Results 31 to 40 of about 2,912 (170)

Enhanced Gettering of Multicrystalline Silicon Using Nanowires for Solar Cell Applications

Inorganics
In this work, we present a gettering technique for multicrystalline silicon (mc-Si) by combining a nanowire structure with thermal treatment under nitrogen in an infrared lamp furnace.
Achref Mannai, Karim Choubani, Wissem Dimassi, Mohamed Ben Rabha   +3 more
doaj   +1 more source

Chemically Gradient Ordered Nanodomains Enable Large Tensile Ductility in Gigapascal Lightweight Refractory High‐Entropy Alloys

Advanced Science, Volume 13, Issue 54, 28 September 2026.
A high‐strength lightweight refractory high‐entropy alloy achieves extraordinary ductility owing to the introduction of coherent chemically gradient ordered nanodomains (CGONs). The CGONs not only serve as effective barriers to dislocation motion (strengthening) but also significantly promote dislocation nucleation and multiplication (ductilizing) upon
Wei Zhang, Dingshun Yan, Yong Zhang, Zhiming Li   +3 more
wiley   +1 more source

Probing of Single‐Interface Dzyaloshinskii‐Moriya Interaction

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
Conventional measurements of the interfacial Dzyaloshinskii‐Moriya interaction (DMI) combine contributions from multiple interfaces, obscuring the intrinsic response of each interface. Here, we introduce a novel approach for directly probing single‐interface DMI by performing film growth and characterization entirely under vacuum. This approach reveals
Ji‐Sung Yu, Seong‐Hyub Lee, Minhwan Kim, Dae‐Yun Kim, Gunn‐Hee Han, Wooyoung Shim, Jiho Shin, Yohan Mok, Jaehun Cho, Duck‐Ho Kim, Sug‐Bong Choe   +10 more
wiley   +1 more source

The Hydrogenation of MNi3 Compounds (M = Si, Ge, Sn, Sb, Zr, V, Fe)

European Journal of Inorganic Chemistry, Volume 29, Issue 25, 1 September 2026.
Hexagonal Ni3Sn takes up hydrogen to form α‐Ni3SnHx (filled Ni3Sn type, ΔV = 0.9%), followed by a transition to the cubic β‐Ni3SnHy (filled AuCu3 type, ΔV = 1.1% with respect to pristine Ni3Sn), while MNi3 (M = Zr, Si, Sb) compounds show no reaction toward hydrogen and MNi3 (M = V, Fe, Ge) compounds only a minute hydrogen uptake.
André Götze, Mihai I. Sturza, Leonie Jurkschat, Önder F. Serhadli, Anastasiya Yu. Polevik, Alexey N. Kuznetsov, Holger Kohlmann   +6 more
wiley   +1 more source

Electrical Resistivity Change Upon Crystallization as a Robust Descriptor for Metallic Glass Forming Ability

Advanced Materials, Volume 38, Issue 48, 26 August 2026.
Electrical resistivity change upon annealing is introduced as a rapid descriptor for identifying high glass‐forming ability in metallic glasses. High‐throughput combinatorial thin‐film libraries reveal that compositions exhibiting small resistivity changes correspond to sluggish crystallization behavior and known bulk metallic glass regions, enabling ...
Haechan Jo, Hongxi Duan, Mingxing Li, Liwei Hu, Yanhui Liu, Dongwoo Lee   +5 more
wiley   +1 more source

Metallic Impurity Gettering Behavior of Hydrocarbon-Molecular-Ion-Implanted Epitaxial Silicon Wafer During the pn-Junction Diode Fabrication Process

IEEE Journal of the Electron Devices Society
We investigate the leakage current density–voltage (J–V) characteristics and gettering behavior of metallic impurities using a pn-junction diode fabricated with hydrocarbon (C3H5)-molecular-ion-implanted epitaxial silicon wafer.
Sho Nagatomo, Takeshi Kadono, Ryo Hirose, Koji Kobayashi, Shun Sasaki, Kazunari Kurita   +5 more
doaj   +1 more source

Improvement of the reverse characteristics of Schottky diodes using gettering

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2019
The paper considers the causes and mechanisms of the influence of defects and impurities on the reverse current of the Schottky diode. The influence of two getter regions, which were created by different technologies on the working side and the reverse ...
V. Litvinenko, I. Vikulin, V. Gorbachev
doaj   +1 more source

Impact of a surface on the electro-reflectance spectra of n-Si(110) and their polarization anisotropy

Фізика і хімія твердого тіла, 2020
The electro-reflectance spectra, including their polarization dependencies were analyzed for n-Si(110) in the energy range of 2.9-3.8 eV. Based on the optical anisotropy of electro-optical effect, two contributions originated from a surface, (isotropic ...
P.O. Gentsar, M.V. Vuichyk, A.V. Stronski   +2 more
doaj   +1 more source

Regularities of microdefect formation in silicon during heat treatment for internal getter synthesis [PDF]

Modern Electronic Materials, 2019
Gettering is defined as a process by which metal impurities in the device region are reduced by localizing them in predetermined, passive regions of the silicon wafer.
Vladimir T. Bublik, Marina I. Voronova, Kirill D. Shcherbachev, Mikhail V. Mezhennyi, Vladimir Ya. Reznik   +4 more
doaj   +3 more sources

SiC as a core-edge integrated wall solution in DIII-D

Nuclear Materials and Energy, 2023
Silicon carbide (SiC) is a promising material for use in a fusion reactor due to its low hydrogenic diffusivity, high temperature strength and resilience under neutron irradiation [1,2].
S. Zamperini, T. Abrams, J. Nichols, E. Unterberg, A. Lasa, P. Stangeby, S. Bringuier, D. Rudakov, J.D. Elder   +8 more
doaj   +1 more source