Results 11 to 20 of about 2,912 (170)
Gettering of Iron in Silicon Solar Cells With Implanted Emitters [PDF]
IEEE Journal of Photovoltaics, 2014 We present here experimental results on the gettering of iron in Czochralski-grown silicon by phosphorus implantation. The gettering efficiency and the gettering mechanisms in a high resistivity implanted emitter are determined as a function of both ...
Vähänissi, Ville +3 more
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Mechanisms of transition-metal gettering in silicon [PDF]
Journal of Applied Physics, 2000 The atomic process, kinetics, and equilibrium thermodynamics underlying the gettering of transition-metal impurities in Si are reviewed from a mechanistic perspective. Methods for mathematical modeling of gettering are reviewed and illustrated. Needs for
Myers, Samuel M., Jr. +6 more
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Impurity Gettering by Silicon Nitride Films: Kinetics Mechanisms, and Simulation
ACS Applied Energy Materials, 2021 Metallic impurities in the silicon wafer bulk are one of the major efficiency-limiting factors in silicon solar cells. Gettering can be used to significantly lower the metal concentrations. Although gettering by silicon nitride films has been reported in
Tien T. Le +11 more
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IEEE Journal of the Electron Devices Society, 2018 Gettering sinks for metallic impurities formed by carbon-cluster ion implantation in epitaxial silicon wafers have been investigated using technology computer-aided design and atom probe tomography (APT).
Ayumi Onaka-Masada +8 more
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Improvement of inverse characteristics of silicon varicap by using low-temperature gettering
Технологія та конструювання в електронній апаратурі, 2023 Varicaps are widely used in radio electronics as a variable capacitance, the value of which is controlled by voltage. However, it should be noted that the cost of varicaps remains relatively high due to a low yield of suitable devices.
Victor Litvinenko, Stanislav Shutov
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Improving parameters of planar pulse diode using gettering
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2021 Pulse diodes are widely used as part of high-frequency pulse circuits. However, it should be noted that the cost of pulsed diodes remains relatively high, due to the low yield of suitable devices when they are sorted according to the criteria of reverse ...
Viktor Litvinenko +3 more
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Enhancing parameters of silicon varactors using laser gettering
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2018 The authors investigate how and why defects influence the inverse characteristics of varactors. The paper presents experimental results on the effect laser gettering has on the electrical parameters of varactors.
I. M. Vikulin +5 more
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Physicochemical fundamentals of phase formation in silicon layers implanted with oxygen and carbon [PDF]
Modern Electronic Materials, 2019 The thermodynamic and kinetic regularities of processes occurring during heat treatment in silicon layers implanted with oxygen and carbon ions have been considered.
Andrey N. Aleshin, Kira L. Enisherlova
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Effects of Phosphorus Diffusion on Gettering of Metal Impurities in UMG Silicon Wafers
International Journal of Photoenergy, 2013 Fe distributions were simulated by using impurity-to-efficiency simulator for the analysis of phosphorus diffusion gettering and confirmed the dependencies of the electron lifetime on the various gettering conditions.
Sung Yean Yoon, Jeong Kim, Kyoon Choi
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Effect of Oxygen in Low Temperature Boron and Phosphorus Diffusion Gettering of Iron in Czochralski-Grown Silicon [PDF]
, 2009 Low temperature boron and phosphorous diffusion gettering (BDG and PDG) of iron in Czochralski-grown silicon were experimentally studied. Differences and similarities between the gettering techniques were clarified by using intentionally iron ...
Vähänissi, Ville +7 more
core +1 more source