Results 51 to 60 of about 6,652 (220)

Simulation‐Based Analysis of Silicon Solar Cell Performance with Laser Enhanced Contacts: Impact of Bulk Defect Density and Resistivity

open access: yesSolar RRL, Volume 9, Issue 21, November 2025.
This study simulates and compares laser‐enhanced contact devices with selective emitter counterparts using experimentally extracted bulk defect parameters across different resistivities. It assesses low‐light response and energy yield under varied solar conditions.
Zhongshu Yang   +8 more
wiley   +1 more source

Improvement of charge carrier lifetime in heat exchange method multicrystalline silicon wafers by extended phosphorous gettering process

open access: yesRevue des Énergies Renouvelables, 2011
External phosphorous diffusion gettering were applied using homogenous and extended schemes on multicrystalline silicon (Mc-Si) wafers obtained from solar grade (SOG) silicon feedstock by the heat exchange method (HEM) growth technique.
D. Bouhafs   +5 more
doaj  

Optimization of Photolithographic Fabrication of Photonic Crystals and their Use in High Efficiency Solar Cells

open access: yesSolar RRL, Volume 9, Issue 22, November 2025.
This study presents improved regular inverted pyramid structures, which should act as photonic crystals and thus are expected to highly increase light absorption. The prepared structures exhibit light trapping en par with random pyramid textured surfaces, but not as expected above.
Leon Salomon   +6 more
wiley   +1 more source

Effect of the temperature and the porosity of the gettering process on the removal of heavy metals from Tunisian phosphate rock

open access: yesResults in Physics, 2017
Gettering is a process by which unwanted impurities are removed by providing an alternative location, this method used by many researchers for the purification of silicon wafers or powder.
R. Daik   +3 more
doaj   +1 more source

Influence of laser radiation on optical properties of semiconductor materials

open access: yesФізика і хімія твердого тіла, 2020
In this paper, the transmission and reflection spectra of n-Si(100) single crystals are measured; n-GaAs(100); solid solutions of Ge1-хSiх (х=0.85) in the range (0.2 – 1.7)·10-6 m before and after laser irradiation at the wavelength λ = 532 nm.
P. O. Gentsar, S. M. Levytskyi
doaj   +1 more source

Influence of Germanium Substitution on Phase Stability and Electrochemical Performance of Niobium Silicide

open access: yesAdvanced Sustainable Systems, Volume 9, Issue 10, October 2025.
Schematic representation of the alloy design process for the Nb‐Si‐Ge system, based on the liquidus projection and phase diagram of the Nb‐Si‐Ge system. The figure includes the as‐cast microstructure produced via arc melting, the electrochemical cell setup and electrode preparation through slurry coating, and the specific capacitance of each electrode ...
Snehal L. Kadam   +2 more
wiley   +1 more source

Investigation of the Behavior of Nickel Impurity Atoms in the Silicon Lattice Based on First Principles

open access: yesEast European Journal of Physics
This work presents a comprehensive theoretical and experimental study of the behavior of nickel impurity atoms in the silicon crystal lattice. The focus is on analyzing diffusion mechanisms, the energetic characteristics of interstitial nickel atoms ...
Bayrambay K. Ismaylov   +7 more
doaj   +1 more source

Revealing Nanoscale Solute‐Rich Clusters in Bulk Metallic Glasses by Atom Probe Tomography

open access: yesSmall Methods, Volume 9, Issue 9, September 1, 2025.
This study presents a new methodology that resolves a longstanding challenge in multicomponent bulk metallic glasses by revealing 3D nanoscale solute‐rich clusters via atom probe tomography. The findings further establish direct correlations between solute‐rich clustering and local hardness, offering a powerful framework for investigating structure ...
Keita Nomoto   +8 more
wiley   +1 more source

Dark current spectroscopy of transition metals in CMOS image sensors [PDF]

open access: yes, 2017
We have investigated the effects of deliberate heavymetals contamination on dark current and image defects in CMOS Image Sensors (CIS). Analysis of dark current in these imager dice has revealed different behaviors among most important 3d metals present ...
D'ANGELO, ANTONIO   +12 more
core   +1 more source

Reduction in Dark Current in Photodiodes: A Review

open access: yesMicromachines
Dark current represents a fundamental limiting factor in photodiode performance, establishing the noise floor and constraining detectivity in low-light applications.
Alper Ülkü   +7 more
doaj   +1 more source

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