Profound purification of tellurium, zinc and cadmium for electronic applications [PDF]
Modern Electronic Materials, 2022 A combined method of profound purification of Cd, Zn and Te developed by the Authors and allowing one to produce high-purity materials in a vertical reactor unit has been considered.
Vladimir N. Abryutin +4 more
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Effect of Oxygen in Low Temperature Boron and Phosphorus Diffusion Gettering of Iron in Czochralski-Grown Silicon [PDF]
, 2009 Low temperature boron and phosphorous diffusion gettering (BDG and PDG) of iron in Czochralski-grown silicon were experimentally studied. Differences and similarities between the gettering techniques were clarified by using intentionally iron ...
Vähänissi, Ville +7 more
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IEEE Journal of the Electron Devices Society, 2018 Gettering sinks for metallic impurities formed by carbon-cluster ion implantation in epitaxial silicon wafers have been investigated using technology computer-aided design and atom probe tomography (APT).
Ayumi Onaka-Masada +8 more
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Improvement of inverse characteristics of silicon varicap by using low-temperature gettering
Технологія та конструювання в електронній апаратурі, 2023 Varicaps are widely used in radio electronics as a variable capacitance, the value of which is controlled by voltage. However, it should be noted that the cost of varicaps remains relatively high due to a low yield of suitable devices.
Victor Litvinenko, Stanislav Shutov
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Combining low-temperature gettering with phosphorus diffusion gettering for improved multicrystalline silicon [PDF]
, 2017 We have investigated low-temperature (≤500 °C) gettering in combination with phosphorus diffusion gettering with a view to improving poor quality multicrystalline silicon. Low-temperature gettering applied after standard phosphorus diffusion gettering is
Al-Amin, Mohammad +4 more
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Improving parameters of planar pulse diode using gettering
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2021 Pulse diodes are widely used as part of high-frequency pulse circuits. However, it should be noted that the cost of pulsed diodes remains relatively high, due to the low yield of suitable devices when they are sorted according to the criteria of reverse ...
Viktor Litvinenko +3 more
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Physicochemical fundamentals of phase formation in silicon layers implanted with oxygen and carbon [PDF]
Modern Electronic Materials, 2019 The thermodynamic and kinetic regularities of processes occurring during heat treatment in silicon layers implanted with oxygen and carbon ions have been considered.
Andrey N. Aleshin, Kira L. Enisherlova
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Minority carrier lifetime in silicon photovoltaics : the effect of oxygen precipitation [PDF]
, 2014 Single-crystal Czochralski silicon used for photovoltaics is typically supersaturated with interstitial oxygen at temperatures just below the melting point.
McGuire, R. E. +22 more
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HCl gas gettering of low-cost silicon
, 2022 S.767-770HCl gas gettering is a cheap and simple technique to reduce transition metal concentrations in silicon. It is attractive especially for low-cost silicon materials like upgraded metallurgical grade (UMG) silicon, which usually contain 3d ...
Reber, Stefan +4 more
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Effects of Phosphorus Diffusion on Gettering of Metal Impurities in UMG Silicon Wafers
International Journal of Photoenergy, 2013 Fe distributions were simulated by using impurity-to-efficiency simulator for the analysis of phosphorus diffusion gettering and confirmed the dependencies of the electron lifetime on the various gettering conditions.
Sung Yean Yoon, Jeong Kim, Kyoon Choi
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