S. Hahn
core   +1 more source

Gettering of Pd to implantation-induced nanocavities in Si [PDF]

, 2015
The gettering of Pd to nanocavities in Si for implantation doses ranging from 5×10¹³ to 1×10¹⁵ cm¯² and annealing temperatures ranging from 750 to 1050 °C was investigated using Rutherford backscattering and cross-sectional transmission electron ...
de M. Azevedo, G., Llewellyn, D. J., Ridgway, M. C., Brett, D. A.   +3 more
core   +1 more source