Reduction of Dark Current in CMOS Image Sensor Pixels Using Hydrocarbon-Molecular-Ion-Implanted Double Epitaxial Si Wafers [PDF]
Sensors, 2020 The impact of hydrocarbon-molecular (C3H6)-ion implantation in an epitaxial layer, which has low oxygen concentration, on the dark characteristics of complementary metal-oxide-semiconductor (CMOS) image sensor pixels was investigated by dark current ...
Ayumi Onaka-Masada +7 more
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Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors [PDF]
Sensors, 2019 We developed silicon epitaxial wafers with high gettering capability by using hydrocarbon−molecular−ion implantation. These wafers also have the effect of hydrogen passivation on process-induced defects and a barrier to out-diffusion of ...
Kazunari Kurita +7 more
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Development and Characterization of Non-Evaporable Getter Thin Films with Ru Seeding Layer for MEMS Applications [PDF]
Micromachines, 2018 Mastering non-evaporable getter (NEG) thin films by elucidating their activation mechanisms and predicting their sorption performances will contribute to facilitating their integration into micro-electro-mechanical systems (MEMS). For this aim, thin film
El-Mostafa Bourim +2 more
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Direct observation of irradiation-induced nanocavity shrinkage in Si [PDF]
, 2015 Nanocavities in Si substrates, formed by conventional H implantation and thermal annealing, are shown to evolve in size during subsequent Si irradiation.
Bernas, H. +6 more
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Enhancing parameters of silicon varactors using laser gettering
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2018 The authors investigate how and why defects influence the inverse characteristics of varactors. The paper presents experimental results on the effect laser gettering has on the electrical parameters of varactors.
I. M. Vikulin +5 more
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Improving parameters of planar pulse diode using gettering
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2021 Pulse diodes are widely used as part of high-frequency pulse circuits. However, it should be noted that the cost of pulsed diodes remains relatively high, due to the low yield of suitable devices when they are sorted according to the criteria of reverse ...
Viktor Litvinenko +3 more
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Physicochemical fundamentals of phase formation in silicon layers implanted with oxygen and carbon [PDF]
Modern Electronic Materials, 2019 The thermodynamic and kinetic regularities of processes occurring during heat treatment in silicon layers implanted with oxygen and carbon ions have been considered.
Andrey N. Aleshin, Kira L. Enisherlova
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Effects of Phosphorus Diffusion on Gettering of Metal Impurities in UMG Silicon Wafers
International Journal of Photoenergy, 2013 Fe distributions were simulated by using impurity-to-efficiency simulator for the analysis of phosphorus diffusion gettering and confirmed the dependencies of the electron lifetime on the various gettering conditions.
Sung Yean Yoon, Jeong Kim, Kyoon Choi
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Methods and mechanisms of gettering of silicon structures in the production of integrated circuits [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2013 Increasing the degree of integration of hardware components imposes more stringent requirements for the reduction of the concentration of contaminants and oxidation stacking faults in the original silicon wafers with its preservation in the IC ...
Pilipenko V. A. +5 more
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Study of internal versus external gettering of iron during slow cooling processes for silicon solar cell fabrication [PDF]
, 2010 The e ect of slow cooling after di erent high temperature treatments on the in- terstitial iron concentration and on the electron lifetime of p-type mc-Si wafers has been in- vestigated.
Cañizo Nadal, Carlos del +3 more
core +2 more sources