Results 31 to 40 of about 300 (179)

Coupled Structural Characteristics Boost Brazing Performance of Ti2AlNb Alloy

Rare Metals, Volume 45, Issue 8, August 2026.
ABSTRACT Brazing of Ti2AlNb alloy is a pivotal technique for new generation aero‐engine lightweight structures, yet developing novel filler metal and achieving the extraordinary performance of titanium alloy brazed joints remains challenging. Here, this study designed an innovative filler metal (Ti70‐xZrxCu15Ni15) and developed inspired coupled ...
Yinchen Wang, Zhijie Ding, Shiwei Li, Jilong Wang, Tianyu Li, Jinkai Wang, Jianshi Wu, Hexue Wang, Shuyan Shi, Honggang Dong, Xiong Ma, Weimin Long, Yutaka S. Sato, Peng Li   +13 more
wiley   +1 more source

Metallic Impurity Gettering Behavior of Hydrocarbon-Molecular-Ion-Implanted Epitaxial Silicon Wafer During the pn-Junction Diode Fabrication Process

IEEE Journal of the Electron Devices Society
We investigate the leakage current density–voltage (J–V) characteristics and gettering behavior of metallic impurities using a pn-junction diode fabricated with hydrocarbon (C3H5)-molecular-ion-implanted epitaxial silicon wafer.
Sho Nagatomo, Takeshi Kadono, Ryo Hirose, Koji Kobayashi, Shun Sasaki, Kazunari Kurita   +5 more
doaj   +1 more source

Copper Nanocrystallization in Anodic Oxide Films of Ti–Cu‐Based Bulk Metallic Glass and Its Effect on the Corrosion Resistance and Cytocompatibility

Advanced Engineering Materials, Volume 28, Issue 11, 3 June 2026.
Viktoriia Shtefan, Thorgund Nemec, Ute Hempel, Annett Gebert and coworkers demonstrate that anodic treatment of Ti–Cu‐based metallic glass in a nontoxic pyrophosphate electrolyte forms a protective bilayered Ti/Zr‐oxide film enriched with Cu nanocrystals.
Viktoriia Shtefan, Nora Fernández Navas, Thorgund Nemec, Ivan Kaban, Ute Hempel, Andrea Voss, Volker Hoffmann, Darius Pohl, Annett Gebert   +8 more
wiley   +1 more source

Effect of the Phosphorus Gettering on Si Heterojunction Solar Cells

International Journal of Photoenergy, 2012
To improve the efficiency of crystalline silicon solar cells, should be collected the excess carrier as much as possible. Therefore, minimizing the recombination both at the bulk and surface regions is important.
Hyomin Park, Sung Ju Tark, Chan Seok Kim, Sungeun Park, Young Do Kim, Chang-Sik Son, Jeong Chul Lee, Donghwan Kim   +7 more
doaj   +1 more source

Turning Intermediate‐Temperature Brittleness Into Strength‐Ductility Synergy in Refractory Complex Concentrated Alloys via Nanoscale Heterogeneity Engineering

Rare Metals, Volume 45, Issue 5, May 2026.
ABSTRACT Refractory complex‐concentrated alloys (RCCAs) show exceptional promise for extreme‐environment applications, yet intermediate‐temperature instability (0.4–0.6 Tm) and plasticity degradation severely constrain their development. This work provides an effective strategy to transform the inherent intermediate‐temperature instability into a ...
Jing‐Zhi He, Hong‐Yang Liu, Bo‐Hang Shen, Hui‐Hui Zhu, Wen‐Yu Yang, Shun Li, Yu Tang, Jia‐Yu Dai, Shu‐Xin Bai   +8 more
wiley   +1 more source

Study of the effect of local photon annealing on stress in silicon wafers [PDF]

Modern Electronic Materials, 2019
The effect of photon annealing on deformation in the crystal structure of boron doped Cz-Si wafers has been studied using triple crystal X-ray diffraction.
Vitaliy V. Starkov, Ekaterina A. Gosteva, Dmitry V. Irzhak, Dmitry V. Roshchupkin   +3 more
doaj   +3 more sources

Annealing‐Induced Plasticity and Strengthening in Metallic Glasses

Advanced Science, Volume 13, Issue 24, 27 April 2026.
This work challenges the dogma that annealing inevitably embrittles metallic glasses. We demonstrate that sub‐Tg annealing, guided by positive mixing enthalpy and constrained kinetics, can drive a self‐organized compositional fluctuation that creates an interface‐free heterogeneous structure.
Yingjie Zhang, Jinyue Wang, Leqing Liu, Yuan Wu, Yi‐huan Cao, Jiqi Yu, Zhen Tian, Zhichao Lu, Fengshou Li, Qiang Chen, Guosheng Zhang, Laiquan Shen, Yong Yu, Hui Wang, Suihe Jiang, Xiaobin Zhang, Xiongjun Liu, Zhaoping Lu   +17 more
wiley   +1 more source

Improvement of charge carrier lifetime in heat exchange method multicrystalline silicon wafers by extended phosphorous gettering process

Revue des Énergies Renouvelables, 2011
External phosphorous diffusion gettering were applied using homogenous and extended schemes on multicrystalline silicon (Mc-Si) wafers obtained from solar grade (SOG) silicon feedstock by the heat exchange method (HEM) growth technique.
D. Bouhafs, M. Boumaour, A. Moussi, S.E.H. Abaïdia, N. Khelifati, B. Palahouane   +5 more
doaj  

On composition, structure and gettering in polycrystalline Si passivating contacts for solar cells by atom probe tomography

Materials Today Advances
Doped polycrystalline Si (poly-Si) contacts with a nanoscale SiOx interlayer have attracted significant interest due to their excellent surface passivation and impurity gettering properties for high-efficiency crystalline Si photovoltaics. However, there
Apurv Yadav, Keita Nomoto, Andrew J. Breen, Di Yan, AnYao Liu, Wenjie Yang, Daniel Macdonald, Simon P. Ringer   +7 more
doaj   +1 more source

Getters in silicon [PDF]

Modern Electronic Materials, 2019
Gettering of rapidly diffusing metallic impurities and structural defects in silicon which is the main material for IC fabrication, high-power high-voltage devices and neutron doped silicon has been studied.
Vyacheslav A. Kharchenko
doaj   +3 more sources