Results 21 to 30 of about 2,912 (170)

Methods and mechanisms of gettering of silicon structures in the production of integrated circuits [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2013
Increasing the degree of integration of hardware components imposes more stringent requirements for the reduction of the concentration of contaminants and oxidation stacking faults in the original silicon wafers with its preservation in the IC ...
Pilipenko V. A., Gorushko V. A., Petlitskiy A. N., Ponaryadov V. V., Turtsevich A. S., Shvedov S. V.   +5 more
doaj   +2 more sources

Systematic Investigation of Gettering Effects on 4th Row Element Impurities in Si by Dopant Atoms

Advances in Materials Science and Engineering, 2009
The gettering of 4th row element impurities (K, Ca, 3d transition metals, and Zn) in Si crystals by dopant atoms was systematically investigated by first-principles calculation through evaluation of the diffusion barrier and the binding energy.
Koji Sueoka, Ken Kamimura, Seiji Shiba
doaj   +1 more source

Minority carrier lifetime in silicon photovoltaics : the effect of oxygen precipitation [PDF]

, 2014
Single-crystal Czochralski silicon used for photovoltaics is typically supersaturated with interstitial oxygen at temperatures just below the melting point.
McGuire, R. E., Falster, RJ, Falster, Robert J., Murphy, J. D.; id_orcid, Bothe, K, Falster, R.J., Murphy, John D., J.D. Murphy, Bothe, K., K. Bothe, McGuire, RE, R.J. Falster, Bothe, Karsten, McGuire, R.E., R.E. McGuire, Murphy, JD, Murphy, John, Murphy, J.D., Voronkov, V. V., Voronkov, VV, Falster, R. J., Voronkov, V.V., V.V. Voronkov   +22 more
core   +1 more source

Boosting Charge Carrier Mobilities in Upgraded Metallurgical Grade Silicon by Phosphorous Diffusion Gettering

Advanced Energy & Sustainability Research, 2022
Herein, it is demonstrated how the carrier mobility and carrier lifetime of upgraded‐metallurgical grade silicon (UMG‐Si), a feedstock alternative to electronic‐grade, high‐purity polysilicon dominating photovoltaic technology, can be largely improved ...
Sergio Revuelta, Nerea Dasilva-Villanueva, David Fuertes Marrón, Carlos del Cañizo, Enrique Cánovas   +4 more
doaj   +1 more source

High Temperature Reverse Bias (HTRB) & Temperature Humidity Bias (THB) Reliability Failure Mechanisms and Improvements in Trench Power MOSFET and IGBT

IEEE Journal of the Electron Devices Society, 2021
High Temperature Reverse Bias (HTRB) reliability failure is found to be caused by huge amount of undesirable hydrogen proton (H+) ions from packaging resin or external environment, while Temperature Humidity Bias (THB) reliability failure is known
Ai Loon Ooi, David Goh, Voon Cheng Ngwan
doaj   +1 more source

Combining low-temperature gettering with phosphorus diffusion gettering for improved multicrystalline silicon [PDF]

, 2017
We have investigated low-temperature (≤500 °C) gettering in combination with phosphorus diffusion gettering with a view to improving poor quality multicrystalline silicon. Low-temperature gettering applied after standard phosphorus diffusion gettering is
Al-Amin, Mohammad, Murphy, John D.; id_orcid, Mohammad Al-Amin, John D. Murphy, Murphy, John D.   +4 more
core   +1 more source

Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation

AIP Advances, 2018
The presence of copper (Cu) contamination is known to cause relevant light-induced degradation (Cu-LID) effects in p-type silicon. Due to its high diffusivity, Cu is generally regarded as a relatively benign impurity, which can be readily relocated ...
Alessandro Inglese, Hannu S. Laine, Ville Vähänissi, Hele Savin   +3 more
doaj   +1 more source

HCl gas gettering of low-cost silicon

, 2022
S.767-770HCl gas gettering is a cheap and simple technique to reduce transition metal concentrations in silicon. It is attractive especially for low-cost silicon materials like upgraded metallurgical grade (UMG) silicon, which usually contain 3d ...
Reber, Stefan, Hampel, J., Ehrenreich, P., Wiehl, N., Kratz, J.V.   +4 more
core   +1 more source

Tuning Amorphous‐Crystalline Catalytic Interfaces by Mechanochemistry: Cu‐Based Metallic Glasses Coupled with Ceria for CO Oxidation

Advanced Materials, Volume 38, Issue 51, 11 September 2026.
Ball‐milling Cu‐based metallic glasses with ceria creates a unique nanostructure where metallic glass particles are wrapped by CeO2 nanoparticles. The intimate integration triggers copper state reorganization during reaction and aging, boosting CO oxidation and COPrOx activity.
Maahin Mirzay‐Shahim, Mehran Nabahat, Laia Pascua‐Solé, Isabel Serrano, Ilaria Lucentini, Xènia Garcia, Marina Armengol‐Profitós, Asier Agrelo‐Lestón, Ignasi Burgués‐Ceballos, Núria J. Divins, Ignacio J. Villar‐Garcia, Virginia Pérez‐Dieste, Carlos Escudero, Carlo Marini, Jordi Llorca, Eloi Pineda, Pere Bruna, Lluís Soler   +17 more
wiley   +1 more source

Iron gettering in silicon using doped layers and bulk defects [PDF]

, 2011
The removal of iron impurities to desired regions in silicon wafers has been studied using phosphorus and boron doped layers and bulk defects as gettering sites.
Talvitie, Heli
core   +1 more source