Results 11 to 20 of about 300 (179)
Improvement of inverse characteristics of silicon varicap by using low-temperature gettering
Технологія та конструювання в електронній апаратурі, 2023 Varicaps are widely used in radio electronics as a variable capacitance, the value of which is controlled by voltage. However, it should be noted that the cost of varicaps remains relatively high due to a low yield of suitable devices.
Victor Litvinenko, Stanislav Shutov
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Improving parameters of planar pulse diode using gettering
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2021 Pulse diodes are widely used as part of high-frequency pulse circuits. However, it should be noted that the cost of pulsed diodes remains relatively high, due to the low yield of suitable devices when they are sorted according to the criteria of reverse ...
Viktor Litvinenko +3 more
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Enhancing parameters of silicon varactors using laser gettering
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2018 The authors investigate how and why defects influence the inverse characteristics of varactors. The paper presents experimental results on the effect laser gettering has on the electrical parameters of varactors.
I. M. Vikulin +5 more
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Physicochemical fundamentals of phase formation in silicon layers implanted with oxygen and carbon [PDF]
Modern Electronic Materials, 2019 The thermodynamic and kinetic regularities of processes occurring during heat treatment in silicon layers implanted with oxygen and carbon ions have been considered.
Andrey N. Aleshin, Kira L. Enisherlova
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Effects of Phosphorus Diffusion on Gettering of Metal Impurities in UMG Silicon Wafers
International Journal of Photoenergy, 2013 Fe distributions were simulated by using impurity-to-efficiency simulator for the analysis of phosphorus diffusion gettering and confirmed the dependencies of the electron lifetime on the various gettering conditions.
Sung Yean Yoon, Jeong Kim, Kyoon Choi
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Methods and mechanisms of gettering of silicon structures in the production of integrated circuits [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2013 Increasing the degree of integration of hardware components imposes more stringent requirements for the reduction of the concentration of contaminants and oxidation stacking faults in the original silicon wafers with its preservation in the IC ...
Pilipenko V. A. +5 more
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Systematic Investigation of Gettering Effects on 4th Row Element Impurities in Si by Dopant Atoms
Advances in Materials Science and Engineering, 2009 The gettering of 4th row element impurities (K, Ca, 3d transition metals, and Zn) in Si crystals by dopant atoms was systematically investigated by first-principles calculation through evaluation of the diffusion barrier and the binding energy.
Koji Sueoka, Ken Kamimura, Seiji Shiba
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Advanced Energy & Sustainability Research, 2022 Herein, it is demonstrated how the carrier mobility and carrier lifetime of upgraded‐metallurgical grade silicon (UMG‐Si), a feedstock alternative to electronic‐grade, high‐purity polysilicon dominating photovoltaic technology, can be largely improved ...
Sergio Revuelta +4 more
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IEEE Journal of the Electron Devices Society, 2021 High Temperature Reverse Bias (HTRB) reliability failure is found to be caused by huge amount of undesirable hydrogen proton (H+) ions from packaging resin or external environment, while Temperature Humidity Bias (THB) reliability failure is known
Ai Loon Ooi, David Goh, Voon Cheng Ngwan
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Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation
AIP Advances, 2018 The presence of copper (Cu) contamination is known to cause relevant light-induced degradation (Cu-LID) effects in p-type silicon. Due to its high diffusivity, Cu is generally regarded as a relatively benign impurity, which can be readily relocated ...
Alessandro Inglese +3 more
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