Results 1 to 10 of about 300 (179)

Evaluation of Hydrogen Gettering Rates Correlated to Surface Composition and Texture of Nickel-Plated Zircaloy Getters of Different Heat Treatment Procedures [PDF]

open access: yesMolecules, 2023
Coatings of metal specimens are known to have an impact on hydrogen gettering (hydrogen absorption). The coating can have one or more functions, such as enhancing gettering, preventing gettering and/or preventing oxidation of the metal substrate.
Ewa C. E. Rönnebro   +5 more
doaj   +2 more sources

Reduction of White Spot Defects in CMOS Image Sensors Fabricated Using Epitaxial Silicon Wafer with Proximity Gettering Sinks by CH2P Molecular Ion Implantation [PDF]

open access: yesSensors, 2022
Using a new implantation technique with multielement molecular ions consisting of carbon, hydrogen, and phosphorus, namely, CH2P molecular ions, we developed an epitaxial silicon wafer with proximity gettering sinks under the epitaxial silicon layer to ...
Takeshi Kadono   +8 more
doaj   +2 more sources

Reduction of Dark Current in CMOS Image Sensor Pixels Using Hydrocarbon-Molecular-Ion-Implanted Double Epitaxial Si Wafers [PDF]

open access: yesSensors, 2020
The impact of hydrocarbon-molecular (C3H6)-ion implantation in an epitaxial layer, which has low oxygen concentration, on the dark characteristics of complementary metal-oxide-semiconductor (CMOS) image sensor pixels was investigated by dark current ...
Ayumi Onaka-Masada   +7 more
doaj   +2 more sources

Reduction in Dark Current in Photodiodes: A Review [PDF]

open access: yesMicromachines
Dark current represents a fundamental limiting factor in photodiode performance, establishing the noise floor and constraining detectivity in low-light applications.
Alper Ülkü   +7 more
doaj   +2 more sources

Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors [PDF]

open access: yesSensors, 2019
We developed silicon epitaxial wafers with high gettering capability by using hydrocarbon−molecular−ion implantation. These wafers also have the effect of hydrogen passivation on process-induced defects and a barrier to out-diffusion of ...
Kazunari Kurita   +7 more
doaj   +2 more sources

Development and Characterization of Non-Evaporable Getter Thin Films with Ru Seeding Layer for MEMS Applications [PDF]

open access: yesMicromachines, 2018
Mastering non-evaporable getter (NEG) thin films by elucidating their activation mechanisms and predicting their sorption performances will contribute to facilitating their integration into micro-electro-mechanical systems (MEMS). For this aim, thin film
El-Mostafa Bourim   +2 more
doaj   +2 more sources

Silicon Wafer Gettering Design for Advanced CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation: A Review

open access: yesIEEE Journal of the Electron Devices Society, 2022
We have developed silicon epitaxial wafers with high gettering capability using hydrocarbon molecular ion implantation for advanced Complementary Metal-Oxide-Semiconductor (CMOS) image sensors. These wafers have three unique silicon wafer characteristics
Kazunari Kurita   +9 more
doaj   +1 more source

Influence of gettering on aluminum ohmic contact formation [PDF]

open access: yesTekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2020
The study considers the reasons and mechanisms of degradation of reverse characteristics of varicaps with aluminum-based ohmic contacts. The authors present and analyze the experimental results on how gettering affects the reverse current of varicaps, as
Litvinenko V. N.   +3 more
doaj   +1 more source

Profound purification of tellurium, zinc and cadmium for electronic applications [PDF]

open access: yesModern Electronic Materials, 2022
A combined method of profound purification of Cd, Zn and Te developed by the Authors and allowing one to produce high-purity materials in a vertical reactor unit has been considered.
Vladimir N. Abryutin   +4 more
doaj   +3 more sources

Gettering Sinks for Metallic Impurities Formed by Carbon-Cluster Ion Implantation in Epitaxial Silicon Wafers for CMOS Image Sensor

open access: yesIEEE Journal of the Electron Devices Society, 2018
Gettering sinks for metallic impurities formed by carbon-cluster ion implantation in epitaxial silicon wafers have been investigated using technology computer-aided design and atom probe tomography (APT).
Ayumi Onaka-Masada   +8 more
doaj   +1 more source

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