Results 31 to 40 of about 2,452 (221)
Methods and mechanisms of gettering of silicon structures in the production of integrated circuits [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2013 Increasing the degree of integration of hardware components imposes more stringent requirements for the reduction of the concentration of contaminants and oxidation stacking faults in the original silicon wafers with its preservation in the IC ...
Pilipenko V. A. +5 more
doaj +2 more sources
Systematic Investigation of Gettering Effects on 4th Row Element Impurities in Si by Dopant Atoms
Advances in Materials Science and Engineering, 2009 The gettering of 4th row element impurities (K, Ca, 3d transition metals, and Zn) in Si crystals by dopant atoms was systematically investigated by first-principles calculation through evaluation of the diffusion barrier and the binding energy.
Koji Sueoka, Ken Kamimura, Seiji Shiba
doaj +1 more source
Advanced Energy & Sustainability Research, 2022 Herein, it is demonstrated how the carrier mobility and carrier lifetime of upgraded‐metallurgical grade silicon (UMG‐Si), a feedstock alternative to electronic‐grade, high‐purity polysilicon dominating photovoltaic technology, can be largely improved ...
Sergio Revuelta +4 more
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IEEE Journal of the Electron Devices Society, 2021 High Temperature Reverse Bias (HTRB) reliability failure is found to be caused by huge amount of undesirable hydrogen proton (H+) ions from packaging resin or external environment, while Temperature Humidity Bias (THB) reliability failure is known
Ai Loon Ooi, David Goh, Voon Cheng Ngwan
doaj +1 more source
Black silicon significantly enhances phosphorus diffusion gettering. [PDF]
Sci Rep, 2018 Art. 1991, 6 S.Black silicon (b-Si) is currently being adopted by several fields of technology, and its potential has already been demonstrated in various applications.
Pasanen TP +4 more
europepmc +2 more sources
, 1983 A variety of backside damage techniques are available for gettering heavy-metal contaminants in silicon wafers. These include mechanical damage, ion implantation, thin film deposition, and pulsed–laser surface melting.
Gilbert Hawkins, George Erikson
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Gettering of Metallic Impurities in Silicon
, 1984 We report the results of a study of the microstructural changes brought about by the gettering of metallic impurities in silicon. Phosphorus gettering proceeds by the formation of metal disilicides at the silicon/phosphosilicate glass interface.
A. Ourmazd, W. Schröter
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Advanced Materials, EarlyView.Ball‐milling Cu‐based metallic glasses with ceria creates a unique nanostructure where metallic glass particles are wrapped by CeO2 nanoparticles. The intimate integration triggers copper state reorganization during reaction and aging, boosting CO oxidation and COPrOx activity.
Maahin Mirzay‐Shahim +17 more
wiley +1 more source
Iron gettering in silicon using doped layers and bulk defects [PDF]
, 2011 The removal of iron impurities to desired regions in silicon wafers has been studied using phosphorus and boron doped layers and bulk defects as gettering sites.
Talvitie, Heli
core
Effects Of Gettering On Device Characteristics
, 1996 Effective methods of gettering metallic impurities were proposed. To achieve effective gettering, an annealing process to induce gettering was modified taking fundamental gettering steps and the difference in the gettering mechanism into account.
Tsuyoshi Nagata +3 more
core +1 more source