Results 31 to 40 of about 6,652 (220)

A statistical model describing temperature dependent gettering of Cu in p-type Si [PDF]

open access: yes, 2015
A model is proposed describing quantitatively the temperature dependent gettering of Cu atoms in p-type Si wafers by taking into account the densities and the binding energies of all types of occupying sites, including the gettering ones.
Kamiyama, Eiji   +2 more
core   +2 more sources

Annealing‐Induced Plasticity and Strengthening in Metallic Glasses

open access: yesAdvanced Science, Volume 13, Issue 24, 27 April 2026.
This work challenges the dogma that annealing inevitably embrittles metallic glasses. We demonstrate that sub‐Tg annealing, guided by positive mixing enthalpy and constrained kinetics, can drive a self‐organized compositional fluctuation that creates an interface‐free heterogeneous structure.
Yingjie Zhang   +17 more
wiley   +1 more source

Enhanced Gettering of Multicrystalline Silicon Using Nanowires for Solar Cell Applications

open access: yesInorganics
In this work, we present a gettering technique for multicrystalline silicon (mc-Si) by combining a nanowire structure with thermal treatment under nitrogen in an infrared lamp furnace.
Achref Mannai   +3 more
doaj   +1 more source

Unveiling Solidification Mechanism and Balanced Strength–Ductility Synergy of Eutectic High‐Entropy Alloys

open access: yesRare Metals, Volume 45, Issue 4, April 2026.
ABSTRACT Eutectic high‐entropy alloys (EHEAs) have attracted significant attention due to their balanced mechanical properties and promising applications. Nonetheless, the correlation between the solidification mechanism of eutectic microstructures and their mechanical properties remains elusive.
Yi Qin   +15 more
wiley   +1 more source

Regularities of microdefect formation in silicon during heat treatment for internal getter synthesis [PDF]

open access: yesModern Electronic Materials, 2019
Gettering is defined as a process by which metal impurities in the device region are reduced by localizing them in predetermined, passive regions of the silicon wafer.
Vladimir T. Bublik   +4 more
doaj   +3 more sources

SiC as a core-edge integrated wall solution in DIII-D

open access: yesNuclear Materials and Energy, 2023
Silicon carbide (SiC) is a promising material for use in a fusion reactor due to its low hydrogenic diffusivity, high temperature strength and resilience under neutron irradiation [1,2].
S. Zamperini   +8 more
doaj   +1 more source

The Challenge of Icy Sample Return Begins With Artemis

open access: yesGeophysical Research Letters, Volume 53, Issue 4, 28 February 2026.
Abstract Throughout the Solar System, volatiles are found as solid ices. Returning ices to Earth for scientific analysis is critical to understanding the formation of a Solar System that bears life. This challenge begins with the Artemis missions to the lunar south polar region, where the coldest lunar regolith is enriched in H2O and other ices—systems
D. L. Gilbertson   +7 more
wiley   +1 more source

Auxiliary titanium sublimation pump produces ultrahigh /10 to the minus 11 torr/ vacuum [PDF]

open access: yes, 1966
Sublimated titanium as a gettering agent in conjunction with a turbine-type pump provides a two-step procedure for obtaining an ultrahigh vacuum of 10 to the minus 11 torr. The pump alone evacuates the chamber to a pressure of 10 to the minus 9 torr. The
Outlaw, R. A.
core   +1 more source

Improvement of the reverse characteristics of Schottky diodes using gettering

open access: yesTekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2019
The paper considers the causes and mechanisms of the influence of defects and impurities on the reverse current of the Schottky diode. The influence of two getter regions, which were created by different technologies on the working side and the reverse ...
V. Litvinenko, I. Vikulin, V. Gorbachev
doaj   +1 more source

Impact of a surface on the electro-reflectance spectra of n-Si(110) and their polarization anisotropy

open access: yesФізика і хімія твердого тіла, 2020
The electro-reflectance spectra, including their polarization dependencies were analyzed for n-Si(110) in the energy range of 2.9-3.8 eV. Based on the optical anisotropy of electro-optical effect, two contributions originated from a surface, (isotropic ...
P.O. Gentsar   +2 more
doaj   +1 more source

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