Results 51 to 60 of about 300 (179)
Disordered Rocksalts as High‐Energy and Earth‐Abundant Li‐Ion Cathodes
Disordered rocksalts with lithium excess (DRX) offer a new direction in Li‐ion cathode design beyond conventional Ni‐ and Co‐based materials. This review highlights the design principles, synthesis strategies, and performance optimization of DRX oxides and oxyfluorides for energy‐dense, sustainable batteries using Earth‐abundant transition metals and ...
Han‐Ming Hau +10 more
wiley +1 more source
This study simulates and compares laser‐enhanced contact devices with selective emitter counterparts using experimentally extracted bulk defect parameters across different resistivities. It assesses low‐light response and energy yield under varied solar conditions.
Zhongshu Yang +8 more
wiley +1 more source
This study presents improved regular inverted pyramid structures, which should act as photonic crystals and thus are expected to highly increase light absorption. The prepared structures exhibit light trapping en par with random pyramid textured surfaces, but not as expected above.
Leon Salomon +6 more
wiley +1 more source
Schematic representation of the alloy design process for the Nb‐Si‐Ge system, based on the liquidus projection and phase diagram of the Nb‐Si‐Ge system. The figure includes the as‐cast microstructure produced via arc melting, the electrochemical cell setup and electrode preparation through slurry coating, and the specific capacitance of each electrode ...
Snehal L. Kadam +2 more
wiley +1 more source
In this paper, the transmission and reflection spectra of single crystals р-CdTe(111) are measured; solid solutions of Cd1-хZnхTe (х=0.1) in the range (0.2 – 1.7)·10-6 m before and after laser irradiation at the wavelength λ = 532 nm in the energy range ...
P. O. Gentsar, S. M. Levytskyi
doaj +1 more source
Synthesis of Indium Nitride Epitaxial Layers on a Substrate of Porous Indium Phosphide [PDF]
The paper presents a technique to obtain InN films on porous InP substrates by radical-beam gettering epitaxy. According to the results of the Auger spectroscopy, InN film thickness ranged from 100 nm to 0.5 microns depending on the etching conditions.
J.A. Suchikova
doaj
In this work, the long-term behavior of excess charge carrier lifetime in n-type FZ-Si wafers without presence of highly doped layers is investigated during illumination at elevated temperatures.
Mehler Melanie +5 more
doaj +1 more source
Surface modifications by wet oxidation method removing getter layer in crystalline silicon cells. [PDF]
Zhang G +5 more
europepmc +1 more source
Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonators with Q-Factor above 250,000
In this work, the fabrication of wafer-level vacuum-packaged 3C-SiC on Si double- clamped beam resonators via glass–silicon anodic bonding using Ti-based vacuum gettering is reported.
Sergio Sapienza +6 more
doaj +1 more source
Electrical and Optoelectronic Properties Enhancement of n-ZnO/p-GaAs Heterojunction Solar Cells via an Optimized Design for Higher Efficiency. [PDF]
Derbali L.
europepmc +1 more source

