Results 1 to 10 of about 6,652 (220)

Evaluation of Hydrogen Gettering Rates Correlated to Surface Composition and Texture of Nickel-Plated Zircaloy Getters of Different Heat Treatment Procedures [PDF]

open access: yesMolecules, 2023
Coatings of metal specimens are known to have an impact on hydrogen gettering (hydrogen absorption). The coating can have one or more functions, such as enhancing gettering, preventing gettering and/or preventing oxidation of the metal substrate.
Ewa C. E. Rönnebro   +5 more
doaj   +2 more sources

Reduction of White Spot Defects in CMOS Image Sensors Fabricated Using Epitaxial Silicon Wafer with Proximity Gettering Sinks by CH2P Molecular Ion Implantation [PDF]

open access: yesSensors, 2022
Using a new implantation technique with multielement molecular ions consisting of carbon, hydrogen, and phosphorus, namely, CH2P molecular ions, we developed an epitaxial silicon wafer with proximity gettering sinks under the epitaxial silicon layer to ...
Takeshi Kadono   +8 more
doaj   +2 more sources

Getters in silicon [PDF]

open access: yesModern Electronic Materials, 2019
Gettering of rapidly diffusing metallic impurities and structural defects in silicon which is the main material for IC fabrication, high-power high-voltage devices and neutron doped silicon has been studied. Structural defect based getters and gas phase getters based on chlorine containing compounds have been analyzed.
Vyacheslav A. Kharchenko
openaire   +4 more sources

Gettering of Iron in Silicon Solar Cells With Implanted Emitters [PDF]

open access: yesIEEE Journal of Photovoltaics, 2014
We present here experimental results on the gettering of iron in Czochralski-grown silicon by phosphorus implantation. The gettering efficiency and the gettering mechanisms in a high resistivity implanted emitter are determined as a function of both ...
Haarahiltunen, Antti   +3 more
core   +3 more sources

Silicon Wafer Gettering Design for Advanced CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation: A Review

open access: yesIEEE Journal of the Electron Devices Society, 2022
We have developed silicon epitaxial wafers with high gettering capability using hydrocarbon molecular ion implantation for advanced Complementary Metal-Oxide-Semiconductor (CMOS) image sensors. These wafers have three unique silicon wafer characteristics
Kazunari Kurita   +9 more
doaj   +1 more source

Influence of gettering on aluminum ohmic contact formation [PDF]

open access: yesTekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2020
The study considers the reasons and mechanisms of degradation of reverse characteristics of varicaps with aluminum-based ohmic contacts. The authors present and analyze the experimental results on how gettering affects the reverse current of varicaps, as
Litvinenko V. N.   +3 more
doaj   +1 more source

Profound purification of tellurium, zinc and cadmium for electronic applications [PDF]

open access: yesModern Electronic Materials, 2022
A combined method of profound purification of Cd, Zn and Te developed by the Authors and allowing one to produce high-purity materials in a vertical reactor unit has been considered.
Vladimir N. Abryutin   +4 more
doaj   +3 more sources

Silicon materials task of the low cost solar array project. Phase 3: Effect of impurities and processing on silicon solar cells [PDF]

open access: yes, 1979
The 13th quarterly report of a study entitled an Investigation of the Effects of Impurities and Processing on Silicon Solar Cells is given. The objective of the program is to define the effects of impurities, various thermochemical processes and any ...
Blais, P. D.   +7 more
core   +2 more sources

Gettering Sinks for Metallic Impurities Formed by Carbon-Cluster Ion Implantation in Epitaxial Silicon Wafers for CMOS Image Sensor

open access: yesIEEE Journal of the Electron Devices Society, 2018
Gettering sinks for metallic impurities formed by carbon-cluster ion implantation in epitaxial silicon wafers have been investigated using technology computer-aided design and atom probe tomography (APT).
Ayumi Onaka-Masada   +8 more
doaj   +1 more source

Improvement of inverse characteristics of silicon varicap by using low-temperature gettering

open access: yesТехнологія та конструювання в електронній апаратурі, 2023
Varicaps are widely used in radio electronics as a variable capacitance, the value of which is controlled by voltage. However, it should be noted that the cost of varicaps remains relatively high due to a low yield of suitable devices.
Victor Litvinenko, Stanislav Shutov
doaj   +1 more source

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