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Systematic Investigation of Gettering Effects on 4th Row Element Impurities in Si by Dopant Atoms
Advances in Materials Science and Engineering, 2009 The gettering of 4th row element impurities (K, Ca, 3d transition metals, and Zn) in Si crystals by dopant atoms was systematically investigated by first-principles calculation through evaluation of the diffusion barrier and the binding energy.
Koji Sueoka, Ken Kamimura, Seiji Shiba
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Advanced Energy & Sustainability Research, 2022 Herein, it is demonstrated how the carrier mobility and carrier lifetime of upgraded‐metallurgical grade silicon (UMG‐Si), a feedstock alternative to electronic‐grade, high‐purity polysilicon dominating photovoltaic technology, can be largely improved ...
Sergio Revuelta +4 more
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IEEE Journal of the Electron Devices Society, 2021 High Temperature Reverse Bias (HTRB) reliability failure is found to be caused by huge amount of undesirable hydrogen proton (H+) ions from packaging resin or external environment, while Temperature Humidity Bias (THB) reliability failure is known
Ai Loon Ooi, David Goh, Voon Cheng Ngwan
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Understanding the Mechanism of Electronic Defect Suppression Enabled by Nonidealities in Atomic Layer Deposition. [PDF]
, 2020 Silicon germanium (SiGe) is a multifunctional material considered for quantum computing, neuromorphic devices, and CMOS transistors. However, implementation of SiGe in nanoscale electronic devices necessitates suppression of surface states dominating the
Aoki, Toshihiro +9 more
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Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation
AIP Advances, 2018 The presence of copper (Cu) contamination is known to cause relevant light-induced degradation (Cu-LID) effects in p-type silicon. Due to its high diffusivity, Cu is generally regarded as a relatively benign impurity, which can be readily relocated ...
Alessandro Inglese +3 more
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, 1995 Some possible applications of the low-angle mid-IR-light scattering technique and some recently developed on its basis methods for non-destructive inspection and investigation of semiconductor materials and structures are discussed in the paper.
Astafiev +13 more
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Advanced Engineering Materials, EarlyView.Viktoriia Shtefan, Thorgund Nemec, Ute Hempel, Annett Gebert and coworkers demonstrate that anodic treatment of Ti–Cu‐based metallic glass in a nontoxic pyrophosphate electrolyte forms a protective bilayered Ti/Zr‐oxide film enriched with Cu nanocrystals.
Viktoriia Shtefan +8 more
wiley +1 more source
Titanium-nitrogen reaction investigated for application to gettering systems [PDF]
, 1968 Titanium is one of several gettering materials available for removing nitrogen from inert gases. The reaction rate of titanium-metal sponge and nitrogen in argon-nitrogen mixtures was studied at 900 degrees C.
Arntzen, J. D. +3 more
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Advanced Materials, EarlyView.Ball‐milling Cu‐based metallic glasses with ceria creates a unique nanostructure where metallic glass particles are wrapped by CeO2 nanoparticles. The intimate integration triggers copper state reorganization during reaction and aging, boosting CO oxidation and COPrOx activity.
Maahin Mirzay‐Shahim +17 more
wiley +1 more source
Impurity-to-efficiency simulator: Predictive simulation of solar cell efficiencies based on measured metal distribution and cell processing conditions [PDF]
, 2010 We present a fast and simple 1D simulation tool to predict solar cell performance as a function of the initial iron content and distribution in the as-grown silicon wafer, the time-temperature profiles applied during the fabrication process, and several ...
Bertoni, Mariana I. +5 more
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