Results 1 to 10 of about 2,452 (221)

Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation

AIP Advances, 2018
The presence of copper (Cu) contamination is known to cause relevant light-induced degradation (Cu-LID) effects in p-type silicon. Due to its high diffusivity, Cu is generally regarded as a relatively benign impurity, which can be readily relocated ...
Alessandro Inglese, Hannu S. Laine, Ville Vähänissi, Hele Savin   +3 more
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Enhanced Gettering of Multicrystalline Silicon Using Nanowires for Solar Cell Applications

Inorganics
In this work, we present a gettering technique for multicrystalline silicon (mc-Si) by combining a nanowire structure with thermal treatment under nitrogen in an infrared lamp furnace.
Achref Mannai, Karim Choubani, Wissem Dimassi, Mohamed Ben Rabha   +3 more
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Metallic Impurity Gettering Behavior of Hydrocarbon-Molecular-Ion-Implanted Epitaxial Silicon Wafer During the pn-Junction Diode Fabrication Process

IEEE Journal of the Electron Devices Society
We investigate the leakage current density–voltage (J–V) characteristics and gettering behavior of metallic impurities using a pn-junction diode fabricated with hydrocarbon (C3H5)-molecular-ion-implanted epitaxial silicon wafer.
Sho Nagatomo, Takeshi Kadono, Ryo Hirose, Koji Kobayashi, Shun Sasaki, Kazunari Kurita   +5 more
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Improvement of the reverse characteristics of Schottky diodes using gettering

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2019
The paper considers the causes and mechanisms of the influence of defects and impurities on the reverse current of the Schottky diode. The influence of two getter regions, which were created by different technologies on the working side and the reverse ...
V. Litvinenko, I. Vikulin, V. Gorbachev
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Impact of a surface on the electro-reflectance spectra of n-Si(110) and their polarization anisotropy

Фізика і хімія твердого тіла, 2020
The electro-reflectance spectra, including their polarization dependencies were analyzed for n-Si(110) in the energy range of 2.9-3.8 eV. Based on the optical anisotropy of electro-optical effect, two contributions originated from a surface, (isotropic ...
P.O. Gentsar, M.V. Vuichyk, A.V. Stronski   +2 more
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Regularities of microdefect formation in silicon during heat treatment for internal getter synthesis [PDF]

Modern Electronic Materials, 2019
Gettering is defined as a process by which metal impurities in the device region are reduced by localizing them in predetermined, passive regions of the silicon wafer.
Vladimir T. Bublik, Marina I. Voronova, Kirill D. Shcherbachev, Mikhail V. Mezhennyi, Vladimir Ya. Reznik   +4 more
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SiC as a core-edge integrated wall solution in DIII-D

Nuclear Materials and Energy, 2023
Silicon carbide (SiC) is a promising material for use in a fusion reactor due to its low hydrogenic diffusivity, high temperature strength and resilience under neutron irradiation [1,2].
S. Zamperini, T. Abrams, J. Nichols, E. Unterberg, A. Lasa, P. Stangeby, S. Bringuier, D. Rudakov, J.D. Elder   +8 more
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Effect of the Phosphorus Gettering on Si Heterojunction Solar Cells

International Journal of Photoenergy, 2012
To improve the efficiency of crystalline silicon solar cells, should be collected the excess carrier as much as possible. Therefore, minimizing the recombination both at the bulk and surface regions is important.
Hyomin Park, Sung Ju Tark, Chan Seok Kim, Sungeun Park, Young Do Kim, Chang-Sik Son, Jeong Chul Lee, Donghwan Kim   +7 more
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Study of the effect of local photon annealing on stress in silicon wafers [PDF]

Modern Electronic Materials, 2019
The effect of photon annealing on deformation in the crystal structure of boron doped Cz-Si wafers has been studied using triple crystal X-ray diffraction.
Vitaliy V. Starkov, Ekaterina A. Gosteva, Dmitry V. Irzhak, Dmitry V. Roshchupkin   +3 more
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Improvement of charge carrier lifetime in heat exchange method multicrystalline silicon wafers by extended phosphorous gettering process

Revue des Énergies Renouvelables, 2011
External phosphorous diffusion gettering were applied using homogenous and extended schemes on multicrystalline silicon (Mc-Si) wafers obtained from solar grade (SOG) silicon feedstock by the heat exchange method (HEM) growth technique.
D. Bouhafs, M. Boumaour, A. Moussi, S.E.H. Abaïdia, N. Khelifati, B. Palahouane   +5 more
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